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Transistor - FET, MOSFET - Bujang

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  • Transistor - FET, MOSFET - Bujang
SIS110DN-T1-GE3
Vishay Siliconix

SIS110DN-T1-GE3

bahagian bahagian: 212

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.2A (Ta), 14.2A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 7.5V, 10V, Rds On (Maks) @ Id, Vgs: 54 mOhm @ 4A, 10V,

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SIDR140DP-T1-GE3
Vishay Siliconix

SIDR140DP-T1-GE3

bahagian bahagian: 270

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 79A (Ta), 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 0.67 mOhm @ 20A, 10V,

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SIRA80DP-T1-RE3
Vishay Siliconix

SIRA80DP-T1-RE3

bahagian bahagian: 291

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 0.62 mOhm @ 20A, 10V,

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SI7155DP-T1-GE3
Vishay Siliconix

SI7155DP-T1-GE3

bahagian bahagian: 220

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 31A (Ta), 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3.6 mOhm @ 20A, 10V,

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SI8401DB-T1-E1
Vishay Siliconix

SI8401DB-T1-E1

bahagian bahagian: 139882

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.6A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 65 mOhm @ 1A, 4.5V,

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SIR626DP-T1-RE3
Vishay Siliconix

SIR626DP-T1-RE3

bahagian bahagian: 81219

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 1.7 mOhm @ 20A, 10V,

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SIR167DP-T1-GE3
Vishay Siliconix

SIR167DP-T1-GE3

bahagian bahagian: 225

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 5.5 mOhm @ 15A, 10V,

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SIA413ADJ-T1-GE3
Vishay Siliconix

SIA413ADJ-T1-GE3

bahagian bahagian: 219

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 6.7A, 4.5V,

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SIS106DN-T1-GE3
Vishay Siliconix

SIS106DN-T1-GE3

bahagian bahagian: 264

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.8A (Ta), 16A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 7.5V, 10V, Rds On (Maks) @ Id, Vgs: 18.5 mOhm @ 4A, 10V,

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SI7137DP-T1-GE3
Vishay Siliconix

SI7137DP-T1-GE3

bahagian bahagian: 66464

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 10V, Rds On (Maks) @ Id, Vgs: 1.95 mOhm @ 25A, 10V,

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SI4408DY-T1-GE3
Vishay Siliconix

SI4408DY-T1-GE3

bahagian bahagian: 41762

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 14A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 4.5 mOhm @ 21A, 10V,

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SI4423DY-T1-GE3
Vishay Siliconix

SI4423DY-T1-GE3

bahagian bahagian: 57367

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 7.5 mOhm @ 14A, 4.5V,

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SISS42DN-T1-GE3
Vishay Siliconix

SISS42DN-T1-GE3

bahagian bahagian: 256

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11.8A (Ta), 40.5A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 7.5V, 10V, Rds On (Maks) @ Id, Vgs: 14.4 mOhm @ 15A, 10V,

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SI4431BDY-T1-GE3
Vishay Siliconix

SI4431BDY-T1-GE3

bahagian bahagian: 148689

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.7A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 7.5A, 10V,

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SIB417EDK-T1-GE3
Vishay Siliconix

SIB417EDK-T1-GE3

bahagian bahagian: 176135

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.2V, 4.5V, Rds On (Maks) @ Id, Vgs: 58 mOhm @ 5.8A, 4.5V,

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SI4866DY-T1-GE3
Vishay Siliconix

SI4866DY-T1-GE3

bahagian bahagian: 69518

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 5.5 mOhm @ 17A, 4.5V,

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SIDR392DP-T1-GE3
Vishay Siliconix

SIDR392DP-T1-GE3

bahagian bahagian: 257

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 82A (Ta), 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 0.62 mOhm @ 20A, 10V,

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SI4862DY-T1-E3
Vishay Siliconix

SI4862DY-T1-E3

bahagian bahagian: 41807

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 16V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 17A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 3.3 mOhm @ 25A, 4.5V,

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SI7454DP-T1-GE3
Vishay Siliconix

SI7454DP-T1-GE3

bahagian bahagian: 64945

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 34 mOhm @ 7.8A, 10V,

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SIA110DJ-T1-GE3
Vishay Siliconix

SIA110DJ-T1-GE3

bahagian bahagian: 258

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.4A (Ta), 12A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 7.5V, 10V, Rds On (Maks) @ Id, Vgs: 55 mOhm @ 4A, 10V,

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SI8401DB-T1-E3
Vishay Siliconix

SI8401DB-T1-E3

bahagian bahagian: 66637

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.6A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 65 mOhm @ 1A, 4.5V,

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SI4436DY-T1-GE3
Vishay Siliconix

SI4436DY-T1-GE3

bahagian bahagian: 176138

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 36 mOhm @ 4.6A, 10V,

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SI4864DY-T1-E3
Vishay Siliconix

SI4864DY-T1-E3

bahagian bahagian: 32930

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 17A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 3.5 mOhm @ 25A, 4.5V,

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SI7862ADP-T1-E3
Vishay Siliconix

SI7862ADP-T1-E3

bahagian bahagian: 30529

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 16V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 18A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 3 mOhm @ 29A, 4.5V,

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SI7423DN-T1-E3
Vishay Siliconix

SI7423DN-T1-E3

bahagian bahagian: 103399

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.4A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 11.7A, 10V,

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SI4864DY-T1-GE3
Vishay Siliconix

SI4864DY-T1-GE3

bahagian bahagian: 32968

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 17A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 3.5 mOhm @ 25A, 4.5V,

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SISS27ADN-T1-GE3
Vishay Siliconix

SISS27ADN-T1-GE3

bahagian bahagian: 192126

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 50A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 5.1 mOhm @ 15A, 10V,

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SISH129DN-T1-GE3
Vishay Siliconix

SISH129DN-T1-GE3

bahagian bahagian: 261

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 14.4A (Ta), 35A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 11.4 mOhm @ 14.4A, 10V,

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SI7804DN-T1-GE3
Vishay Siliconix

SI7804DN-T1-GE3

bahagian bahagian: 132089

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 18.5 mOhm @ 10A, 10V,

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SI4413DDY-T1-GE3
Vishay Siliconix

SI4413DDY-T1-GE3

bahagian bahagian: 225

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 5.5 mOhm @ 10A, 10V,

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SI1022R-T1-GE3
Vishay Siliconix

SI1022R-T1-GE3

bahagian bahagian: 149176

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 330mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 1.25 Ohm @ 500mA, 10V,

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SI4413ADY-T1-GE3
Vishay Siliconix

SI4413ADY-T1-GE3

bahagian bahagian: 57351

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 7.5 mOhm @ 13A, 10V,

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SI7326DN-T1-E3
Vishay Siliconix

SI7326DN-T1-E3

bahagian bahagian: 199704

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 19.5 mOhm @ 10A, 10V,

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SIA106DJ-T1-GE3
Vishay Siliconix

SIA106DJ-T1-GE3

bahagian bahagian: 209

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A (Ta), 12A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 7.5V, 10V, Rds On (Maks) @ Id, Vgs: 18.5 mOhm @ 4A, 10V,

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SI3460BDV-T1-GE3
Vishay Siliconix

SI3460BDV-T1-GE3

bahagian bahagian: 199675

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 27 mOhm @ 5.1A, 4.5V,

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SI4442DY-T1-E3
Vishay Siliconix

SI4442DY-T1-E3

bahagian bahagian: 44342

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 10V, Rds On (Maks) @ Id, Vgs: 4.5 mOhm @ 22A, 10V,

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