Menu
MelayuMelayu
Rfqs / order.
0Rfqs / order.

Transistor - FET, MOSFET - Bujang

  • Rumah
  •  
  • Transistor - FET, MOSFET - Bujang
SI4126DY-T1-GE3
Vishay Siliconix

SI4126DY-T1-GE3

bahagian bahagian: 61700

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 39A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 2.75 mOhm @ 15A, 10V,

Senarai harapan
SIR870DP-T1-GE3
Vishay Siliconix

SIR870DP-T1-GE3

bahagian bahagian: 60973

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 6 mOhm @ 20A, 10V,

Senarai harapan
SIR826DP-T1-RE3
Vishay Siliconix

SIR826DP-T1-RE3

bahagian bahagian: 7967

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 4.8 mOhm @ 20A, 10V,

Senarai harapan
SUD19N20-90-T4-E3
Vishay Siliconix

SUD19N20-90-T4-E3

bahagian bahagian: 49898

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 19A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 5A, 10V,

Senarai harapan
SIHD7N60E-E3
Vishay Siliconix

SIHD7N60E-E3

bahagian bahagian: 76161

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 600 mOhm @ 3.5A, 10V,

Senarai harapan
SI1032R-T1-GE3
Vishay Siliconix

SI1032R-T1-GE3

bahagian bahagian: 195024

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 140mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V,

Senarai harapan
SI7430DP-T1-E3
Vishay Siliconix

SI7430DP-T1-E3

bahagian bahagian: 61538

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 150V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 26A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 8V, 10V, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 5A, 10V,

Senarai harapan
SUD40N10-25-E3
Vishay Siliconix

SUD40N10-25-E3

bahagian bahagian: 44764

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 40A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 40A, 10V,

Senarai harapan
SQJ457EP-T1_GE3
Vishay Siliconix

SQJ457EP-T1_GE3

bahagian bahagian: 184399

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 36A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 10A, 10V,

Senarai harapan
SI2312CDS-T1-GE3
Vishay Siliconix

SI2312CDS-T1-GE3

bahagian bahagian: 162492

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 31.8 mOhm @ 5A, 4.5V,

Senarai harapan
SI7390DP-T1-E3
Vishay Siliconix

SI7390DP-T1-E3

bahagian bahagian: 57412

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 9.5 mOhm @ 15A, 10V,

Senarai harapan
SQM90142E_GE3
Vishay Siliconix

SQM90142E_GE3

bahagian bahagian: 44244

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 95A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 15.3 mOhm @ 20A, 10V,

Senarai harapan
SIHF12N60E-GE3
Vishay Siliconix

SIHF12N60E-GE3

bahagian bahagian: 50457

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 380 mOhm @ 6A, 10V,

Senarai harapan
SIHJ8N60E-T1-GE3
Vishay Siliconix

SIHJ8N60E-T1-GE3

bahagian bahagian: 69561

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 520 mOhm @ 4A, 10V,

Senarai harapan
SUD40151EL-GE3
Vishay Siliconix

SUD40151EL-GE3

bahagian bahagian: 7913

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 42A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 12 mOhm @ 17.5A, 10V,

Senarai harapan
SI2333CDS-T1-E3
Vishay Siliconix

SI2333CDS-T1-E3

bahagian bahagian: 105597

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.1A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 5.1A, 4.5V,

Senarai harapan
SI2308BDS-T1-GE3
Vishay Siliconix

SI2308BDS-T1-GE3

bahagian bahagian: 119268

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.3A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 156 mOhm @ 1.9A, 10V,

Senarai harapan
SQ4401EY-T1_GE3
Vishay Siliconix

SQ4401EY-T1_GE3

bahagian bahagian: 57436

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 17.3A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 14 mOhm @ 10.5A, 10V,

Senarai harapan
SIR846ADP-T1-GE3
Vishay Siliconix

SIR846ADP-T1-GE3

bahagian bahagian: 67682

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 7.8 mOhm @ 20A, 10V,

Senarai harapan
SIHU7N60E-E3
Vishay Siliconix

SIHU7N60E-E3

bahagian bahagian: 74123

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 600 mOhm @ 3.5A, 10V,

Senarai harapan
SI4456DY-T1-E3
Vishay Siliconix

SI4456DY-T1-E3

bahagian bahagian: 68718

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 33A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3.8 mOhm @ 20A, 10V,

Senarai harapan
SQD90P04-9M4L_GE3
Vishay Siliconix

SQD90P04-9M4L_GE3

bahagian bahagian: 60943

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 90A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 9.4 mOhm @ 17A, 10V,

Senarai harapan
TP0610K-T1-GE3
Vishay Siliconix

TP0610K-T1-GE3

bahagian bahagian: 190872

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 185mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 6 Ohm @ 500mA, 10V,

Senarai harapan
SIR826DP-T1-GE3
Vishay Siliconix

SIR826DP-T1-GE3

bahagian bahagian: 51964

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 4.8 mOhm @ 20A, 10V,

Senarai harapan
SI4190ADY-T1-GE3
Vishay Siliconix

SI4190ADY-T1-GE3

bahagian bahagian: 82342

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 18.4A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 8.8 mOhm @ 15A, 10V,

Senarai harapan
SIS413DN-T1-GE3
Vishay Siliconix

SIS413DN-T1-GE3

bahagian bahagian: 136739

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 18A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 9.4 mOhm @ 15A, 10V,

Senarai harapan
SI2372DS-T1-GE3
Vishay Siliconix

SI2372DS-T1-GE3

bahagian bahagian: 142591

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A (Ta), 5.3A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 33 mOhm @ 3A, 10V,

Senarai harapan
SI7898DP-T1-GE3
Vishay Siliconix

SI7898DP-T1-GE3

bahagian bahagian: 37995

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 150V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 85 mOhm @ 3.5A, 10V,

Senarai harapan
SIA400EDJ-T1-GE3
Vishay Siliconix

SIA400EDJ-T1-GE3

bahagian bahagian: 108266

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 19 mOhm @ 11A, 4.5V,

Senarai harapan
SQM40P10-40L_GE3
Vishay Siliconix

SQM40P10-40L_GE3

bahagian bahagian: 8011

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 40A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 17A, 10V,

Senarai harapan
SI7636DP-T1-GE3
Vishay Siliconix

SI7636DP-T1-GE3

bahagian bahagian: 58750

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 17A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 4 mOhm @ 25A, 10V,

Senarai harapan
SIDR402DP-T1-GE3
Vishay Siliconix

SIDR402DP-T1-GE3

bahagian bahagian: 5860

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 64.6A (Ta), 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 0.88 mOhm @ 20A, 10V,

Senarai harapan
SIR882DP-T1-GE3
Vishay Siliconix

SIR882DP-T1-GE3

bahagian bahagian: 60907

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 8.7 mOhm @ 20A, 10V,

Senarai harapan
SQJ461EP-T1_GE3
Vishay Siliconix

SQJ461EP-T1_GE3

bahagian bahagian: 52002

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 16 mOhm @ 14.4A, 10V,

Senarai harapan
SUM70060E-GE3
Vishay Siliconix

SUM70060E-GE3

bahagian bahagian: 62874

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 131A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 7.5V, 10V, Rds On (Maks) @ Id, Vgs: 5.6 mOhm @ 30A, 10V,

Senarai harapan
SQJQ404E-T1_GE3
Vishay Siliconix

SQJQ404E-T1_GE3

bahagian bahagian: 8038

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 200A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.72 mOhm @ 20A, 10V,

Senarai harapan