Transistor - FET, MOSFET - Bujang

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Transistor - FET, MOSFET - Bujang

TPH3202PD

bahagian bahagian: 7016

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 350 mOhm @ 5.5A, 8V,

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TPH3205WSB

bahagian bahagian: 3254

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 36A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 60 mOhm @ 22A, 8V,

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TPH3208PD

bahagian bahagian: 986

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 130 mOhm @ 13A, 8V,

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TPH3207WS

bahagian bahagian: 2351

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 50A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 41 mOhm @ 32A, 8V,

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TPH3206LS

bahagian bahagian: 6040

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 17A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 180 mOhm @ 11A, 8V,

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TPH3208LS

bahagian bahagian: 5664

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 130 mOhm @ 13A, 8V,

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TPH3208PS

bahagian bahagian: 6263

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 130 mOhm @ 13A, 8V,

Senarai harapan

TPH3206PD

bahagian bahagian: 5709

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 17A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 180 mOhm @ 11A, 8V,

Senarai harapan

TPH3206PS

bahagian bahagian: 6777

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 17A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 180 mOhm @ 11A, 8V,

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TP65H035WS

bahagian bahagian: 2828

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 46.5A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 12V, Rds On (Maks) @ Id, Vgs: 41 mOhm @ 30A, 10V,

Senarai harapan

TPH3208LDG

bahagian bahagian: 5597

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 130 mOhm @ 13A, 8V,

Senarai harapan

TPH3206LDGB

bahagian bahagian: 6072

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 180 mOhm @ 11A, 8V,

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TP65H050WS

bahagian bahagian: 1890

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 34A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 12V, Rds On (Maks) @ Id, Vgs: 60 mOhm @ 22A, 10V,

Senarai harapan

TPH3206LD

bahagian bahagian: 6066

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 17A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 180 mOhm @ 11A, 8V,

Senarai harapan

TPH3208LSG

bahagian bahagian: 1701

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 130 mOhm @ 14A, 8V,

Senarai harapan

TPH3205WSBQA

bahagian bahagian: 2970

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 35A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 62 mOhm @ 22A, 8V,

Senarai harapan

TPH3206PSB

bahagian bahagian: 6741

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 180 mOhm @ 10A, 8V,

Senarai harapan

TP90H180PS

bahagian bahagian: 2997

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 900V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 205 mOhm @ 10A, 10V,

Senarai harapan

TPH3206LSB

bahagian bahagian: 6120

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 180 mOhm @ 10A, 8V,

Senarai harapan

TPH3212PS

bahagian bahagian: 4430

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 27A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 72 mOhm @ 17A, 8V,

Senarai harapan

TPH3202LD

bahagian bahagian: 6662

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 350 mOhm @ 5.5A, 8V,

Senarai harapan

TPH3202LS

bahagian bahagian: 6623

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 350 mOhm @ 5.5A, 8V,

Senarai harapan

TPH3208LD

bahagian bahagian: 5648

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 130 mOhm @ 13A, 8V,

Senarai harapan

TPH3202PS

bahagian bahagian: 7016

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 350 mOhm @ 5.5A, 8V,

Senarai harapan

TPH3206LDB

bahagian bahagian: 6074

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 180 mOhm @ 10A, 8V,

Senarai harapan

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