Diod - Pembetulan - Bujang | Produk Semikonduktor Diskrit | 100

BA158GHR1G

bahagian bahagian: 127

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

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Taiwan Semiconductor Corporation

BA158G A0G

bahagian bahagian: 95

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

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Taiwan Semiconductor Corporation

BA157GHR1G

bahagian bahagian: 108

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

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Taiwan Semiconductor Corporation

BA157GHA0G

bahagian bahagian: 84

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

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Taiwan Semiconductor Corporation

BAT54CW RVG

bahagian bahagian: 146

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 200mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 5ns,

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Taiwan Semiconductor Corporation

BAT54W RVG

bahagian bahagian: 192

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 200mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 5ns,

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Taiwan Semiconductor Corporation

BAT54SW RVG

bahagian bahagian: 145

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 200mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 5ns,

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Taiwan Semiconductor Corporation

BAT54AW RVG

bahagian bahagian: 170

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 200mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 5ns,

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Taiwan Semiconductor Corporation

BA157G B0G

bahagian bahagian: 185

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

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Taiwan Semiconductor Corporation

BAT43X RKG

bahagian bahagian: 196

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 200mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 200mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 5ns,

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Taiwan Semiconductor Corporation

BYG23M M2G

bahagian bahagian: 148

Jenis Diod: Standard, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 1.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 65ns,

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Taiwan Semiconductor Corporation

BA158GHA0G

bahagian bahagian: 180

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

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Taiwan Semiconductor Corporation

BA159GHB0G

bahagian bahagian: 199

Jenis Diod: Standard, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 250ns,

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Taiwan Semiconductor Corporation

BA158GHB0G

bahagian bahagian: 111

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

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Taiwan Semiconductor Corporation

BA158G B0G

bahagian bahagian: 191

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

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Taiwan Semiconductor Corporation

BA159G R1G

bahagian bahagian: 138

Jenis Diod: Standard, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 250ns,

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Taiwan Semiconductor Corporation

BYG20J R3G

bahagian bahagian: 127

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 1.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

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Taiwan Semiconductor Corporation

BA159G B0G

bahagian bahagian: 197

Jenis Diod: Standard, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 250ns,

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Taiwan Semiconductor Corporation

BYG23M R3G

bahagian bahagian: 142

Jenis Diod: Standard, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 1.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 65ns,

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Taiwan Semiconductor Corporation

BYG21M M2G

bahagian bahagian: 109

Jenis Diod: Avalanche, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.6V @ 1.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 120ns,

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Taiwan Semiconductor Corporation

BA159GHR1G

bahagian bahagian: 115

Jenis Diod: Standard, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 250ns,

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Taiwan Semiconductor Corporation

BA157GHB0G

bahagian bahagian: 109

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

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Taiwan Semiconductor Corporation

BA159GHA0G

bahagian bahagian: 175

Jenis Diod: Standard, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 250ns,

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Taiwan Semiconductor Corporation

BAV103 L0G

bahagian bahagian: 251

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 250V, Semasa - Rata-rata Disahkan (Io): 200mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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Taiwan Semiconductor Corporation

BAV101 L0G

bahagian bahagian: 251

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 250V, Semasa - Rata-rata Disahkan (Io): 200mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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Taiwan Semiconductor Corporation

BAV21 A0G

bahagian bahagian: 203

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 250V, Semasa - Rata-rata Disahkan (Io): 200mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 200mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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Taiwan Semiconductor Corporation

BAV20 A0G

bahagian bahagian: 163

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 200mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 200mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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Taiwan Semiconductor Corporation

BAV101 L1G

bahagian bahagian: 217

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 250V, Semasa - Rata-rata Disahkan (Io): 200mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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Taiwan Semiconductor Corporation

BAV19 A0G

bahagian bahagian: 173

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 200mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 200mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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Taiwan Semiconductor Corporation

BAV103 L1G

bahagian bahagian: 215

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 250V, Semasa - Rata-rata Disahkan (Io): 200mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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Taiwan Semiconductor Corporation

BAS21W RVG

bahagian bahagian: 171

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 250V, Semasa - Rata-rata Disahkan (Io): 200mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 50ns,

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Taiwan Semiconductor Corporation

BAS21 RFG

bahagian bahagian: 263

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 250V, Semasa - Rata-rata Disahkan (Io): 200mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 200mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 50ns,

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Taiwan Semiconductor Corporation

BAS19 RFG

bahagian bahagian: 250

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 200mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 200mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 50ns,

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Taiwan Semiconductor Corporation

B0530WF RHG

bahagian bahagian: 195

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 500mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 500mV @ 500mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

BAV20W RHG

bahagian bahagian: 237

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 250V, Semasa - Rata-rata Disahkan (Io): 200mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 200mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 50ns,

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Taiwan Semiconductor Corporation

BAV19W-G RHG

bahagian bahagian: 216

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 200mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 200mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 50ns,

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