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Transistor - Bipolar (BJT) - Bujang

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  • Transistor - Bipolar (BJT) - Bujang
NSVBC858CLT1G
ON Semiconductor

NSVBC858CLT1G

bahagian bahagian: 178054

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 650mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V,

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KSA1010OTU
ON Semiconductor

KSA1010OTU

bahagian bahagian: 6097

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 7A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 500mA, 5A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 60 @ 3A, 5V,

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MPSA06_D27Z
ON Semiconductor

MPSA06_D27Z

bahagian bahagian: 6509

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V,

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MPSA43ZL1G
ON Semiconductor

MPSA43ZL1G

bahagian bahagian: 6728

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 200V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 2mA, 20mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 25 @ 1mA, 10V,

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FJPF5021RTSTU
ON Semiconductor

FJPF5021RTSTU

bahagian bahagian: 6095

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 500V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 600mA, 3A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 15 @ 600mA, 5V,

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MSD1328-ST1G
ON Semiconductor

MSD1328-ST1G

bahagian bahagian: 6464

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 20mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V,

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MPSA55G
ON Semiconductor

MPSA55G

bahagian bahagian: 6382

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V,

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MPSA44RLRAG
ON Semiconductor

MPSA44RLRAG

bahagian bahagian: 6109

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 300mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 400V, Ketepuan Vce (Maks) @ Ib, Ic: 750mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 500nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V,

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TIP140TU
ON Semiconductor

TIP140TU

bahagian bahagian: 6147

Jenis Transistor: NPN - Darlington, Semasa - Pemungut (Ic) (Maks): 10A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 3V @ 40mA, 10A, Semasa - Potongan Pemungut (Maksimum): 2mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V,

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MPSA92_D27Z
ON Semiconductor

MPSA92_D27Z

bahagian bahagian: 6517

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 300V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 2mA, 20mA, Semasa - Potongan Pemungut (Maksimum): 250nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V,

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MPS8098_D27Z
ON Semiconductor

MPS8098_D27Z

bahagian bahagian: 6483

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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MMBTA20LT1G
ON Semiconductor

MMBTA20LT1G

bahagian bahagian: 6366

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 10V,

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FJP5021OVTU
ON Semiconductor

FJP5021OVTU

bahagian bahagian: 6684

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 500V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 600mA, 3A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20 @ 600mA, 5V,

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MMBTA56_D87Z
ON Semiconductor

MMBTA56_D87Z

bahagian bahagian: 6454

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 200mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V,

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MJ11022
ON Semiconductor

MJ11022

bahagian bahagian: 6332

Jenis Transistor: NPN - Darlington, Semasa - Pemungut (Ic) (Maks): 15A, Voltan - Pemecahan Pemancar Pemungut (Maks): 250V, Ketepuan Vce (Maks) @ Ib, Ic: 3.4V @ 150mA, 15A, Semasa - Potongan Pemungut (Maksimum): 1mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V,

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MJ11030G
ON Semiconductor

MJ11030G

bahagian bahagian: 6380

Jenis Transistor: NPN - Darlington, Semasa - Pemungut (Ic) (Maks): 50A, Voltan - Pemecahan Pemancar Pemungut (Maks): 90V, Ketepuan Vce (Maks) @ Ib, Ic: 3.5V @ 500mA, 50A, Semasa - Potongan Pemungut (Maksimum): 2mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 25A, 5V,

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NSS20501UW3TBG
ON Semiconductor

NSS20501UW3TBG

bahagian bahagian: 111556

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Ketepuan Vce (Maks) @ Ib, Ic: 125mV @ 400mA, 4A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V,

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MPSA92_D75Z
ON Semiconductor

MPSA92_D75Z

bahagian bahagian: 6549

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 300V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 2mA, 20mA, Semasa - Potongan Pemungut (Maksimum): 250nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V,

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NSS40601CF8T1G
ON Semiconductor

NSS40601CF8T1G

bahagian bahagian: 118178

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 6A, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 135mV @ 400mA, 4A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V,

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MSB710-RT1
ON Semiconductor

MSB710-RT1

bahagian bahagian: 6452

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 30mA, 300mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 150mA, 10V,

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MPSA12G
ON Semiconductor

MPSA12G

bahagian bahagian: 6457

Jenis Transistor: NPN - Darlington, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 10µA, 10mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20000 @ 10mA, 5V,

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MPS3702_D27Z
ON Semiconductor

MPS3702_D27Z

bahagian bahagian: 6486

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 25V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V,

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FJP5027R
ON Semiconductor

FJP5027R

bahagian bahagian: 6125

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 800V, Ketepuan Vce (Maks) @ Ib, Ic: 2V @ 300mA, 1.5A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 15 @ 200mA, 5V,

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MPSW55G
ON Semiconductor

MPSW55G

bahagian bahagian: 6403

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 10mA, 250mA, Semasa - Potongan Pemungut (Maksimum): 500nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V,

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MPSA20_D27Z
ON Semiconductor

MPSA20_D27Z

bahagian bahagian: 6513

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 10V,

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MPSW45RLRE
ON Semiconductor

MPSW45RLRE

bahagian bahagian: 6440

Jenis Transistor: NPN - Darlington, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 2mA, 1A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V,

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TIP106
ON Semiconductor

TIP106

bahagian bahagian: 6478

Jenis Transistor: PNP - Darlington, Semasa - Pemungut (Ic) (Maks): 8A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 2.5V @ 80mA, 8A, Semasa - Potongan Pemungut (Maksimum): 50µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V,

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FJP5304D
ON Semiconductor

FJP5304D

bahagian bahagian: 6073

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 4A, Voltan - Pemecahan Pemancar Pemungut (Maks): 400V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 500mA, 2.5A, Semasa - Potongan Pemungut (Maksimum): 250mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V,

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KSE13003H3ASTU
ON Semiconductor

KSE13003H3ASTU

bahagian bahagian: 6497

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 400V, Ketepuan Vce (Maks) @ Ib, Ic: 3V @ 500mA, 1.5A, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 19 @ 500mA, 2V,

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FJP13007H1TU
ON Semiconductor

FJP13007H1TU

bahagian bahagian: 90440

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 8A, Voltan - Pemecahan Pemancar Pemungut (Maks): 400V, Ketepuan Vce (Maks) @ Ib, Ic: 3V @ 2A, 8A, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 15 @ 2A, 5V,

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MPSA12
ON Semiconductor

MPSA12

bahagian bahagian: 6443

Jenis Transistor: NPN - Darlington, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 10µA, 10mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20000 @ 10mA, 5V,

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MMBT6520LT3
ON Semiconductor

MMBT6520LT3

bahagian bahagian: 6425

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 350V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 50nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V,

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MPSA93_D74Z
ON Semiconductor

MPSA93_D74Z

bahagian bahagian: 6510

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 200V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 2mA, 20mA, Semasa - Potongan Pemungut (Maksimum): 250nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V,

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MPSA13_D26Z
ON Semiconductor

MPSA13_D26Z

bahagian bahagian: 6551

Jenis Transistor: NPN - Darlington, Semasa - Pemungut (Ic) (Maks): 1.2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 100µA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V,

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MPS6729
ON Semiconductor

MPS6729

bahagian bahagian: 6391

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 10mA, 250mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V,

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MPS2907AZL1
ON Semiconductor

MPS2907AZL1

bahagian bahagian: 6403

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 10nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

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