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Transistor - Bipolar (BJT) - Susunan, Pra-Bias

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  • Transistor - Bipolar (BJT) - Susunan, Pra-Bias
NSBA143ZDP6T5G
ON Semiconductor

NSBA143ZDP6T5G

bahagian bahagian: 126178

Jenis Transistor: 2 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSBC114YPDXV6T1
ON Semiconductor

NSBC114YPDXV6T1

bahagian bahagian: 1451

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSBC114TPDXV6T1
ON Semiconductor

NSBC114TPDXV6T1

bahagian bahagian: 1441

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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NSBC114EDXV6T1
ON Semiconductor

NSBC114EDXV6T1

bahagian bahagian: 1483

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

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NSBC123EDXV6T1G
ON Semiconductor

NSBC123EDXV6T1G

bahagian bahagian: 51685

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 2.2 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V,

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NSBA123JDXV6T1G
ON Semiconductor

NSBA123JDXV6T1G

bahagian bahagian: 3224

Jenis Transistor: 2 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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EMF5XV6T5
ON Semiconductor

EMF5XV6T5

bahagian bahagian: 5392

Jenis Transistor: 1 NPN Pre-Biased, 1 PNP, Semasa - Pemungut (Ic) (Maks): 100mA, 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, 12V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 270 @ 10mA, 2V,

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NSBC123JPDXV6T1G
ON Semiconductor

NSBC123JPDXV6T1G

bahagian bahagian: 150122

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSBC124EDXV6T5G
ON Semiconductor

NSBC124EDXV6T5G

bahagian bahagian: 158612

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

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NSVB143TPDXV6T1G
ON Semiconductor

NSVB143TPDXV6T1G

bahagian bahagian: 118474

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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NSBC115EPDXV6T1G
ON Semiconductor

NSBC115EPDXV6T1G

bahagian bahagian: 423

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 100 kOhms, Perintang - Pangkalan Pemancar (R2): 100 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSBA114YDXV6T1
ON Semiconductor

NSBA114YDXV6T1

bahagian bahagian: 1458

Jenis Transistor: 2 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSBA144WDXV6T1G
ON Semiconductor

NSBA144WDXV6T1G

bahagian bahagian: 112545

Jenis Transistor: 2 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSBC114TDXV6T5G
ON Semiconductor

NSBC114TDXV6T5G

bahagian bahagian: 140654

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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UMA6NT1
ON Semiconductor

UMA6NT1

bahagian bahagian: 1476

Jenis Transistor: 2 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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SMUN5114DW1T1G
ON Semiconductor

SMUN5114DW1T1G

bahagian bahagian: 172445

Jenis Transistor: 2 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSBC124XPDXV6T5G
ON Semiconductor

NSBC124XPDXV6T5G

bahagian bahagian: 1491

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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EMD5DXV6T1G
ON Semiconductor

EMD5DXV6T1G

bahagian bahagian: 3186

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, 47 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 20 @ 5mA, 10V,

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NSBC143EPDXV6T1
ON Semiconductor

NSBC143EPDXV6T1

bahagian bahagian: 1462

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V,

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MUN5334DW1T1G
ON Semiconductor

MUN5334DW1T1G

bahagian bahagian: 1472

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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MUN5234DW1T1
ON Semiconductor

MUN5234DW1T1

bahagian bahagian: 1434

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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EMG2DXV5T1
ON Semiconductor

EMG2DXV5T1

bahagian bahagian: 1505

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSB13211DW6T1G
ON Semiconductor

NSB13211DW6T1G

bahagian bahagian: 3211

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, 10 kOhms, Perintang - Pangkalan Pemancar (R2): 4.7 kOhms, 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V / 15 @ 5mA, 10V,

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NSVUMC5NT2G
ON Semiconductor

NSVUMC5NT2G

bahagian bahagian: 151655

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 20 @ 5mA, 10V,

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MUN5312DW1T1G
ON Semiconductor

MUN5312DW1T1G

bahagian bahagian: 189298

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

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NSBC143ZDXV6T1G
ON Semiconductor

NSBC143ZDXV6T1G

bahagian bahagian: 189558

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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UMC2NT1G
ON Semiconductor

UMC2NT1G

bahagian bahagian: 1438

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

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EMD4DXV6T5G
ON Semiconductor

EMD4DXV6T5G

bahagian bahagian: 147880

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, 10 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSBA124EDP6T5G
ON Semiconductor

NSBA124EDP6T5G

bahagian bahagian: 21627

Jenis Transistor: 2 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

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