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Diod - Pembetulan - Bujang

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  • Diod - Pembetulan - Bujang
FFB10UP20STM
ON Semiconductor

FFB10UP20STM

bahagian bahagian: 68263

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 45ns,

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SURD8530T4G-VF01
ON Semiconductor

SURD8530T4G-VF01

bahagian bahagian: 196978

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 300V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.05V @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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NSVR0230P2T5G
ON Semiconductor

NSVR0230P2T5G

bahagian bahagian: 109697

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 200mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 500mV @ 200mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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MBRA210LT3G
ON Semiconductor

MBRA210LT3G

bahagian bahagian: 124278

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 10V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 350mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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NRVB140SFT1G
ON Semiconductor

NRVB140SFT1G

bahagian bahagian: 172872

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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NRVBS360BT3G
ON Semiconductor

NRVBS360BT3G

bahagian bahagian: 151672

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 630mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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NGTD15R65F2SWK
ON Semiconductor

NGTD15R65F2SWK

bahagian bahagian: 69

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 650V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.9V @ 25A,

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NHPM120T3G
ON Semiconductor

NHPM120T3G

bahagian bahagian: 130173

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 25ns,

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SURHS8160T3G
ON Semiconductor

SURHS8160T3G

bahagian bahagian: 151575

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.4V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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NSVBAS21M3T5G
ON Semiconductor

NSVBAS21M3T5G

bahagian bahagian: 125629

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 250V, Semasa - Rata-rata Disahkan (Io): 200mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 200mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 50ns,

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MUR110RLG
ON Semiconductor

MUR110RLG

bahagian bahagian: 189756

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 875mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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S1BFL
ON Semiconductor

S1BFL

bahagian bahagian: 116202

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

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NRVTSAF260ET3G
ON Semiconductor

NRVTSAF260ET3G

bahagian bahagian: 125955

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 650mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBRM120ET1G
ON Semiconductor

MBRM120ET1G

bahagian bahagian: 113791

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 530mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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RGP10M
ON Semiconductor

RGP10M

bahagian bahagian: 173251

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 500ns,

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MUR220RLG
ON Semiconductor

MUR220RLG

bahagian bahagian: 195411

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 950mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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SURA8110T3G
ON Semiconductor

SURA8110T3G

bahagian bahagian: 134961

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 875mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 30ns,

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NRVTSA4100T3G
ON Semiconductor

NRVTSA4100T3G

bahagian bahagian: 142089

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 4A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 660mV @ 4A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MUR180ERLG
ON Semiconductor

MUR180ERLG

bahagian bahagian: 199163

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.75V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 100ns,

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MUR480ERLG
ON Semiconductor

MUR480ERLG

bahagian bahagian: 113383

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 4A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.85V @ 4A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 100ns,

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RURP1560-F085P
ON Semiconductor

RURP1560-F085P

bahagian bahagian: 101

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 15A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 70ns,

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NRVBA140T3G
ON Semiconductor

NRVBA140T3G

bahagian bahagian: 192744

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MUR2100ERLG
ON Semiconductor

MUR2100ERLG

bahagian bahagian: 182755

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.2V @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 100ns,

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MBRS1540T3G
ON Semiconductor

MBRS1540T3G

bahagian bahagian: 166482

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 460mV @ 1.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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NRVBSS26T3G
ON Semiconductor

NRVBSS26T3G

bahagian bahagian: 86

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 630mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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SS14FP
ON Semiconductor

SS14FP

bahagian bahagian: 117916

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 6ns,

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SURA8240T3G
ON Semiconductor

SURA8240T3G

bahagian bahagian: 147389

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 65ns,

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MBR1635G
ON Semiconductor

MBR1635G

bahagian bahagian: 76310

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 35V, Semasa - Rata-rata Disahkan (Io): 16A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 630mV @ 16A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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SURA8215T3G
ON Semiconductor

SURA8215T3G

bahagian bahagian: 156849

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 950mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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GF1M
ON Semiconductor

GF1M

bahagian bahagian: 106233

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

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EGP30K
ON Semiconductor

EGP30K

bahagian bahagian: 119966

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

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NSR20204NXT5G
ON Semiconductor

NSR20204NXT5G

bahagian bahagian: 197863

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 2A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 600mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 28ns,

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NRVBM110LT1G
ON Semiconductor

NRVBM110LT1G

bahagian bahagian: 184513

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 10V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 415mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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NRVUA210VT3G
ON Semiconductor

NRVUA210VT3G

bahagian bahagian: 199419

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 940mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 30ns,

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SBR835LT4G-VF01
ON Semiconductor

SBR835LT4G-VF01

bahagian bahagian: 189514

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 35V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 510mV @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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NRVBS410LT3G
ON Semiconductor

NRVBS410LT3G

bahagian bahagian: 91832

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 10V, Semasa - Rata-rata Disahkan (Io): 4A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 330mV @ 4A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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