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Diod - Zener - Bujang

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  • Diod - Zener - Bujang
BZT55C16 L0G
Taiwan Semiconductor Corporation

BZT55C16 L0G

bahagian bahagian: 172

Voltan - Zener (Nom) (Vz): 16V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 12V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZX55B5V1 A0G
Taiwan Semiconductor Corporation

BZX55B5V1 A0G

bahagian bahagian: 173

Voltan - Zener (Nom) (Vz): 5.1V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 35 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZX55B39 A0G
Taiwan Semiconductor Corporation

BZX55B39 A0G

bahagian bahagian: 173

Voltan - Zener (Nom) (Vz): 39V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 28V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZX85C56 A0G
Taiwan Semiconductor Corporation

BZX85C56 A0G

bahagian bahagian: 127

Voltan - Zener (Nom) (Vz): 56V, Toleransi: ±5%, Kuasa - Maks: 1.3W, Impedans (Maks) (Zzt): 120 Ohms, Semasa - Kebocoran Terbalik @ Vr: 500nA @ 39V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 10mA,

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BZT55C43 L0G
Taiwan Semiconductor Corporation

BZT55C43 L0G

bahagian bahagian: 111

Voltan - Zener (Nom) (Vz): 43V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 32V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT55B3V3 L0G
Taiwan Semiconductor Corporation

BZT55B3V3 L0G

bahagian bahagian: 144

Voltan - Zener (Nom) (Vz): 3.3V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 85 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZX55B6V8 A0G
Taiwan Semiconductor Corporation

BZX55B6V8 A0G

bahagian bahagian: 160

Voltan - Zener (Nom) (Vz): 6.8V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 8 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 3V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZX584B7V5 RKG
Taiwan Semiconductor Corporation

BZX584B7V5 RKG

bahagian bahagian: 127

Voltan - Zener (Nom) (Vz): 7.5V, Toleransi: ±2%, Kuasa - Maks: 150mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 5V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT55C75 L0G
Taiwan Semiconductor Corporation

BZT55C75 L0G

bahagian bahagian: 171

Voltan - Zener (Nom) (Vz): 75V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 170 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 56V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZX79C43 A0G
Taiwan Semiconductor Corporation

BZX79C43 A0G

bahagian bahagian: 149

Voltan - Zener (Nom) (Vz): 43V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 150 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 30.1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 100mA,

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BZX584B11 RKG
Taiwan Semiconductor Corporation

BZX584B11 RKG

bahagian bahagian: 166

Voltan - Zener (Nom) (Vz): 11V, Toleransi: ±2%, Kuasa - Maks: 150mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 8V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZX55B2V7 A0G
Taiwan Semiconductor Corporation

BZX55B2V7 A0G

bahagian bahagian: 107

Voltan - Zener (Nom) (Vz): 2.7V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 85 Ohms, Semasa - Kebocoran Terbalik @ Vr: 10µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZT55B13 L0G
Taiwan Semiconductor Corporation

BZT55B13 L0G

bahagian bahagian: 110

Voltan - Zener (Nom) (Vz): 13V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 26 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 10V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZX55C51 A0G
Taiwan Semiconductor Corporation

BZX55C51 A0G

bahagian bahagian: 116

Voltan - Zener (Nom) (Vz): 51V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 125 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 38V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZT55C15 L0G
Taiwan Semiconductor Corporation

BZT55C15 L0G

bahagian bahagian: 151

Voltan - Zener (Nom) (Vz): 15V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 11V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZX85C3V6 A0G
Taiwan Semiconductor Corporation

BZX85C3V6 A0G

bahagian bahagian: 104

Voltan - Zener (Nom) (Vz): 3.6V, Toleransi: ±5%, Kuasa - Maks: 1.3W, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 20µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 10mA,

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BZT55C47 L0G
Taiwan Semiconductor Corporation

BZT55C47 L0G

bahagian bahagian: 114

Voltan - Zener (Nom) (Vz): 47V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 110 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 35V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT55B3V9 L0G
Taiwan Semiconductor Corporation

BZT55B3V9 L0G

bahagian bahagian: 115

Voltan - Zener (Nom) (Vz): 3.9V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 85 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT55C27 L0G
Taiwan Semiconductor Corporation

BZT55C27 L0G

bahagian bahagian: 177

Voltan - Zener (Nom) (Vz): 27V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 20V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZX55C2V4 A0G
Taiwan Semiconductor Corporation

BZX55C2V4 A0G

bahagian bahagian: 142

Voltan - Zener (Nom) (Vz): 2.4V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 85 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZT55C36 L0G
Taiwan Semiconductor Corporation

BZT55C36 L0G

bahagian bahagian: 182

Voltan - Zener (Nom) (Vz): 36V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 27V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZX55B12 A0G
Taiwan Semiconductor Corporation

BZX55B12 A0G

bahagian bahagian: 129

Voltan - Zener (Nom) (Vz): 12V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 9.1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZT55C62 L0G
Taiwan Semiconductor Corporation

BZT55C62 L0G

bahagian bahagian: 177

Voltan - Zener (Nom) (Vz): 62V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 150 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 47V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZX584B5V6 RKG
Taiwan Semiconductor Corporation

BZX584B5V6 RKG

bahagian bahagian: 119

Voltan - Zener (Nom) (Vz): 5.6V, Toleransi: ±2%, Kuasa - Maks: 150mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT55C3V9 L0G
Taiwan Semiconductor Corporation

BZT55C3V9 L0G

bahagian bahagian: 121

Voltan - Zener (Nom) (Vz): 3.9V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 85 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT55B6V8 L0G
Taiwan Semiconductor Corporation

BZT55B6V8 L0G

bahagian bahagian: 188

Voltan - Zener (Nom) (Vz): 6.8V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 8 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 3V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT55C22 L0G
Taiwan Semiconductor Corporation

BZT55C22 L0G

bahagian bahagian: 112

Voltan - Zener (Nom) (Vz): 22V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 55 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 16V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZX55C47 A0G
Taiwan Semiconductor Corporation

BZX55C47 A0G

bahagian bahagian: 162

Voltan - Zener (Nom) (Vz): 47V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 110 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 35V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZT55B39 L0G
Taiwan Semiconductor Corporation

BZT55B39 L0G

bahagian bahagian: 114

Voltan - Zener (Nom) (Vz): 39V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 28V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT55B6V2 L0G
Taiwan Semiconductor Corporation

BZT55B6V2 L0G

bahagian bahagian: 123

Voltan - Zener (Nom) (Vz): 6.2V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 10 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT55B2V7 L0G
Taiwan Semiconductor Corporation

BZT55B2V7 L0G

bahagian bahagian: 108

Voltan - Zener (Nom) (Vz): 2.7V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 85 Ohms, Semasa - Kebocoran Terbalik @ Vr: 10µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZX79C4V3 A0G
Taiwan Semiconductor Corporation

BZX79C4V3 A0G

bahagian bahagian: 141

Voltan - Zener (Nom) (Vz): 4.3V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 100mA,

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BZT55B15 L0G
Taiwan Semiconductor Corporation

BZT55B15 L0G

bahagian bahagian: 113

Voltan - Zener (Nom) (Vz): 15V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 11V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZX55C27 A0G
Taiwan Semiconductor Corporation

BZX55C27 A0G

bahagian bahagian: 121

Voltan - Zener (Nom) (Vz): 27V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 20V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZX55C4V7 A0G
Taiwan Semiconductor Corporation

BZX55C4V7 A0G

bahagian bahagian: 135

Voltan - Zener (Nom) (Vz): 4.7V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 60 Ohms, Semasa - Kebocoran Terbalik @ Vr: 500nA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZT55C68 L0G
Taiwan Semiconductor Corporation

BZT55C68 L0G

bahagian bahagian: 188

Voltan - Zener (Nom) (Vz): 68V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 160 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 51V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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