Diod - Zener - Bujang | Produk Semikonduktor Diskrit | 100

BZX384C13-G3-08

bahagian bahagian: 100276

Voltan - Zener (Nom) (Vz): 13V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 8V,

Senarai harapan

Vishay Semiconductor Diodes Division

BZT52B16-E3-18

bahagian bahagian: 184998

Voltan - Zener (Nom) (Vz): 16V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 13 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 12V,

Senarai harapan

Vishay Semiconductor Diodes Division

BZT52C43-E3-18

bahagian bahagian: 178292

Voltan - Zener (Nom) (Vz): 43V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 60 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 32V,

Senarai harapan

Vishay Semiconductor Diodes Division

BZT52B2V7-G3-08

bahagian bahagian: 181791

Voltan - Zener (Nom) (Vz): 2.7V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 75 Ohms,

Senarai harapan

Vishay Semiconductor Diodes Division

BZX384B30-HE3-08

bahagian bahagian: 140857

Voltan - Zener (Nom) (Vz): 30V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 21V,

Senarai harapan

Vishay Semiconductor Diodes Division

BZT52B9V1-G3-08

bahagian bahagian: 138599

Voltan - Zener (Nom) (Vz): 9.1V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 4.8 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 7V,

Senarai harapan

Vishay Semiconductor Diodes Division

BZT52B22-HE3-18

bahagian bahagian: 174208

Voltan - Zener (Nom) (Vz): 22V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 25 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 17V,

Senarai harapan

Vishay Semiconductor Diodes Division

BZT52C27-HE3-08

bahagian bahagian: 133303

Voltan - Zener (Nom) (Vz): 27V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 20V,

Senarai harapan

Vishay Semiconductor Diodes Division

BZT52B36-HE3-08

bahagian bahagian: 192689

Voltan - Zener (Nom) (Vz): 36V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 27V,

Senarai harapan

Vishay Semiconductor Diodes Division

BZX384B62-G3-18

bahagian bahagian: 139667

Voltan - Zener (Nom) (Vz): 62V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 215 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 43.4V,

Senarai harapan

Vishay Semiconductor Diodes Division

BZX384C9V1-G3-18

bahagian bahagian: 135974

Voltan - Zener (Nom) (Vz): 9.1V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 500nA @ 6V,

Senarai harapan

Vishay Semiconductor Diodes Division

BZT52C10-HE3-18

bahagian bahagian: 155186

Voltan - Zener (Nom) (Vz): 10V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 5.2 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 7.5V,

Senarai harapan

Vishay Semiconductor Diodes Division

BZX384B22-G3-08

bahagian bahagian: 101279

Voltan - Zener (Nom) (Vz): 22V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 55 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 15.4V,

Senarai harapan

Vishay Semiconductor Diodes Division

BZT52B5V6-HE3-18

bahagian bahagian: 156598

Voltan - Zener (Nom) (Vz): 5.6V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 10 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 1V,

Senarai harapan

Vishay Semiconductor Diodes Division

BZT52C56-E3-18

bahagian bahagian: 191213

Voltan - Zener (Nom) (Vz): 56V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 135 Ohms,

Senarai harapan

Vishay Semiconductor Diodes Division

BZT52B2V7-HE3-18

bahagian bahagian: 162802

Voltan - Zener (Nom) (Vz): 2.7V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 75 Ohms,

Senarai harapan

Vishay Semiconductor Diodes Division

BZT52B5V6-G3-08

bahagian bahagian: 172657

Voltan - Zener (Nom) (Vz): 5.6V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 10 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 1V,

Senarai harapan

Vishay Semiconductor Diodes Division

BZT52B6V2-HE3-08

bahagian bahagian: 122133

Voltan - Zener (Nom) (Vz): 6.2V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 4.8 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 2V,

Senarai harapan

Vishay Semiconductor Diodes Division

BZT52C30-G3-18

bahagian bahagian: 184733

Voltan - Zener (Nom) (Vz): 30V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 35 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 22.5V,

Senarai harapan

Vishay Semiconductor Diodes Division

BZT52B68-G3-18

bahagian bahagian: 170816

Voltan - Zener (Nom) (Vz): 68V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 200 Ohms,

Senarai harapan

Vishay Semiconductor Diodes Division

BZT52B11-HE3-08

bahagian bahagian: 129657

Voltan - Zener (Nom) (Vz): 11V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 6 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 8.5V,

Senarai harapan

Vishay Semiconductor Diodes Division

BZT52C3V9-E3-18

bahagian bahagian: 184732

Voltan - Zener (Nom) (Vz): 3.9V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 80 Ohms,

Senarai harapan

Vishay Semiconductor Diodes Division

BZX384C20-E3-18

bahagian bahagian: 136831

Voltan - Zener (Nom) (Vz): 20V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 55 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 14V,

Senarai harapan

Vishay Semiconductor Diodes Division

BZT52C3V6-G3-08

bahagian bahagian: 180771

Voltan - Zener (Nom) (Vz): 3.6V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 80 Ohms,

Senarai harapan

Vishay Semiconductor Diodes Division

BZX384C18-G3-18

bahagian bahagian: 137544

Voltan - Zener (Nom) (Vz): 18V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 45 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 12.6V,

Senarai harapan

Vishay Semiconductor Diodes Division

BZT52C24-G3-18

bahagian bahagian: 141242

Voltan - Zener (Nom) (Vz): 24V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 28 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 18V,

Senarai harapan

Vishay Semiconductor Diodes Division

BZT52C2V7-HE3-18

bahagian bahagian: 196857

Voltan - Zener (Nom) (Vz): 2.7V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 75 Ohms,

Senarai harapan

Vishay Semiconductor Diodes Division

BZX384B4V7-E3-08

bahagian bahagian: 148443

Voltan - Zener (Nom) (Vz): 4.7V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 2V,

Senarai harapan

Vishay Semiconductor Diodes Division

BZT52B3V9-HE3-08

bahagian bahagian: 279

Voltan - Zener (Nom) (Vz): 3.9V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 80 Ohms,

Senarai harapan

Vishay Semiconductor Diodes Division

BZT52C5V6-G3-18

bahagian bahagian: 160762

Voltan - Zener (Nom) (Vz): 5.6V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 10 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 1V,

Senarai harapan

Vishay Semiconductor Diodes Division

BZX384B20-HE3-08

bahagian bahagian: 121001

Voltan - Zener (Nom) (Vz): 20V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 55 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 14V,

Senarai harapan

Vishay Semiconductor Diodes Division

BZT52B20-HE3-18

bahagian bahagian: 103560

Voltan - Zener (Nom) (Vz): 20V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 15V,

Senarai harapan

Vishay Semiconductor Diodes Division

BZT52C18-E3-18

bahagian bahagian: 110932

Voltan - Zener (Nom) (Vz): 18V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 18 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 14V,

Senarai harapan

Vishay Semiconductor Diodes Division

BZX384B22-G3-18

bahagian bahagian: 149367

Voltan - Zener (Nom) (Vz): 22V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 55 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 15.4V,

Senarai harapan

Vishay Semiconductor Diodes Division

BZX384B4V3-HE3-18

bahagian bahagian: 181170

Voltan - Zener (Nom) (Vz): 4.3V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 1V,

Senarai harapan

Vishay Semiconductor Diodes Division

BZX384C5V6-G3-18

bahagian bahagian: 126995

Voltan - Zener (Nom) (Vz): 5.6V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 2V,

Senarai harapan