Diod - Pembetulan - Bujang

Rumah
Diod - Pembetulan - Bujang

Taiwan Semiconductor Corporation

SF68GHR0G

bahagian bahagian: 116

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 6A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 6A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

TSS43U RGG

bahagian bahagian: 172

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 200mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 450mV @ 15mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 5ns,

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Taiwan Semiconductor Corporation

TSS54U RGG

bahagian bahagian: 145

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 200mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 5ns,

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Taiwan Semiconductor Corporation

S15JC M6G

bahagian bahagian: 165

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 15A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

TSN520M60 S4G

bahagian bahagian: 204

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 580mV @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

TSP15H200S S1G

bahagian bahagian: 159

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 890mV @ 15A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

ES1LGHM2G

bahagian bahagian: 181

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

TSN525M60 S4G

bahagian bahagian: 146

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 25A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 630mV @ 25A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

TSS0230U RGG

bahagian bahagian: 162

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 35V, Semasa - Rata-rata Disahkan (Io): 200mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 600mV @ 200mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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Taiwan Semiconductor Corporation

S15KC M6G

bahagian bahagian: 221

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 15A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

S15GC M6G

bahagian bahagian: 158

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 15A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

TSS40U RGG

bahagian bahagian: 193

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 200mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 40mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 5ns,

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Taiwan Semiconductor Corporation

S15MC M6G

bahagian bahagian: 137

Jenis Diod: Standard, Semasa - Rata-rata Disahkan (Io): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 15A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

TSSW3U45 RVG

bahagian bahagian: 218

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 470mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

TSSA3U60 M2G

bahagian bahagian: 146

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 540mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 25ns,

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Taiwan Semiconductor Corporation

ES3JB M4G

bahagian bahagian: 154

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.45V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

TSSE3U60 RVG

bahagian bahagian: 168

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 580mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

TSSW3U45HRVG

bahagian bahagian: 140

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 470mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

MUR315S V7G

bahagian bahagian: 116

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 25ns,

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Taiwan Semiconductor Corporation

TSS83L45 MXG

bahagian bahagian: 201

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 560mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

ES1LG M2G

bahagian bahagian: 170

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

TSN520M60 S3G

bahagian bahagian: 161

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 580mV @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

ES1LJ M2G

bahagian bahagian: 174

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

TSS0340U RGG

bahagian bahagian: 173

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io): 30mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 370mV @ 1mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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Taiwan Semiconductor Corporation

TSS0230LU RGG

bahagian bahagian: 167

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 35V, Semasa - Rata-rata Disahkan (Io): 200mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 500mV @ 200mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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Taiwan Semiconductor Corporation

UGF5JHC0G

bahagian bahagian: 127

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 3V @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 25ns,

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Taiwan Semiconductor Corporation

UGF8JDHC0G

bahagian bahagian: 196

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.3V @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 30ns,

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Taiwan Semiconductor Corporation

TSP15U120S S1G

bahagian bahagian: 122

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 120V, Semasa - Rata-rata Disahkan (Io): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 15A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

ES1LG R3G

bahagian bahagian: 185

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

TSSA3U45 M2G

bahagian bahagian: 164

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 480mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

ES1LJ R3G

bahagian bahagian: 195

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

ES1LJHM2G

bahagian bahagian: 136

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Taiwan Semiconductor Corporation

UGF12J C0G

bahagian bahagian: 166

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 12A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2V @ 12A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 20ns,

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Taiwan Semiconductor Corporation

RSFALHMTG

bahagian bahagian: 184

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 500mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 500mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

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Taiwan Semiconductor Corporation

SS210L MQG

bahagian bahagian: 209

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 850mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SS22LHMHG

bahagian bahagian: 154

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 500mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan

3600

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