Diod - Pembetulan - Bujang | Produk Semikonduktor Diskrit | 100

SS12LSHRVG

bahagian bahagian: 111

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 450mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SFF503GHC0G

bahagian bahagian: 153

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 980mV @ 2.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

HERAF1006G C0G

bahagian bahagian: 81

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 80ns,

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Taiwan Semiconductor Corporation

MBRF5200HC0G

bahagian bahagian: 153

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.02V @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

MBR10150 C0G

bahagian bahagian: 93

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.05V @ 10A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

HERAF1003G C0G

bahagian bahagian: 81

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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Taiwan Semiconductor Corporation

SFS1002GHMNG

bahagian bahagian: 154

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 975mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

SFS1005G MNG

bahagian bahagian: 164

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 300V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

SFF1606GHC0G

bahagian bahagian: 141

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 16A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

SFAS801G MNG

bahagian bahagian: 86

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 950mV @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

SFAF1607G C0G

bahagian bahagian: 77

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 500V, Semasa - Rata-rata Disahkan (Io): 16A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 16A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

SFF506GHC0G

bahagian bahagian: 138

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 2.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

HERAF802G C0G

bahagian bahagian: 159

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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Taiwan Semiconductor Corporation

SFS1004GHMNG

bahagian bahagian: 152

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 975mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

SFAF506GHC0G

bahagian bahagian: 148

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

SFAS801GHMNG

bahagian bahagian: 148

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 950mV @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

SFA806G C0G

bahagian bahagian: 125

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

SFAF507G C0G

bahagian bahagian: 77

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 500V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

SFF1007GAHC0G

bahagian bahagian: 66

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 500V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

SFF1005G C0G

bahagian bahagian: 95

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 300V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

SFA1004G C0G

bahagian bahagian: 103

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 975mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

SFF1003GA C0G

bahagian bahagian: 68

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 975mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

SFF1003GHC0G

bahagian bahagian: 87

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 975mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

S1DFSHMXG

bahagian bahagian: 91

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

MBRF2090 C0G

bahagian bahagian: 101

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 90V, Semasa - Rata-rata Disahkan (Io): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 950mV @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SFF2005GHC0G

bahagian bahagian: 149

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 300V, Semasa - Rata-rata Disahkan (Io): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

SFS1008G MNG

bahagian bahagian: 111

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

RS1MFSHMXG

bahagian bahagian: 126

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 500ns,

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Taiwan Semiconductor Corporation

SFAF1608G C0G

bahagian bahagian: 71

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 16A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 16A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

MUR8L60 C0G

bahagian bahagian: 109

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 65ns,

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Taiwan Semiconductor Corporation

MURF8L60HC0G

bahagian bahagian: 80

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 65ns,

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Taiwan Semiconductor Corporation

SFF2007GHC0G

bahagian bahagian: 102

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 500V, Semasa - Rata-rata Disahkan (Io): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

SK15H45 B0G

bahagian bahagian: 122

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 560mV @ 15A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SS14LWHRVG

bahagian bahagian: 145

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

S1GFS MXG

bahagian bahagian: 162

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SFAF504GHC0G

bahagian bahagian: 98

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 975mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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