Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 70A (Tc), Rds On (Maks) @ Id, Vgs: 34 mOhm @ 30A, 8V,
