Transistor - FET, MOSFET - Bujang

Rumah
Transistor - FET, MOSFET - Bujang

STMicroelectronics

STU3LN62K3

bahagian bahagian: 51638

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 620V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 3 Ohm @ 1.25A, 10V,

Senarai harapan

STMicroelectronics

STP45NF06

bahagian bahagian: 55130

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 38A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 19A, 10V,

Senarai harapan

STMicroelectronics

STB60NF06T4

bahagian bahagian: 82455

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 16 mOhm @ 30A, 10V,

Senarai harapan

STMicroelectronics

STB42N60M2-EP

bahagian bahagian: 23744

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 34A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 87 mOhm @ 17A, 10V,

Senarai harapan

STMicroelectronics

STE60N105DK5

bahagian bahagian: 1903

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 1050V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 46A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 120 mOhm @ 23A, 10V,

Senarai harapan

STMicroelectronics

STW57N65M5

bahagian bahagian: 5021

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 42A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 63 mOhm @ 21A, 10V,

Senarai harapan

STMicroelectronics

STU80N4F6

bahagian bahagian: 36435

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 80A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 6.3 mOhm @ 40A, 10V,

Senarai harapan

STMicroelectronics

STP7N60M2

bahagian bahagian: 46389

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 950 mOhm @ 2.5A, 10V,

Senarai harapan

STMicroelectronics

STQ1HN60K3-AP

bahagian bahagian: 123790

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 400mA (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 8 Ohm @ 600mA, 10V,

Senarai harapan

STMicroelectronics

STB21NM60ND

bahagian bahagian: 20199

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 17A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 220 mOhm @ 8.5A, 10V,

Senarai harapan

STMicroelectronics

STB35NF10T4

bahagian bahagian: 72944

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 40A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 17.5A, 10V,

Senarai harapan

STMicroelectronics

STW12NK80Z

bahagian bahagian: 14247

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 800V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10.5A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 750 mOhm @ 5.25A, 10V,

Senarai harapan

STMicroelectronics

STF17NF25

bahagian bahagian: 29197

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 250V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 17A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 165 mOhm @ 8.5A, 10V,

Senarai harapan

STMicroelectronics

STB45N50DM2AG

bahagian bahagian: 25746

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 35A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 84 mOhm @ 17.5A, 10V,

Senarai harapan

STMicroelectronics

STP30NF10

bahagian bahagian: 44709

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 35A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 15A, 10V,

Senarai harapan

STMicroelectronics

STW50N65DM2AG

bahagian bahagian: 9391

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 28A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 87 mOhm @ 19A, 10V,

Senarai harapan

STMicroelectronics

STW69N65M5

bahagian bahagian: 3411

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 58A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 29A, 10V,

Senarai harapan

STMicroelectronics

STW34N65M5

bahagian bahagian: 6460

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 28A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 110 mOhm @ 14A, 10V,

Senarai harapan

STMicroelectronics

SCTWA50N120

bahagian bahagian: 2914

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 1200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 65A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 20V, Rds On (Maks) @ Id, Vgs: 69 mOhm @ 40A, 20V,

Senarai harapan

STMicroelectronics

STP10NM60N

bahagian bahagian: 23282

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 550 mOhm @ 4A, 10V,

Senarai harapan

STB80NF55L-08-1

STMicroelectronics

STB80NF55L-08-1

bahagian bahagian: 21569

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 80A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 8 mOhm @ 40A, 10V,

Senarai harapan

STMicroelectronics

STF7N60M2

bahagian bahagian: 45817

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 950 mOhm @ 2.5A, 10V,

Senarai harapan

STMicroelectronics

STB180N55F3

bahagian bahagian: 20195

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 3.5 mOhm @ 60A, 10V,

Senarai harapan

STMicroelectronics

STP4NK80Z

bahagian bahagian: 40922

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 800V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 3.5 Ohm @ 1.5A, 10V,

Senarai harapan

STMicroelectronics

STB270N4F3

bahagian bahagian: 27514

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 160A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 2.5 mOhm @ 80A, 10V,

Senarai harapan

STMicroelectronics

STP40NF10L

bahagian bahagian: 32481

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 40A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 33 mOhm @ 20A, 10V,

Senarai harapan

STMicroelectronics

SCT30N120

bahagian bahagian: 2560

Jenis FET: N-Channel, Teknologi: SiCFET (Silicon Carbide), Saliran ke Voltan Sumber (Vdss): 1200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 40A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 20V, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 20A, 20V,

Senarai harapan

STMicroelectronics

STB19NF20

bahagian bahagian: 72888

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 160 mOhm @ 7.5A, 10V,

Senarai harapan

STMicroelectronics

STP36NF06L

bahagian bahagian: 45226

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 15A, 10V,

Senarai harapan

STMicroelectronics

STB7N52K3

bahagian bahagian: 64351

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 525V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 980 mOhm @ 3.1A, 10V,

Senarai harapan

STMicroelectronics

STL18N55M5

bahagian bahagian: 1558

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 550V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.4A (Ta), 13A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 270 mOhm @ 6A, 10V,

Senarai harapan

STMicroelectronics

STP80NF10

bahagian bahagian: 23718

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 80A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 15 mOhm @ 40A, 10V,

Senarai harapan

STMicroelectronics

STD60N3LH5

bahagian bahagian: 1537

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 48A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 8 mOhm @ 24A, 10V,

Senarai harapan

STMicroelectronics

STD60NH03L-1

bahagian bahagian: 1532

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 9 mOhm @ 30A, 10V,

Senarai harapan

STMicroelectronics

STB12NM50N

bahagian bahagian: 1469

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 380 mOhm @ 5.5A, 10V,

Senarai harapan

STMicroelectronics

STH250N55F3-6

bahagian bahagian: 6182

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 180A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 2.6 mOhm @ 60A, 10V,

Senarai harapan

2198

«
27
28
29
30
31
32
33
34
35
36
»