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Transistor - FET, MOSFET - Bujang

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  • Transistor - FET, MOSFET - Bujang
IRLL1905TR
Vishay Siliconix

IRLL1905TR

bahagian bahagian: 9308

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.6A (Ta),

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SIR642DP-T1-GE3
Vishay Siliconix

SIR642DP-T1-GE3

bahagian bahagian: 96123

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 2.4 mOhm @ 15A, 10V,

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SUD25N04-25-T4-E3
Vishay Siliconix

SUD25N04-25-T4-E3

bahagian bahagian: 9481

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 25A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 25A, 10V,

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SI2305ADS-T1-GE3
Vishay Siliconix

SI2305ADS-T1-GE3

bahagian bahagian: 9345

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.4A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 4.1A, 4.5V,

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SIB415DK-T1-GE3
Vishay Siliconix

SIB415DK-T1-GE3

bahagian bahagian: 9323

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 87 mOhm @ 4.17A, 10V,

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IRF2807ZSTRL
Vishay Siliconix

IRF2807ZSTRL

bahagian bahagian: 9393

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 75V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 9.4 mOhm @ 53A, 10V,

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SUM27N20-78-E3
Vishay Siliconix

SUM27N20-78-E3

bahagian bahagian: 9313

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 27A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 78 mOhm @ 20A, 10V,

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SIR788DP-T1-GE3
Vishay Siliconix

SIR788DP-T1-GE3

bahagian bahagian: 139903

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3.4 mOhm @ 20A, 10V,

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SIR640DP-T1-GE3
Vishay Siliconix

SIR640DP-T1-GE3

bahagian bahagian: 9450

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 1.7 mOhm @ 20A, 10V,

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SI3481DV-T1-GE3
Vishay Siliconix

SI3481DV-T1-GE3

bahagian bahagian: 9413

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 48 mOhm @ 5.3A, 10V,

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SI1303DL-T1-GE3
Vishay Siliconix

SI1303DL-T1-GE3

bahagian bahagian: 9407

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 670mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 430 mOhm @ 1A, 4.5V,

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SI5853CDC-T1-E3
Vishay Siliconix

SI5853CDC-T1-E3

bahagian bahagian: 9404

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 104 mOhm @ 2.5A, 4.5V,

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IRF644N
Vishay Siliconix

IRF644N

bahagian bahagian: 9177

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 250V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 14A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 240 mOhm @ 8.4A, 10V,

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SI7407DN-T1-GE3
Vishay Siliconix

SI7407DN-T1-GE3

bahagian bahagian: 9387

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.9A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 12 mOhm @ 15.6A, 4.5V,

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IRFZ44R
Vishay Siliconix

IRFZ44R

bahagian bahagian: 9161

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 50A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 31A, 10V,

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SUM47N10-24L-E3
Vishay Siliconix

SUM47N10-24L-E3

bahagian bahagian: 9288

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 47A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 24 mOhm @ 40A, 10V,

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SUM110N04-03-E3
Vishay Siliconix

SUM110N04-03-E3

bahagian bahagian: 9456

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 110A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 2.8 mOhm @ 30A, 10V,

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SI9424BDY-T1-E3
Vishay Siliconix

SI9424BDY-T1-E3

bahagian bahagian: 9338

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.6A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 7.1A, 4.5V,

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IRLU3714TR
Vishay Siliconix

IRLU3714TR

bahagian bahagian: 9321

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 36A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 18A, 10V,

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SI4836DY-T1-E3
Vishay Siliconix

SI4836DY-T1-E3

bahagian bahagian: 9523

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 17A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 3 mOhm @ 25A, 4.5V,

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SI4384DY-T1-GE3
Vishay Siliconix

SI4384DY-T1-GE3

bahagian bahagian: 99155

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 8.5 mOhm @ 15A, 10V,

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SIA811DJ-T1-GE3
Vishay Siliconix

SIA811DJ-T1-GE3

bahagian bahagian: 9358

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 94 mOhm @ 2.8A, 4.5V,

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IRFI620
Vishay Siliconix

IRFI620

bahagian bahagian: 9269

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.1A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 800 mOhm @ 2.5A, 10V,

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IRF7822TRL
Vishay Siliconix

IRF7822TRL

bahagian bahagian: 9261

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 18A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, Rds On (Maks) @ Id, Vgs: 6.5 mOhm @ 15A, 4.5V,

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IRFR9310PBF
Vishay Siliconix

IRFR9310PBF

bahagian bahagian: 53149

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 400V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.8A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 7 Ohm @ 1.1A, 10V,

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IRFB16N50K
Vishay Siliconix

IRFB16N50K

bahagian bahagian: 9492

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 17A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 350 mOhm @ 10A, 10V,

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SI5402BDC-T1-E3
Vishay Siliconix

SI5402BDC-T1-E3

bahagian bahagian: 9317

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.9A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 4.9A, 10V,

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SI1402DH-T1-E3
Vishay Siliconix

SI1402DH-T1-E3

bahagian bahagian: 9470

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.7A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 77 mOhm @ 3A, 4.5V,

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SIR878DP-T1-GE3
Vishay Siliconix

SIR878DP-T1-GE3

bahagian bahagian: 73118

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 40A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 14 mOhm @ 15A, 10V,

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SI1411DH-T1-E3
Vishay Siliconix

SI1411DH-T1-E3

bahagian bahagian: 5957

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 150V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 420mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 2.6 Ohm @ 500mA, 10V,

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IRF644NS
Vishay Siliconix

IRF644NS

bahagian bahagian: 9208

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 250V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 14A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 240 mOhm @ 8.4A, 10V,

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SI2302ADS-T1
Vishay Siliconix

SI2302ADS-T1

bahagian bahagian: 9447

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.1A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 60 mOhm @ 3.6A, 4.5V,

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IRF3314STRL
Vishay Siliconix

IRF3314STRL

bahagian bahagian: 9228

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 150V, Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V,

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IRFB13N50A
Vishay Siliconix

IRFB13N50A

bahagian bahagian: 9258

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 14A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 450 mOhm @ 8.4A, 10V,

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SI3481DV-T1-E3
Vishay Siliconix

SI3481DV-T1-E3

bahagian bahagian: 9272

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 48 mOhm @ 5.3A, 10V,

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SUM110N03-03P-E3
Vishay Siliconix

SUM110N03-03P-E3

bahagian bahagian: 9469

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 110A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 2.6 mOhm @ 30A, 10V,

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