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Transistor - IGBT - Modul

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  • Transistor - IGBT - Modul
50MT060ULS
Vishay Semiconductor Diodes Division

50MT060ULS

bahagian bahagian: 371

Konfigurasi: Single, Voltan - Pemecahan Pemancar Pemungut (Maks): 600V, Semasa - Pemungut (Ic) (Maks): 100A, Kuasa - Maks: 445W, Vce (aktif) (Maks) @ Vge, Ic: 2.55V @ 15V, 100A,

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50MT060WH
Vishay Semiconductor Diodes Division

50MT060WH

bahagian bahagian: 3045

Jenis IGBT: PT, Konfigurasi: Half Bridge, Voltan - Pemecahan Pemancar Pemungut (Maks): 600V, Semasa - Pemungut (Ic) (Maks): 114A, Kuasa - Maks: 658W, Vce (aktif) (Maks) @ Vge, Ic: 3.2V @ 15V, 100A,

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VS-GB200TH120N
Vishay Semiconductor Diodes Division

VS-GB200TH120N

bahagian bahagian: 241

Konfigurasi: Half Bridge, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 360A, Kuasa - Maks: 1136W, Vce (aktif) (Maks) @ Vge, Ic: 2.35V @ 15V, 200A,

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VS-GB100TH120N
Vishay Semiconductor Diodes Division

VS-GB100TH120N

bahagian bahagian: 318

Konfigurasi: Half Bridge, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 200A, Kuasa - Maks: 833W, Vce (aktif) (Maks) @ Vge, Ic: 2.35V @ 15V, 100A,

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VS-GB200TH120U
Vishay Semiconductor Diodes Division

VS-GB200TH120U

bahagian bahagian: 226

Konfigurasi: Half Bridge, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 330A, Kuasa - Maks: 1316W, Vce (aktif) (Maks) @ Vge, Ic: 3.6V @ 15V, 200A,

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VS-GB100NH120N
Vishay Semiconductor Diodes Division

VS-GB100NH120N

bahagian bahagian: 352

Konfigurasi: Single, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 200A, Kuasa - Maks: 833W, Vce (aktif) (Maks) @ Vge, Ic: 2.35V @ 15V, 100A,

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VS-GB75TP120U
Vishay Semiconductor Diodes Division

VS-GB75TP120U

bahagian bahagian: 963

Konfigurasi: Half Bridge, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 105A, Kuasa - Maks: 500W, Vce (aktif) (Maks) @ Vge, Ic: 3.2V @ 15V, 75A (Typ),

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VS-ETF150Y65U
Vishay Semiconductor Diodes Division

VS-ETF150Y65U

bahagian bahagian: 880

Jenis IGBT: Trench, Konfigurasi: Three Level Inverter, Voltan - Pemecahan Pemancar Pemungut (Maks): 650V, Semasa - Pemungut (Ic) (Maks): 142A, Kuasa - Maks: 417W, Vce (aktif) (Maks) @ Vge, Ic: 2.06V @ 15V, 100A,

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VS-GA200TH60S
Vishay Semiconductor Diodes Division

VS-GA200TH60S

bahagian bahagian: 280

Konfigurasi: Half Bridge, Voltan - Pemecahan Pemancar Pemungut (Maks): 600V, Semasa - Pemungut (Ic) (Maks): 260A, Kuasa - Maks: 1042W, Vce (aktif) (Maks) @ Vge, Ic: 1.9V @ 15V, 200A (Typ),

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CPV363M4K
Vishay Semiconductor Diodes Division

CPV363M4K

bahagian bahagian: 1862

Konfigurasi: Three Phase Inverter, Voltan - Pemecahan Pemancar Pemungut (Maks): 600V, Semasa - Pemungut (Ic) (Maks): 11A, Kuasa - Maks: 36W, Vce (aktif) (Maks) @ Vge, Ic: 2V @ 15V, 11A,

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VS-GT400TH60N
Vishay Semiconductor Diodes Division

VS-GT400TH60N

bahagian bahagian: 181

Jenis IGBT: Trench, Konfigurasi: Half Bridge, Voltan - Pemecahan Pemancar Pemungut (Maks): 600V, Semasa - Pemungut (Ic) (Maks): 530A, Kuasa - Maks: 1600W, Vce (aktif) (Maks) @ Vge, Ic: 2.05V @ 15V, 400A,

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VS-GB50TP120N
Vishay Semiconductor Diodes Division

VS-GB50TP120N

bahagian bahagian: 1128

Konfigurasi: Half Bridge, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 100A, Kuasa - Maks: 446W, Vce (aktif) (Maks) @ Vge, Ic: 2.15V @ 15V, 50A,

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VS-GB15XP120KTPBF
Vishay Semiconductor Diodes Division

VS-GB15XP120KTPBF

bahagian bahagian: 1583

Jenis IGBT: NPT, Konfigurasi: Three Phase Inverter, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 30A, Kuasa - Maks: 187W, Vce (aktif) (Maks) @ Vge, Ic: 3.66V @ 15V, 30A,

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VS-GB400AH120U
Vishay Semiconductor Diodes Division

VS-GB400AH120U

bahagian bahagian: 463

Konfigurasi: Single, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 550A, Kuasa - Maks: 2841W, Vce (aktif) (Maks) @ Vge, Ic: 3.6V @ 15V, 400A,

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VS-ETL015Y120H
Vishay Semiconductor Diodes Division

VS-ETL015Y120H

bahagian bahagian: 968

Jenis IGBT: Trench, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 22A, Kuasa - Maks: 89W, Vce (aktif) (Maks) @ Vge, Ic: 3.03V @ 15V, 15A,

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VS-20MT120UFP
Vishay Semiconductor Diodes Division

VS-20MT120UFP

bahagian bahagian: 1375

Jenis IGBT: NPT, Konfigurasi: Full Bridge Inverter, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 40A, Kuasa - Maks: 240W, Vce (aktif) (Maks) @ Vge, Ic: 4.66V @ 15V, 40A,

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VS-GB400TH120N
Vishay Semiconductor Diodes Division

VS-GB400TH120N

bahagian bahagian: 369

Konfigurasi: Half Bridge, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 800A, Kuasa - Maks: 2604W, Vce (aktif) (Maks) @ Vge, Ic: 1.9V @ 15V, 400A (Typ),

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VS-ENQ030L120S
Vishay Semiconductor Diodes Division

VS-ENQ030L120S

bahagian bahagian: 704

Jenis IGBT: Trench, Konfigurasi: Three Level Inverter, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 61A, Kuasa - Maks: 216W, Vce (aktif) (Maks) @ Vge, Ic: 2.52V @ 15V, 30A,

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VS-GB100TP120N
Vishay Semiconductor Diodes Division

VS-GB100TP120N

bahagian bahagian: 844

Konfigurasi: Half Bridge, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 200A, Kuasa - Maks: 650W, Vce (aktif) (Maks) @ Vge, Ic: 2.2V @ 15V, 100A,

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VS-GA300TD60S
Vishay Semiconductor Diodes Division

VS-GA300TD60S

bahagian bahagian: 525

Konfigurasi: Half Bridge, Voltan - Pemecahan Pemancar Pemungut (Maks): 600V, Semasa - Pemungut (Ic) (Maks): 530A, Kuasa - Maks: 1136W, Vce (aktif) (Maks) @ Vge, Ic: 1.45V @ 15V, 300A,

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VS-GB300NH120N
Vishay Semiconductor Diodes Division

VS-GB300NH120N

bahagian bahagian: 475

Konfigurasi: Single, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 500A, Kuasa - Maks: 1645W, Vce (aktif) (Maks) @ Vge, Ic: 2.45V @ 15V, 300A,

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VS-GB100LP120N
Vishay Semiconductor Diodes Division

VS-GB100LP120N

bahagian bahagian: 1012

Konfigurasi: Single, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 200A, Kuasa - Maks: 658W, Vce (aktif) (Maks) @ Vge, Ic: 1.8V @ 15V, 100A (Typ),

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VS-GB150LH120N
Vishay Semiconductor Diodes Division

VS-GB150LH120N

bahagian bahagian: 713

Konfigurasi: Single, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 300A, Kuasa - Maks: 1389W, Vce (aktif) (Maks) @ Vge, Ic: 1.87V @ 15V, 150A (Typ),

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VS-GT300YH120N
Vishay Semiconductor Diodes Division

VS-GT300YH120N

bahagian bahagian: 483

Jenis IGBT: Trench, Konfigurasi: Half Bridge, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 341A, Kuasa - Maks: 1042W, Vce (aktif) (Maks) @ Vge, Ic: 2.17V @ 15V, 300A (Typ),

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VS-GB150YG120NT
Vishay Semiconductor Diodes Division

VS-GB150YG120NT

bahagian bahagian: 756

Jenis IGBT: NPT, Konfigurasi: Full Bridge, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 182A, Kuasa - Maks: 892W, Vce (aktif) (Maks) @ Vge, Ic: 4V @ 15V, 200A,

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VS-70MT060WHTAPBF
Vishay Semiconductor Diodes Division

VS-70MT060WHTAPBF

bahagian bahagian: 1353

Jenis IGBT: NPT, Konfigurasi: Half Bridge, Voltan - Pemecahan Pemancar Pemungut (Maks): 600V, Semasa - Pemungut (Ic) (Maks): 100A, Kuasa - Maks: 347W, Vce (aktif) (Maks) @ Vge, Ic: 3.4V @ 15V, 140A,

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VS-GB90SA120U
Vishay Semiconductor Diodes Division

VS-GB90SA120U

bahagian bahagian: 973

Jenis IGBT: NPT, Konfigurasi: Single, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 149A, Kuasa - Maks: 862W, Vce (aktif) (Maks) @ Vge, Ic: 3.9V @ 15V, 75A,

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VS-ETF075Y60U
Vishay Semiconductor Diodes Division

VS-ETF075Y60U

bahagian bahagian: 825

Jenis IGBT: Trench, Konfigurasi: Three Level Inverter, Voltan - Pemecahan Pemancar Pemungut (Maks): 600V, Semasa - Pemungut (Ic) (Maks): 109A, Kuasa - Maks: 294W, Vce (aktif) (Maks) @ Vge, Ic: 1.93V @ 15V, 75A,

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VS-GT50TP60N
Vishay Semiconductor Diodes Division

VS-GT50TP60N

bahagian bahagian: 555

Jenis IGBT: Trench, Konfigurasi: Half Bridge, Voltan - Pemecahan Pemancar Pemungut (Maks): 600V, Semasa - Pemungut (Ic) (Maks): 85A, Kuasa - Maks: 208W, Vce (aktif) (Maks) @ Vge, Ic: 2.1V @ 15V, 50A,

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VS-GB600AH120N
Vishay Semiconductor Diodes Division

VS-GB600AH120N

bahagian bahagian: 352

Konfigurasi: Single, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 910A, Kuasa - Maks: 3125W, Vce (aktif) (Maks) @ Vge, Ic: 1.9V @ 15V, 600A (Typ),

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VS-40MT120UHTAPBF
Vishay Semiconductor Diodes Division

VS-40MT120UHTAPBF

bahagian bahagian: 894

Jenis IGBT: NPT, Konfigurasi: Half Bridge, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 80A, Kuasa - Maks: 463W, Vce (aktif) (Maks) @ Vge, Ic: 4.91V @ 15V, 80A,

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VS-GB100YG120NT
Vishay Semiconductor Diodes Division

VS-GB100YG120NT

bahagian bahagian: 804

Jenis IGBT: NPT, Konfigurasi: Full Bridge, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 127A, Kuasa - Maks: 625W, Vce (aktif) (Maks) @ Vge, Ic: 4V @ 15V, 100A,

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VS-GB200LH120N
Vishay Semiconductor Diodes Division

VS-GB200LH120N

bahagian bahagian: 292

Konfigurasi: Single, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 370A, Kuasa - Maks: 1562W, Vce (aktif) (Maks) @ Vge, Ic: 2.07V @ 15V, 200A (Typ),

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CPV362M4U
Vishay Semiconductor Diodes Division

CPV362M4U

bahagian bahagian: 2219

Konfigurasi: Three Phase Inverter, Voltan - Pemecahan Pemancar Pemungut (Maks): 600V, Semasa - Pemungut (Ic) (Maks): 7.2A, Kuasa - Maks: 23W, Vce (aktif) (Maks) @ Vge, Ic: 1.95V @ 15V, 7.2A,

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VS-GB300TH120U
Vishay Semiconductor Diodes Division

VS-GB300TH120U

bahagian bahagian: 176

Konfigurasi: Half Bridge, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 530A, Kuasa - Maks: 2119W, Vce (aktif) (Maks) @ Vge, Ic: 3.6V @ 15V, 300A,

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VS-GB100TH120U
Vishay Semiconductor Diodes Division

VS-GB100TH120U

bahagian bahagian: 269

Jenis IGBT: NPT, Konfigurasi: Half Bridge, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 200A, Kuasa - Maks: 1136W, Vce (aktif) (Maks) @ Vge, Ic: 3.6V @ 15V, 100A,

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