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Diod - Zener - Bujang

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  • Diod - Zener - Bujang
BZS55B18 RXG
Taiwan Semiconductor Corporation

BZS55B18 RXG

bahagian bahagian: 180

Voltan - Zener (Nom) (Vz): 18V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 50 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 13V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 10mA,

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BZS55C8V2 RXG
Taiwan Semiconductor Corporation

BZS55C8V2 RXG

bahagian bahagian: 195

Voltan - Zener (Nom) (Vz): 8.2V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 7 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 6.2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 10mA,

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BZY55B24 RYG
Taiwan Semiconductor Corporation

BZY55B24 RYG

bahagian bahagian: 268

Voltan - Zener (Nom) (Vz): 24V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 18V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 10mA,

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BZS55B13 RXG
Taiwan Semiconductor Corporation

BZS55B13 RXG

bahagian bahagian: 208

Voltan - Zener (Nom) (Vz): 13V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 26 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 10V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 10mA,

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BZY55B30 RYG
Taiwan Semiconductor Corporation

BZY55B30 RYG

bahagian bahagian: 268

Voltan - Zener (Nom) (Vz): 30V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 22V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 10mA,

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BZS55B20 RXG
Taiwan Semiconductor Corporation

BZS55B20 RXG

bahagian bahagian: 233

Voltan - Zener (Nom) (Vz): 20V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 55 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 15V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 10mA,

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BZS55B3V0 RXG
Taiwan Semiconductor Corporation

BZS55B3V0 RXG

bahagian bahagian: 256

Voltan - Zener (Nom) (Vz): 3V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 85 Ohms, Semasa - Kebocoran Terbalik @ Vr: 4µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 10mA,

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BZY55C4V3 RYG
Taiwan Semiconductor Corporation

BZY55C4V3 RYG

bahagian bahagian: 197

Voltan - Zener (Nom) (Vz): 4.3V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 10mA,

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BZY55B6V8 RYG
Taiwan Semiconductor Corporation

BZY55B6V8 RYG

bahagian bahagian: 211

Voltan - Zener (Nom) (Vz): 6.8V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 8 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 3V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 10mA,

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BZS55B4V7 RXG
Taiwan Semiconductor Corporation

BZS55B4V7 RXG

bahagian bahagian: 185

Voltan - Zener (Nom) (Vz): 4.7V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 70 Ohms, Semasa - Kebocoran Terbalik @ Vr: 500nA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 10mA,

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BZY55C7V5 RYG
Taiwan Semiconductor Corporation

BZY55C7V5 RYG

bahagian bahagian: 232

Voltan - Zener (Nom) (Vz): 7.5V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 7 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 5V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 10mA,

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BZX55B18 A0G
Taiwan Semiconductor Corporation

BZX55B18 A0G

bahagian bahagian: 254

Voltan - Zener (Nom) (Vz): 18V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 50 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 14V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZX79B8V2 A0G
Taiwan Semiconductor Corporation

BZX79B8V2 A0G

bahagian bahagian: 216

Voltan - Zener (Nom) (Vz): 8.2V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5mA @ 700mV, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 100mA,

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BZX79B39 A0G
Taiwan Semiconductor Corporation

BZX79B39 A0G

bahagian bahagian: 221

Voltan - Zener (Nom) (Vz): 39V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 130 Ohms, Semasa - Kebocoran Terbalik @ Vr: 27.3mA @ 50mV, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 100mA,

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BZX79B30 A0G
Taiwan Semiconductor Corporation

BZX79B30 A0G

bahagian bahagian: 225

Voltan - Zener (Nom) (Vz): 30V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 21mA @ 50mV, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 100mA,

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BZT52B3V9-G RHG
Taiwan Semiconductor Corporation

BZT52B3V9-G RHG

bahagian bahagian: 197

Voltan - Zener (Nom) (Vz): 3.9V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZX79B5V6 A0G
Taiwan Semiconductor Corporation

BZX79B5V6 A0G

bahagian bahagian: 234

Voltan - Zener (Nom) (Vz): 5.6V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2mA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 100mA,

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BZX79B68 A0G
Taiwan Semiconductor Corporation

BZX79B68 A0G

bahagian bahagian: 214

Voltan - Zener (Nom) (Vz): 68V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 240 Ohms, Semasa - Kebocoran Terbalik @ Vr: 47.6mA @ 50mV, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 100mA,

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BZX79B10 A0G
Taiwan Semiconductor Corporation

BZX79B10 A0G

bahagian bahagian: 208

Voltan - Zener (Nom) (Vz): 10V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 7mA @ 200mV, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 100mA,

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BZX55B6V2 A0G
Taiwan Semiconductor Corporation

BZX55B6V2 A0G

bahagian bahagian: 272

Voltan - Zener (Nom) (Vz): 6.2V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 10 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZX79B13 A0G
Taiwan Semiconductor Corporation

BZX79B13 A0G

bahagian bahagian: 236

Voltan - Zener (Nom) (Vz): 13V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 8mA @ 100mV, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 100mA,

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BZX79B5V1 A0G
Taiwan Semiconductor Corporation

BZX79B5V1 A0G

bahagian bahagian: 235

Voltan - Zener (Nom) (Vz): 5.1V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 60 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2mA @ 2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 100mA,

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BZT52B4V3-G RHG
Taiwan Semiconductor Corporation

BZT52B4V3-G RHG

bahagian bahagian: 259

Voltan - Zener (Nom) (Vz): 4.3V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZX79B51 A0G
Taiwan Semiconductor Corporation

BZX79B51 A0G

bahagian bahagian: 237

Voltan - Zener (Nom) (Vz): 51V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 180 Ohms, Semasa - Kebocoran Terbalik @ Vr: 35.7mA @ 50mV, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 100mA,

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BZX79B43 A0G
Taiwan Semiconductor Corporation

BZX79B43 A0G

bahagian bahagian: 280

Voltan - Zener (Nom) (Vz): 43V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 150 Ohms, Semasa - Kebocoran Terbalik @ Vr: 30.1mA @ 50mV, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 100mA,

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BZX55B15 A0G
Taiwan Semiconductor Corporation

BZX55B15 A0G

bahagian bahagian: 233

Voltan - Zener (Nom) (Vz): 15V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 11V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZX55B3V6 A0G
Taiwan Semiconductor Corporation

BZX55B3V6 A0G

bahagian bahagian: 285

Voltan - Zener (Nom) (Vz): 3.6V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 85 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZX79B75 A0G
Taiwan Semiconductor Corporation

BZX79B75 A0G

bahagian bahagian: 260

Voltan - Zener (Nom) (Vz): 75V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 255 Ohms, Semasa - Kebocoran Terbalik @ Vr: 52.5mA @ 50mV, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 100mA,

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BZT52B9V1S RRG
Taiwan Semiconductor Corporation

BZT52B9V1S RRG

bahagian bahagian: 265

Voltan - Zener (Nom) (Vz): 9.1V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 450nA @ 6V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZX79B6V2 A0G
Taiwan Semiconductor Corporation

BZX79B6V2 A0G

bahagian bahagian: 291

Voltan - Zener (Nom) (Vz): 6.2V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 10 Ohms, Semasa - Kebocoran Terbalik @ Vr: 4mA @ 3V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 100mA,

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BZX79B7V5 A0G
Taiwan Semiconductor Corporation

BZX79B7V5 A0G

bahagian bahagian: 261

Voltan - Zener (Nom) (Vz): 7.5V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5mA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 100mA,

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BZX79B16 A0G
Taiwan Semiconductor Corporation

BZX79B16 A0G

bahagian bahagian: 225

Voltan - Zener (Nom) (Vz): 16V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 11.2mA @ 50mV, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 100mA,

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BZX79C18 A0G
Taiwan Semiconductor Corporation

BZX79C18 A0G

bahagian bahagian: 255

Voltan - Zener (Nom) (Vz): 18V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 45 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 12.6V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 100mA,

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BZX79B18 A0G
Taiwan Semiconductor Corporation

BZX79B18 A0G

bahagian bahagian: 206

Voltan - Zener (Nom) (Vz): 18V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 45 Ohms, Semasa - Kebocoran Terbalik @ Vr: 12.6mA @ 50mV, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 100mA,

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BZX79B33 A0G
Taiwan Semiconductor Corporation

BZX79B33 A0G

bahagian bahagian: 267

Voltan - Zener (Nom) (Vz): 33V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 23.1mA @ 50mV, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 100mA,

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BZX79B22 A0G
Taiwan Semiconductor Corporation

BZX79B22 A0G

bahagian bahagian: 246

Voltan - Zener (Nom) (Vz): 22V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 55 Ohms, Semasa - Kebocoran Terbalik @ Vr: 15.4mA @ 50mV, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 100mA,

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