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Diod - Pembetulan - Bujang

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  • Diod - Pembetulan - Bujang
MUR4L20HA0G
Taiwan Semiconductor Corporation

MUR4L20HA0G

bahagian bahagian: 132

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 4A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 890mV @ 4A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 25ns,

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SR206 R0G
Taiwan Semiconductor Corporation

SR206 R0G

bahagian bahagian: 178

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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ES1FL RVG
Taiwan Semiconductor Corporation

ES1FL RVG

bahagian bahagian: 146

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 300V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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SS13L R3G
Taiwan Semiconductor Corporation

SS13L R3G

bahagian bahagian: 126

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 500mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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SS26L RVG
Taiwan Semiconductor Corporation

SS26L RVG

bahagian bahagian: 101

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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SR202 R0G
Taiwan Semiconductor Corporation

SR202 R0G

bahagian bahagian: 98

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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UF5JFC C0G
Taiwan Semiconductor Corporation

UF5JFC C0G

bahagian bahagian: 176

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.8V @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 25ns,

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RSFGLHR3G
Taiwan Semiconductor Corporation

RSFGLHR3G

bahagian bahagian: 103

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 500mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 500mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

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SS310LHR3G
Taiwan Semiconductor Corporation

SS310LHR3G

bahagian bahagian: 102

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 850mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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RSFDL RUG
Taiwan Semiconductor Corporation

RSFDL RUG

bahagian bahagian: 167

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 500mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 500mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

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LL4003G L0
Taiwan Semiconductor Corporation

LL4003G L0

bahagian bahagian: 129

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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S1ML RUG
Taiwan Semiconductor Corporation

S1ML RUG

bahagian bahagian: 135

Jenis Diod: Standard, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.8µs,

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S1MLHM2G
Taiwan Semiconductor Corporation

S1MLHM2G

bahagian bahagian: 99

Jenis Diod: Standard, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.8µs,

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UG2D B0G
Taiwan Semiconductor Corporation

UG2D B0G

bahagian bahagian: 174

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 950mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 25ns,

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SS310L R3G
Taiwan Semiconductor Corporation

SS310L R3G

bahagian bahagian: 154

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 850mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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S1KLHR3G
Taiwan Semiconductor Corporation

S1KLHR3G

bahagian bahagian: 100

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.8µs,

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SS14L RFG
Taiwan Semiconductor Corporation

SS14L RFG

bahagian bahagian: 103

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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SS25LHR3G
Taiwan Semiconductor Corporation

SS25LHR3G

bahagian bahagian: 175

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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SS210LHRUG
Taiwan Semiconductor Corporation

SS210LHRUG

bahagian bahagian: 182

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 850mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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ES1AL RVG
Taiwan Semiconductor Corporation

ES1AL RVG

bahagian bahagian: 136

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 950mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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RSFDLHR3G
Taiwan Semiconductor Corporation

RSFDLHR3G

bahagian bahagian: 126

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 500mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 500mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

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SR203 R0G
Taiwan Semiconductor Corporation

SR203 R0G

bahagian bahagian: 93

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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RS1BLHR3G
Taiwan Semiconductor Corporation

RS1BLHR3G

bahagian bahagian: 145

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 800mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 800mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

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HS1FL R3G
Taiwan Semiconductor Corporation

HS1FL R3G

bahagian bahagian: 108

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 300V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 950mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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SS15L RUG
Taiwan Semiconductor Corporation

SS15L RUG

bahagian bahagian: 186

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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SS36L RVG
Taiwan Semiconductor Corporation

SS36L RVG

bahagian bahagian: 91

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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UG54G B0G
Taiwan Semiconductor Corporation

UG54G B0G

bahagian bahagian: 154

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.05V @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 20ns,

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SS16LHR3G
Taiwan Semiconductor Corporation

SS16LHR3G

bahagian bahagian: 93

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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UG2DHA0G
Taiwan Semiconductor Corporation

UG2DHA0G

bahagian bahagian: 116

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 950mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 25ns,

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SS19L R3G
Taiwan Semiconductor Corporation

SS19L R3G

bahagian bahagian: 123

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 90V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 800mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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S1JLHRVG
Taiwan Semiconductor Corporation

S1JLHRVG

bahagian bahagian: 159

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.8µs,

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HS1GL R3G
Taiwan Semiconductor Corporation

HS1GL R3G

bahagian bahagian: 99

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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S1BLHM2G
Taiwan Semiconductor Corporation

S1BLHM2G

bahagian bahagian: 141

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.8µs,

Senarai harapan
RS1BL RUG
Taiwan Semiconductor Corporation

RS1BL RUG

bahagian bahagian: 119

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 800mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 800mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

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SS15L RVG
Taiwan Semiconductor Corporation

SS15L RVG

bahagian bahagian: 93

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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SS115L R3G
Taiwan Semiconductor Corporation

SS115L R3G

bahagian bahagian: 162

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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