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BQ4010YMA-150N
Texas Instruments

BQ4010YMA-150N

bahagian bahagian: 439

Jenis Ingatan: Non-Volatile, Format Memori: NVSRAM, Teknologi: NVSRAM (Non-Volatile SRAM), Saiz Ingatan: 64Kb (8K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 150ns,

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BQ4010YMA-150
Texas Instruments

BQ4010YMA-150

bahagian bahagian: 457

Jenis Ingatan: Non-Volatile, Format Memori: NVSRAM, Teknologi: NVSRAM (Non-Volatile SRAM), Saiz Ingatan: 64Kb (8K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 150ns,

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BQ4010MA-200
Texas Instruments

BQ4010MA-200

bahagian bahagian: 55

Jenis Ingatan: Non-Volatile, Format Memori: NVSRAM, Teknologi: NVSRAM (Non-Volatile SRAM), Saiz Ingatan: 64Kb (8K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 200ns,

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BQ4010MA-70
Texas Instruments

BQ4010MA-70

bahagian bahagian: 442

Jenis Ingatan: Non-Volatile, Format Memori: NVSRAM, Teknologi: NVSRAM (Non-Volatile SRAM), Saiz Ingatan: 64Kb (8K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 70ns,

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BQ4010MA-150
Texas Instruments

BQ4010MA-150

bahagian bahagian: 453

Jenis Ingatan: Non-Volatile, Format Memori: NVSRAM, Teknologi: NVSRAM (Non-Volatile SRAM), Saiz Ingatan: 64Kb (8K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 150ns,

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BQ2022DBZRG4
Texas Instruments

BQ2022DBZRG4

bahagian bahagian: 439

Jenis Ingatan: Non-Volatile, Format Memori: EPROM, Teknologi: EPROM - OTP, Saiz Ingatan: 1Kb (256b x 4 pages),

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BQ4015LYMA-70N
Texas Instruments

BQ4015LYMA-70N

bahagian bahagian: 10019

Jenis Ingatan: Non-Volatile, Format Memori: NVSRAM, Teknologi: NVSRAM (Non-Volatile SRAM), Saiz Ingatan: 4Mb (512K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 70ns,

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BQ4015YMA-85
Texas Instruments

BQ4015YMA-85

bahagian bahagian: 169

Jenis Ingatan: Non-Volatile, Format Memori: NVSRAM, Teknologi: NVSRAM (Non-Volatile SRAM), Saiz Ingatan: 4Mb (512K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 85ns,

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BQ2026DBZR
Texas Instruments

BQ2026DBZR

bahagian bahagian: 197320

Jenis Ingatan: Non-Volatile, Format Memori: EPROM, Teknologi: EPROM - OTP, Saiz Ingatan: 1.5K (6 pages x 32 bytes),

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BQ2026LPR
Texas Instruments

BQ2026LPR

bahagian bahagian: 197243

Jenis Ingatan: Non-Volatile, Format Memori: EPROM, Teknologi: EPROM - OTP, Saiz Ingatan: 1.5K (6 pages x 32 bytes),

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BQ2024DBZR
Texas Instruments

BQ2024DBZR

bahagian bahagian: 183140

Jenis Ingatan: Non-Volatile, Format Memori: EPROM, Teknologi: EPROM - OTP, Saiz Ingatan: 1.5K (6 pages x 32 bytes),

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BQ2024DBZRG4
Texas Instruments

BQ2024DBZRG4

bahagian bahagian: 183097

Jenis Ingatan: Non-Volatile, Format Memori: EPROM, Teknologi: EPROM - OTP, Saiz Ingatan: 1.5K (6 pages x 32 bytes),

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BQ2022ALPR
Texas Instruments

BQ2022ALPR

bahagian bahagian: 195355

Jenis Ingatan: Non-Volatile, Format Memori: EPROM, Teknologi: EPROM - OTP, Saiz Ingatan: 1Kb (256b x 4 pages),

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BQ2022ADBZRG4
Texas Instruments

BQ2022ADBZRG4

bahagian bahagian: 195381

Jenis Ingatan: Non-Volatile, Format Memori: EPROM, Teknologi: EPROM - OTP, Saiz Ingatan: 1Kb (256b x 4 pages),

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BQ2022ADBZR
Texas Instruments

BQ2022ADBZR

bahagian bahagian: 195381

Jenis Ingatan: Non-Volatile, Format Memori: EPROM, Teknologi: EPROM - OTP, Saiz Ingatan: 1Kb (256b x 4 pages),

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SM28VLT32SKGD3
Texas Instruments

SM28VLT32SKGD3

bahagian bahagian: 188

Jenis Ingatan: Non-Volatile, Format Memori: FLASH, Teknologi: FLASH, Saiz Ingatan: 32Mb (2M x 16), Kekerapan Jam: 12MHz,

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SM28VLT32SHKN
Texas Instruments

SM28VLT32SHKN

bahagian bahagian: 183

Jenis Ingatan: Non-Volatile, Format Memori: FLASH, Teknologi: FLASH, Saiz Ingatan: 32Mb (2M x 16), Kekerapan Jam: 12MHz,

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SMV512K32HFG
Texas Instruments

SMV512K32HFG

bahagian bahagian: 795

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM, Saiz Ingatan: 16Mb (512K x 32), Tulis Masa Kitaran - Perkataan, Halaman: 20ns,

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