Diod - Pembetulan - Bujang

Rumah
Diod - Pembetulan - Bujang

Taiwan Semiconductor Corporation

ESH1D M2G

bahagian bahagian: 95

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 15ns,

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Taiwan Semiconductor Corporation

ES3F V7G

bahagian bahagian: 133

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 300V, Semasa - Rata-rata Disahkan (Io): 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

SK32B M4G

bahagian bahagian: 76

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 500mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

US1JHM2G

bahagian bahagian: 94

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

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Taiwan Semiconductor Corporation

RS2BA R3G

bahagian bahagian: 69

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

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Taiwan Semiconductor Corporation

S1DBHR5G

bahagian bahagian: 136

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SK115B R5G

bahagian bahagian: 101

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 950mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

ES1F M2G

bahagian bahagian: 74

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 300V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

MUR140SHM4G

bahagian bahagian: 95

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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Taiwan Semiconductor Corporation

MUR340SBHM4G

bahagian bahagian: 73

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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Taiwan Semiconductor Corporation

SK19BHR5G

bahagian bahagian: 90

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 90V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 850mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SSL14 M2G

bahagian bahagian: 73

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 390mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

RS1JHR3G

bahagian bahagian: 87

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 250ns,

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Taiwan Semiconductor Corporation

SS25HR5G

bahagian bahagian: 91

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

S4G V6G

bahagian bahagian: 77

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 4A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.5µs,

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Taiwan Semiconductor Corporation

SK56C V6G

bahagian bahagian: 97

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

HS1G M2G

bahagian bahagian: 50

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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Taiwan Semiconductor Corporation

SS12HM2G

bahagian bahagian: 71

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 500mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SS29HR5G

bahagian bahagian: 101

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 90V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 850mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

S3DB M4G

bahagian bahagian: 79

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 3A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.5µs,

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Taiwan Semiconductor Corporation

RS2B M4G

bahagian bahagian: 59

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

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Taiwan Semiconductor Corporation

HS3K V6G

bahagian bahagian: 139

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

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Taiwan Semiconductor Corporation

HS5M V6G

bahagian bahagian: 133

Jenis Diod: Standard, Semasa - Rata-rata Disahkan (Io): 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

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Taiwan Semiconductor Corporation

MUR140SHR5G

bahagian bahagian: 90

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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Taiwan Semiconductor Corporation

SK315B M4G

bahagian bahagian: 65

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 950mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

ES2GAHM2G

bahagian bahagian: 142

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

SK23AHM2G

bahagian bahagian: 71

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 500mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

RS2MAHM2G

bahagian bahagian: 120

Jenis Diod: Standard, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 500ns,

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Taiwan Semiconductor Corporation

ES2DA M2G

bahagian bahagian: 56

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 950mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

SK215A M2G

bahagian bahagian: 103

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 950mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

US1KHR3G

bahagian bahagian: 143

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

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Taiwan Semiconductor Corporation

SSL32 V6G

bahagian bahagian: 128

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SFF1603G C0G

bahagian bahagian: 66

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 16A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 975mV @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

ES1C M2G

bahagian bahagian: 124

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 950mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

HS2A R5G

bahagian bahagian: 54

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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Taiwan Semiconductor Corporation

ESH2BA M2G

bahagian bahagian: 93

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 25ns,

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3600

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