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Transistor - FET, MOSFET - Bujang

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  • Transistor - FET, MOSFET - Bujang
SI1428EDH-T1-GE3
Vishay Siliconix

SI1428EDH-T1-GE3

bahagian bahagian: 2301

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 10V, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 3.7A, 10V,

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SIS778DN-T1-GE3
Vishay Siliconix

SIS778DN-T1-GE3

bahagian bahagian: 2237

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 35A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 5 mOhm @ 10A, 10V,

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SUM25P10-138-E3
Vishay Siliconix

SUM25P10-138-E3

bahagian bahagian: 2130

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16.7A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 13.8 mOhm @ 6A, 10V,

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IRFP360PBF
Vishay Siliconix

IRFP360PBF

bahagian bahagian: 17668

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 400V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 23A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 200 mOhm @ 14A, 10V,

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IRFIBC30GPBF
Vishay Siliconix

IRFIBC30GPBF

bahagian bahagian: 22948

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 2.2 Ohm @ 1.5A, 10V,

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SIHF30N60E-GE3
Vishay Siliconix

SIHF30N60E-GE3

bahagian bahagian: 21645

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 29A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 125 mOhm @ 15A, 10V,

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SI5499DC-T1-GE3
Vishay Siliconix

SI5499DC-T1-GE3

bahagian bahagian: 2090

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 36 mOhm @ 5.1A, 4.5V,

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IRFD9110PBF
Vishay Siliconix

IRFD9110PBF

bahagian bahagian: 77098

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 700mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.2 Ohm @ 420mA, 10V,

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SIS626DN-T1-GE3
Vishay Siliconix

SIS626DN-T1-GE3

bahagian bahagian: 2276

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 10V, Rds On (Maks) @ Id, Vgs: 9 mOhm @ 10A, 10V,

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SIR494DP-T1-GE3
Vishay Siliconix

SIR494DP-T1-GE3

bahagian bahagian: 75925

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 1.2 mOhm @ 20A, 10V,

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SIR798DP-T1-GE3
Vishay Siliconix

SIR798DP-T1-GE3

bahagian bahagian: 6311

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 2.05 Ohm @ 20A, 10V,

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IRF9640STRRPBF
Vishay Siliconix

IRF9640STRRPBF

bahagian bahagian: 35879

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 500 mOhm @ 6.6A, 10V,

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SUD45P04-16P-GE3
Vishay Siliconix

SUD45P04-16P-GE3

bahagian bahagian: 2119

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 36A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 16.2 mOhm @ 14A, 20V,

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SI4410BDY-T1-GE3
Vishay Siliconix

SI4410BDY-T1-GE3

bahagian bahagian: 148655

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 13.5 mOhm @ 10A, 10V,

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IRF830APBF
Vishay Siliconix

IRF830APBF

bahagian bahagian: 53105

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.4 Ohm @ 3A, 10V,

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SI4620DY-T1-GE3
Vishay Siliconix

SI4620DY-T1-GE3

bahagian bahagian: 150899

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Ta), 7.5A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 6A, 10V,

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SI7102DN-T1-GE3
Vishay Siliconix

SI7102DN-T1-GE3

bahagian bahagian: 80934

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 35A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 3.8 mOhm @ 15A, 4.5V,

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SI1002R-T1-GE3
Vishay Siliconix

SI1002R-T1-GE3

bahagian bahagian: 5671

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 610mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 560 mOhm @ 500mA, 4.5V,

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SIB404DK-T1-GE3
Vishay Siliconix

SIB404DK-T1-GE3

bahagian bahagian: 121441

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, Rds On (Maks) @ Id, Vgs: 19 mOhm @ 3A, 4.5V,

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SI4396DY-T1-GE3
Vishay Siliconix

SI4396DY-T1-GE3

bahagian bahagian: 6234

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 11.5 mOhm @ 10A, 10V,

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IRLZ44SPBF
Vishay Siliconix

IRLZ44SPBF

bahagian bahagian: 21719

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 50A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 5V, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 31A, 5V,

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SUM90N04-3M3P-E3
Vishay Siliconix

SUM90N04-3M3P-E3

bahagian bahagian: 66360

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 90A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3.3 mOhm @ 22A, 10V,

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SQD45P03-12_GE3
Vishay Siliconix

SQD45P03-12_GE3

bahagian bahagian: 40076

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 50A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 15A, 10V,

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SIB437EDKT-T1-GE3
Vishay Siliconix

SIB437EDKT-T1-GE3

bahagian bahagian: 139558

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.2V, 4.5V, Rds On (Maks) @ Id, Vgs: 34 mOhm @ 3A, 4.5V,

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SI7794DP-T1-GE3
Vishay Siliconix

SI7794DP-T1-GE3

bahagian bahagian: 2382

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 28.6A (Ta), 60A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3.4 mOhm @ 20A, 10V,

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SQM120P06-07L_GE3
Vishay Siliconix

SQM120P06-07L_GE3

bahagian bahagian: 41168

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 6.7 mOhm @ 30A, 10V,

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SIR774DP-T1-GE3
Vishay Siliconix

SIR774DP-T1-GE3

bahagian bahagian: 2137

Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V,

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SIR472DP-T1-GE3
Vishay Siliconix

SIR472DP-T1-GE3

bahagian bahagian: 197213

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 12 mOhm @ 13.8A, 10V,

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SI7405BDN-T1-GE3
Vishay Siliconix

SI7405BDN-T1-GE3

bahagian bahagian: 132127

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 13 mOhm @ 13.5A, 4.5V,

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SI4636DY-T1-GE3
Vishay Siliconix

SI4636DY-T1-GE3

bahagian bahagian: 2164

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 17A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 8.5 mOhm @ 10A, 10V,

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SI4712DY-T1-GE3
Vishay Siliconix

SI4712DY-T1-GE3

bahagian bahagian: 188239

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 14.6A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 13 mOhm @ 15A, 10V,

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SUP25P10-138-GE3
Vishay Siliconix

SUP25P10-138-GE3

bahagian bahagian: 2159

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16.3A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 13.8 mOhm @ 6A, 10V,

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SUM120N04-1M7L-GE3
Vishay Siliconix

SUM120N04-1M7L-GE3

bahagian bahagian: 2166

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 17 mOhm @ 30A, 10V,

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SIR866DP-T1-GE3
Vishay Siliconix

SIR866DP-T1-GE3

bahagian bahagian: 57436

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 1.9 mOhm @ 20A, 10V,

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IRF740ASPBF
Vishay Siliconix

IRF740ASPBF

bahagian bahagian: 34632

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 400V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 550 mOhm @ 6A, 10V,

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IRFI720GPBF
Vishay Siliconix

IRFI720GPBF

bahagian bahagian: 26997

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 400V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.6A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.8 Ohm @ 1.6A, 10V,

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