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Diod - Zener - Bujang

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  • Diod - Zener - Bujang
1N4730G R0G
Taiwan Semiconductor Corporation

1N4730G R0G

bahagian bahagian: 182

Voltan - Zener (Nom) (Vz): 3.9V, Toleransi: ±5%, Kuasa - Maks: 1W, Impedans (Maks) (Zzt): 9 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 200mA,

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1N4749G R0G
Taiwan Semiconductor Corporation

1N4749G R0G

bahagian bahagian: 185

Voltan - Zener (Nom) (Vz): 24V, Toleransi: ±5%, Kuasa - Maks: 1W, Impedans (Maks) (Zzt): 25 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 18.2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 200mA,

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1N5235B A0G
Taiwan Semiconductor Corporation

1N5235B A0G

bahagian bahagian: 188

Voltan - Zener (Nom) (Vz): 6.8V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 5 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 5V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 200mA,

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1N4744G R0G
Taiwan Semiconductor Corporation

1N4744G R0G

bahagian bahagian: 213

Voltan - Zener (Nom) (Vz): 15V, Toleransi: ±5%, Kuasa - Maks: 1W, Impedans (Maks) (Zzt): 14 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 11.4V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 200mA,

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1N4745G R0G
Taiwan Semiconductor Corporation

1N4745G R0G

bahagian bahagian: 154

Voltan - Zener (Nom) (Vz): 16V, Toleransi: ±5%, Kuasa - Maks: 1W, Impedans (Maks) (Zzt): 16 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 12.2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 200mA,

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1N4728G R0G
Taiwan Semiconductor Corporation

1N4728G R0G

bahagian bahagian: 206

Voltan - Zener (Nom) (Vz): 3.3V, Toleransi: ±5%, Kuasa - Maks: 1W, Impedans (Maks) (Zzt): 10 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 200mA,

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1N4751G R0G
Taiwan Semiconductor Corporation

1N4751G R0G

bahagian bahagian: 242

Voltan - Zener (Nom) (Vz): 30V, Toleransi: ±5%, Kuasa - Maks: 1W, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 22.8V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 200mA,

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1N4735G R0G
Taiwan Semiconductor Corporation

1N4735G R0G

bahagian bahagian: 212

Voltan - Zener (Nom) (Vz): 6.2V, Toleransi: ±5%, Kuasa - Maks: 1W, Impedans (Maks) (Zzt): 2 Ohms, Semasa - Kebocoran Terbalik @ Vr: 10µA @ 3V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 200mA,

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1N5237B A0G
Taiwan Semiconductor Corporation

1N5237B A0G

bahagian bahagian: 219

Voltan - Zener (Nom) (Vz): 8.2V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 8 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 6.5V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 200mA,

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1N5242B A0G
Taiwan Semiconductor Corporation

1N5242B A0G

bahagian bahagian: 205

Voltan - Zener (Nom) (Vz): 12V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 500nA @ 9V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 200mA,

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1N5263B A0G
Taiwan Semiconductor Corporation

1N5263B A0G

bahagian bahagian: 283

Voltan - Zener (Nom) (Vz): 56V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 150 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 43V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 200mA,

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1N5238B A0G
Taiwan Semiconductor Corporation

1N5238B A0G

bahagian bahagian: 205

Voltan - Zener (Nom) (Vz): 8.7V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 8 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 6.5V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 200mA,

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1N5232B A0G
Taiwan Semiconductor Corporation

1N5232B A0G

bahagian bahagian: 207

Voltan - Zener (Nom) (Vz): 5.6V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 11 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 3V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 200mA,

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1N5243B A0G
Taiwan Semiconductor Corporation

1N5243B A0G

bahagian bahagian: 239

Voltan - Zener (Nom) (Vz): 13V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 13 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 10V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 200mA,

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1N5258B A0G
Taiwan Semiconductor Corporation

1N5258B A0G

bahagian bahagian: 255

Voltan - Zener (Nom) (Vz): 36V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 70 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 27V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 200mA,

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1N5253B A0G
Taiwan Semiconductor Corporation

1N5253B A0G

bahagian bahagian: 224

Voltan - Zener (Nom) (Vz): 25V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 35 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 18V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 200mA,

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1N5228B A0G
Taiwan Semiconductor Corporation

1N5228B A0G

bahagian bahagian: 254

Voltan - Zener (Nom) (Vz): 3.9V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 23 Ohms, Semasa - Kebocoran Terbalik @ Vr: 10µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 200mA,

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1N5250B A0G
Taiwan Semiconductor Corporation

1N5250B A0G

bahagian bahagian: 244

Voltan - Zener (Nom) (Vz): 20V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 25 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 15V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 200mA,

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1N5239B A0G
Taiwan Semiconductor Corporation

1N5239B A0G

bahagian bahagian: 226

Voltan - Zener (Nom) (Vz): 9.1V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 10 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 7V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 200mA,

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1N5254B A0G
Taiwan Semiconductor Corporation

1N5254B A0G

bahagian bahagian: 253

Voltan - Zener (Nom) (Vz): 27V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 41 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 21V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 200mA,

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1N5241B A0G
Taiwan Semiconductor Corporation

1N5241B A0G

bahagian bahagian: 230

Voltan - Zener (Nom) (Vz): 11V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 22 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 8.4V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 200mA,

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1N5257B A0G
Taiwan Semiconductor Corporation

1N5257B A0G

bahagian bahagian: 241

Voltan - Zener (Nom) (Vz): 33V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 58 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 25V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 200mA,

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1N5236B A0G
Taiwan Semiconductor Corporation

1N5236B A0G

bahagian bahagian: 276

Voltan - Zener (Nom) (Vz): 7.5V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 6 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 6V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 200mA,

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1N5234B A0G
Taiwan Semiconductor Corporation

1N5234B A0G

bahagian bahagian: 249

Voltan - Zener (Nom) (Vz): 6.2V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 7 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 4V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 200mA,

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1N5233B A0G
Taiwan Semiconductor Corporation

1N5233B A0G

bahagian bahagian: 218

Voltan - Zener (Nom) (Vz): 6V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 7 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 3.5V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 200mA,

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1N5260B A0G
Taiwan Semiconductor Corporation

1N5260B A0G

bahagian bahagian: 251

Voltan - Zener (Nom) (Vz): 43V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 93 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 33V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 200mA,

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1N5255B A0G
Taiwan Semiconductor Corporation

1N5255B A0G

bahagian bahagian: 260

Voltan - Zener (Nom) (Vz): 28V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 44 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 21V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 200mA,

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1N5244B A0G
Taiwan Semiconductor Corporation

1N5244B A0G

bahagian bahagian: 275

Voltan - Zener (Nom) (Vz): 14V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 10V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 200mA,

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1N5248B A0G
Taiwan Semiconductor Corporation

1N5248B A0G

bahagian bahagian: 195

Voltan - Zener (Nom) (Vz): 18V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 21 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 14V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 200mA,

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1N5230B A0G
Taiwan Semiconductor Corporation

1N5230B A0G

bahagian bahagian: 286

Voltan - Zener (Nom) (Vz): 4.7V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 19 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 200mA,

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1N5231B A0G
Taiwan Semiconductor Corporation

1N5231B A0G

bahagian bahagian: 245

Voltan - Zener (Nom) (Vz): 5.1V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 17 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 200mA,

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1N5229B A0G
Taiwan Semiconductor Corporation

1N5229B A0G

bahagian bahagian: 247

Voltan - Zener (Nom) (Vz): 4.3V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 22 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 200mA,

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1N5256B A0G
Taiwan Semiconductor Corporation

1N5256B A0G

bahagian bahagian: 244

Voltan - Zener (Nom) (Vz): 30V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 49 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 23V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 200mA,

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1N5240B A0G
Taiwan Semiconductor Corporation

1N5240B A0G

bahagian bahagian: 268

Voltan - Zener (Nom) (Vz): 10V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 17 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2µA @ 8V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 200mA,

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1N5246B A0G
Taiwan Semiconductor Corporation

1N5246B A0G

bahagian bahagian: 204

Voltan - Zener (Nom) (Vz): 16V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 17 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 12V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 200mA,

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1N5251B A0G
Taiwan Semiconductor Corporation

1N5251B A0G

bahagian bahagian: 244

Voltan - Zener (Nom) (Vz): 22V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 29 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 17V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 200mA,

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