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Transistor - Bipolar (BJT) - Bujang

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  • Transistor - Bipolar (BJT) - Bujang
FJX992TF
ON Semiconductor

FJX992TF

bahagian bahagian: 123840

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V,

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FJPF5021O
ON Semiconductor

FJPF5021O

bahagian bahagian: 6070

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 500V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 600mA, 3A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20 @ 600mA, 5V,

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MJD253T4G
ON Semiconductor

MJD253T4G

bahagian bahagian: 143073

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 4A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 100mA, 1A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V,

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NJW3281G
ON Semiconductor

NJW3281G

bahagian bahagian: 27850

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 15A, Voltan - Pemecahan Pemancar Pemungut (Maks): 250V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 800mA, 8A, Semasa - Potongan Pemungut (Maksimum): 50µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 75 @ 3A, 5V,

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NSVMMBT3906TT1G
ON Semiconductor

NSVMMBT3906TT1G

bahagian bahagian: 174975

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 5mA, 50mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V,

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FJAF4210YTU
ON Semiconductor

FJAF4210YTU

bahagian bahagian: 35767

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 10A, Voltan - Pemecahan Pemancar Pemungut (Maks): 140V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 500mA, 5A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 90 @ 3A, 4V,

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KSH127TM
ON Semiconductor

KSH127TM

bahagian bahagian: 158308

Jenis Transistor: PNP - Darlington, Semasa - Pemungut (Ic) (Maks): 8A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 4V @ 80mA, 8A, Semasa - Potongan Pemungut (Maksimum): 10µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V,

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MJD5731T4
ON Semiconductor

MJD5731T4

bahagian bahagian: 6330

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 350V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 200mA, 1A, Semasa - Potongan Pemungut (Maksimum): 100µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V,

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FJP5027O
ON Semiconductor

FJP5027O

bahagian bahagian: 6107

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 800V, Ketepuan Vce (Maks) @ Ib, Ic: 2V @ 300mA, 1.5A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V,

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MPSA56RLRPG
ON Semiconductor

MPSA56RLRPG

bahagian bahagian: 6446

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V,

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MCH6102-TL-E
ON Semiconductor

MCH6102-TL-E

bahagian bahagian: 167629

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 1.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 375mV @ 15mA, 750mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V,

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NJL21194DG
ON Semiconductor

NJL21194DG

bahagian bahagian: 6396

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 16A, Voltan - Pemecahan Pemancar Pemungut (Maks): 250V, Ketepuan Vce (Maks) @ Ib, Ic: 4V @ 3.2A, 16A, Semasa - Potongan Pemungut (Maksimum): 100µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V,

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PZT2907AT3
ON Semiconductor

PZT2907AT3

bahagian bahagian: 6484

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 10nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

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FSB6714
ON Semiconductor

FSB6714

bahagian bahagian: 6475

Jenis Transistor: NPN, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V,

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MPS2369A
ON Semiconductor

MPS2369A

bahagian bahagian: 6432

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 15V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 400nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V,

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MPSA93_D27Z
ON Semiconductor

MPSA93_D27Z

bahagian bahagian: 6501

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 200V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 2mA, 20mA, Semasa - Potongan Pemungut (Maksimum): 250nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V,

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PN100A_D26Z
ON Semiconductor

PN100A_D26Z

bahagian bahagian: 6708

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 20mA, 200mA, Semasa - Potongan Pemungut (Maksimum): 50nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 1V,

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MPSA64RLRMG
ON Semiconductor

MPSA64RLRMG

bahagian bahagian: 6456

Jenis Transistor: PNP - Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 100µA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V,

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MPSA06RL1
ON Semiconductor

MPSA06RL1

bahagian bahagian: 6441

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V,

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MPSA42RLRFG
ON Semiconductor

MPSA42RLRFG

bahagian bahagian: 6370

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 300V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 2mA, 20mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 25 @ 1mA, 10V,

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MJE18004D2G
ON Semiconductor

MJE18004D2G

bahagian bahagian: 6380

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 450V, Ketepuan Vce (Maks) @ Ib, Ic: 750mV @ 400mA, 2A, Semasa - Potongan Pemungut (Maksimum): 100µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 6 @ 2A, 1V,

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P2N2222AZL1G
ON Semiconductor

P2N2222AZL1G

bahagian bahagian: 6415

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 10nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

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KSH44H11TM
ON Semiconductor

KSH44H11TM

bahagian bahagian: 182291

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 8A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 400mA, 8A, Semasa - Potongan Pemungut (Maksimum): 10µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V,

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MJD31CTF_NBDD001
ON Semiconductor

MJD31CTF_NBDD001

bahagian bahagian: 6516

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 1.2V @ 375mA, 3A, Semasa - Potongan Pemungut (Maksimum): 50µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V,

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MJD44H11T5G
ON Semiconductor

MJD44H11T5G

bahagian bahagian: 129504

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 8A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 400mA, 8A, Semasa - Potongan Pemungut (Maksimum): 1µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V,

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NJVMJD112T4G
ON Semiconductor

NJVMJD112T4G

bahagian bahagian: 138776

Jenis Transistor: NPN - Darlington, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 3V @ 40mA, 4A, Semasa - Potongan Pemungut (Maksimum): 20µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V,

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KSC2335OTU
ON Semiconductor

KSC2335OTU

bahagian bahagian: 6107

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 7A, Voltan - Pemecahan Pemancar Pemungut (Maks): 400V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 600mA, 3A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 1A, 5V,

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KSB707RTU
ON Semiconductor

KSB707RTU

bahagian bahagian: 6068

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 7A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 500mA, 5A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 3A, 1V,

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MPSA06_D75Z
ON Semiconductor

MPSA06_D75Z

bahagian bahagian: 6529

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V,

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PN2222AG
ON Semiconductor

PN2222AG

bahagian bahagian: 6433

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 10nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

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MMBT6427LT3G
ON Semiconductor

MMBT6427LT3G

bahagian bahagian: 6412

Jenis Transistor: NPN - Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 500µA, 500mA, Semasa - Potongan Pemungut (Maksimum): 1µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V,

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P2N2907ARL1G
ON Semiconductor

P2N2907ARL1G

bahagian bahagian: 6406

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 10nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

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NSS35200MR6T1G
ON Semiconductor

NSS35200MR6T1G

bahagian bahagian: 107557

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 35V, Ketepuan Vce (Maks) @ Ib, Ic: 310mV @ 20mA, 2A, Semasa - Potongan Pemungut (Maksimum): 100nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 1.5V,

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KSC5504DTM
ON Semiconductor

KSC5504DTM

bahagian bahagian: 6172

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 4A, Voltan - Pemecahan Pemancar Pemungut (Maks): 600V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 400mA, 2A, Semasa - Potongan Pemungut (Maksimum): 100µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 4 @ 2A, 1V,

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MMBT3904_D87Z
ON Semiconductor

MMBT3904_D87Z

bahagian bahagian: 5761

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 5mA, 50mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V,

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MPS8099RLRPG
ON Semiconductor

MPS8099RLRPG

bahagian bahagian: 6431

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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