Transistor - FET, MOSFET - Bujang

Rumah
Transistor - FET, MOSFET - Bujang

SI5410DU-T1-GE3

Vishay Siliconix

SI5410DU-T1-GE3

bahagian bahagian: 139887

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 6.6A, 10V,

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Vishay Siliconix

SI1046X-T1-GE3

bahagian bahagian: 594

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 420 mOhm @ 606mA, 4.5V,

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SI4170DY-T1-GE3

Vishay Siliconix

SI4170DY-T1-GE3

bahagian bahagian: 632

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3.5 mOhm @ 15A, 10V,

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SIB800EDK-T1-GE3

Vishay Siliconix

SIB800EDK-T1-GE3

bahagian bahagian: 598

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.5A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 225 mOhm @ 1.6A, 4.5V,

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SQD50P04-13L_GE3

Vishay Siliconix

SQD50P04-13L_GE3

bahagian bahagian: 51938

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 50A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 13 mOhm @ 17A, 10V,

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Vishay Siliconix

IRLR110TRPBF

bahagian bahagian: 168656

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.3A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 5V, Rds On (Maks) @ Id, Vgs: 540 mOhm @ 2.6A, 5V,

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Vishay Siliconix

SI1071X-T1-GE3

bahagian bahagian: 707

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 10V, Rds On (Maks) @ Id, Vgs: 167 mOhm @ 960mA, 10V,

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SI7196DP-T1-GE3

Vishay Siliconix

SI7196DP-T1-GE3

bahagian bahagian: 600

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 11 mOhm @ 12A, 10V,

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Vishay Siliconix

IRL620PBF

bahagian bahagian: 38368

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.2A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 5V, Rds On (Maks) @ Id, Vgs: 800 mOhm @ 3.1A, 5V,

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SI5463EDC-T1-E3

Vishay Siliconix

SI5463EDC-T1-E3

bahagian bahagian: 421

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 62 mOhm @ 4A, 4.5V,

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Vishay Siliconix

IRLD110PBF

bahagian bahagian: 75536

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 5V, Rds On (Maks) @ Id, Vgs: 540 mOhm @ 600mA, 5V,

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Vishay Siliconix

SI1065X-T1-E3

bahagian bahagian: 402

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 12V, Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 156 mOhm @ 1.18A, 4.5V,

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SI2302ADS-T1-E3

Vishay Siliconix

SI2302ADS-T1-E3

bahagian bahagian: 415

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.1A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 60 mOhm @ 3.6A, 4.5V,

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Vishay Siliconix

SI7382DP-T1-E3

bahagian bahagian: 418

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 14A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 4.7 mOhm @ 24A, 10V,

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SI7483ADP-T1-E3

Vishay Siliconix

SI7483ADP-T1-E3

bahagian bahagian: 6063

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 14A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 5.7 mOhm @ 24A, 10V,

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Vishay Siliconix

SI1488DH-T1-E3

bahagian bahagian: 436

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.1A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 49 mOhm @ 4.6A, 4.5V,

Senarai harapan

Vishay Siliconix

SI1012X-T1-E3

bahagian bahagian: 412

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 500mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V,

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SI3455ADV-T1-E3

Vishay Siliconix

SI3455ADV-T1-E3

bahagian bahagian: 456

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.7A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 3.5A, 10V,

Senarai harapan

Vishay Siliconix

SI1058X-T1-E3

bahagian bahagian: 416

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 91 mOhm @ 1.3A, 4.5V,

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SUM110N06-3M9H-E3

Vishay Siliconix

SUM110N06-3M9H-E3

bahagian bahagian: 22212

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 110A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 3.9 mOhm @ 30A, 10V,

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SI1413EDH-T1-E3

Vishay Siliconix

SI1413EDH-T1-E3

bahagian bahagian: 6088

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.3A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 115 mOhm @ 2.9A, 4.5V,

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SI3447BDV-T1-E3

Vishay Siliconix

SI3447BDV-T1-E3

bahagian bahagian: 447

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 6A, 4.5V,

Senarai harapan

Vishay Siliconix

SI8424DB-T1-E1

bahagian bahagian: 491

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12.2A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.2V, 4.5V, Rds On (Maks) @ Id, Vgs: 31 mOhm @ 1A, 4.5V,

Senarai harapan

Vishay Siliconix

SI4831DY-T1-E3

bahagian bahagian: 411

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 5A, 10V,

Senarai harapan

Vishay Siliconix

SI3495DV-T1-E3

bahagian bahagian: 440

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 24 mOhm @ 7A, 4.5V,

Senarai harapan

Vishay Siliconix

SI1433DH-T1-E3

bahagian bahagian: 381

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.9A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 150 mOhm @ 2.2A, 10V,

Senarai harapan

Vishay Siliconix

SI5853DC-T1-E3

bahagian bahagian: 459

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.7A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 110 mOhm @ 2.7A, 4.5V,

Senarai harapan

SI1305EDL-T1-E3

Vishay Siliconix

SI1305EDL-T1-E3

bahagian bahagian: 470

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 860mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 280 mOhm @ 1A, 4.5V,

Senarai harapan

Vishay Siliconix

SI5485DU-T1-E3

bahagian bahagian: 483

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 5.9A, 4.5V,

Senarai harapan

Vishay Siliconix

TN0200K-T1-E3

bahagian bahagian: 471

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 400 mOhm @ 600mA, 4.5V,

Senarai harapan

Vishay Siliconix

SI8405DB-T1-E1

bahagian bahagian: 486

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.6A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 55 mOhm @ 1A, 4.5V,

Senarai harapan

SI3441BDV-T1-E3

Vishay Siliconix

SI3441BDV-T1-E3

bahagian bahagian: 462

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.45A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 3.3A, 4.5V,

Senarai harapan

Vishay Siliconix

SIE800DF-T1-E3

bahagian bahagian: 487

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 50A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 7.2 mOhm @ 11A, 10V,

Senarai harapan

Vishay Siliconix

IRFBE30PBF

bahagian bahagian: 41858

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 800V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.1A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 3 Ohm @ 2.5A, 10V,

Senarai harapan

Vishay Siliconix

SI5480DU-T1-E3

bahagian bahagian: 443

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 16 mOhm @ 7.2A, 10V,

Senarai harapan

Vishay Siliconix

SIE830DF-T1-E3

bahagian bahagian: 450

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 50A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 4.2 mOhm @ 16A, 10V,

Senarai harapan

3600

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