Diod - Zener - Bujang | Produk Semikonduktor Diskrit | 100

BZG05C10TR

bahagian bahagian: 6353

Voltan - Zener (Nom) (Vz): 10V, Kuasa - Maks: 1.25W, Impedans (Maks) (Zzt): 200 Ohms, Semasa - Kebocoran Terbalik @ Vr: 500nA @ 7V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 200mA,

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Vishay Semiconductor Diodes Division

BZG03C68TR

bahagian bahagian: 191187

Voltan - Zener (Nom) (Vz): 68V, Kuasa - Maks: 1.25W, Impedans (Maks) (Zzt): 25 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 51V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 500mA,

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Vishay Semiconductor Diodes Division

BZG03C56TR

bahagian bahagian: 188803

Voltan - Zener (Nom) (Vz): 56V, Kuasa - Maks: 1.25W, Impedans (Maks) (Zzt): 25 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 43V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 500mA,

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Vishay Semiconductor Diodes Division

BZG03C30TR

bahagian bahagian: 135083

Voltan - Zener (Nom) (Vz): 30V, Kuasa - Maks: 1.25W, Impedans (Maks) (Zzt): 8 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 22V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 500mA,

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Vishay Semiconductor Diodes Division

BZG03C22TR

bahagian bahagian: 193971

Voltan - Zener (Nom) (Vz): 22V, Kuasa - Maks: 1.25W, Impedans (Maks) (Zzt): 6 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 16V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 500mA,

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Vishay Semiconductor Diodes Division

BZG03C120TR

bahagian bahagian: 178659

Voltan - Zener (Nom) (Vz): 120V, Kuasa - Maks: 1.25W, Impedans (Maks) (Zzt): 7 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 9.1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 500mA,

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Vishay Semiconductor Diodes Division

BZG03C200TR3

bahagian bahagian: 150384

Voltan - Zener (Nom) (Vz): 200V, Kuasa - Maks: 1.25W, Impedans (Maks) (Zzt): 200 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 150V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 500mA,

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Vishay Semiconductor Diodes Division

BZM55C36-TR

bahagian bahagian: 161636

Voltan - Zener (Nom) (Vz): 36V, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 220 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 27V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 200mA,

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Vishay Semiconductor Diodes Division

BZT55C2V7-GS08

bahagian bahagian: 142615

Voltan - Zener (Nom) (Vz): 2.7V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 85 Ohms, Semasa - Kebocoran Terbalik @ Vr: 10µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 200mA,

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Vishay Semiconductor Diodes Division

BZM55C7V5-TR

bahagian bahagian: 102584

Voltan - Zener (Nom) (Vz): 7.5V, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 50 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 5V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 200mA,

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Vishay Semiconductor Diodes Division

BZT55C6V2-GS08

bahagian bahagian: 109970

Voltan - Zener (Nom) (Vz): 6.2V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 10 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 200mA,

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Vishay Semiconductor Diodes Division

BZT55C13-GS08

bahagian bahagian: 129892

Voltan - Zener (Nom) (Vz): 13V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 26 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 10V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 200mA,

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Vishay Semiconductor Diodes Division

BZM55C20-TR

bahagian bahagian: 110562

Voltan - Zener (Nom) (Vz): 20V, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 220 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 15V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 200mA,

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Vishay Semiconductor Diodes Division

BZT55C11-GS08

bahagian bahagian: 101789

Voltan - Zener (Nom) (Vz): 11V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 8.2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 200mA,

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Vishay Semiconductor Diodes Division

BZX84B16-G3-08

bahagian bahagian: 130586

Voltan - Zener (Nom) (Vz): 16V, Toleransi: ±2%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 11.2V,

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Vishay Semiconductor Diodes Division

BZX384B3V3-HE3-08

bahagian bahagian: 175383

Voltan - Zener (Nom) (Vz): 3.3V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 95 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 1V,

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Vishay Semiconductor Diodes Division

BZX384B51-HE3-08

bahagian bahagian: 120440

Voltan - Zener (Nom) (Vz): 51V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 180 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 35.7V,

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Vishay Semiconductor Diodes Division

BZX384C4V7-HE3-08

bahagian bahagian: 142281

Voltan - Zener (Nom) (Vz): 4.7V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 2V,

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Vishay Semiconductor Diodes Division

BZT52C30-E3-08

bahagian bahagian: 187588

Voltan - Zener (Nom) (Vz): 30V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 35 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 22.5V,

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Vishay Semiconductor Diodes Division

BZX84B6V8-E3-08

bahagian bahagian: 158065

Voltan - Zener (Nom) (Vz): 6.8V, Toleransi: ±2%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2µA @ 4V,

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Vishay Semiconductor Diodes Division

BZX384C36-E3-08

bahagian bahagian: 147269

Voltan - Zener (Nom) (Vz): 36V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 25.2V,

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Vishay Semiconductor Diodes Division

BZX384B2V4-E3-08

bahagian bahagian: 168464

Voltan - Zener (Nom) (Vz): 2.4V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 100 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50µA @ 1V,

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Vishay Semiconductor Diodes Division

BZX384C5V1-HE3-08

bahagian bahagian: 100238

Voltan - Zener (Nom) (Vz): 5.1V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 60 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2µA @ 2V,

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Vishay Semiconductor Diodes Division

BZX384C2V7-E3-08

bahagian bahagian: 146381

Voltan - Zener (Nom) (Vz): 2.7V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 100 Ohms, Semasa - Kebocoran Terbalik @ Vr: 20µA @ 1V,

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Vishay Semiconductor Diodes Division

BZT52C33-E3-08

bahagian bahagian: 124074

Voltan - Zener (Nom) (Vz): 33V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 25V,

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Vishay Semiconductor Diodes Division

BZX84B22-E3-08

bahagian bahagian: 174625

Voltan - Zener (Nom) (Vz): 22V, Toleransi: ±2%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 55 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 15.4V,

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Vishay Semiconductor Diodes Division

BZT52C13-E3-08

bahagian bahagian: 174396

Voltan - Zener (Nom) (Vz): 13V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 9 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 10V,

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Vishay Semiconductor Diodes Division

BZT52B4V3-E3-08

bahagian bahagian: 176445

Voltan - Zener (Nom) (Vz): 4.3V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 80 Ohms,

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Vishay Semiconductor Diodes Division

BZX384C7V5-HE3-08

bahagian bahagian: 182569

Voltan - Zener (Nom) (Vz): 7.5V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 5V,

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Vishay Semiconductor Diodes Division

BZT52C33-HE3-08

bahagian bahagian: 107189

Voltan - Zener (Nom) (Vz): 33V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 25V,

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Vishay Semiconductor Diodes Division

BZX84B12-E3-08

bahagian bahagian: 182325

Voltan - Zener (Nom) (Vz): 12V, Toleransi: ±2%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 25 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 8V,

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Vishay Semiconductor Diodes Division

BZT52C39-E3-08

bahagian bahagian: 137725

Voltan - Zener (Nom) (Vz): 39V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 50 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 29V,

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Vishay Semiconductor Diodes Division

BZT52C11-E3-08

bahagian bahagian: 156615

Voltan - Zener (Nom) (Vz): 11V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 6 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 8.5V,

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Vishay Semiconductor Diodes Division

BZX384C56-E3-08

bahagian bahagian: 137132

Voltan - Zener (Nom) (Vz): 56V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 200 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 39.2V,

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Vishay Semiconductor Diodes Division

BZX384C4V3-E3-08

bahagian bahagian: 136888

Voltan - Zener (Nom) (Vz): 4.3V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 1V,

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Vishay Semiconductor Diodes Division

BZX384C20-E3-08

bahagian bahagian: 158810

Voltan - Zener (Nom) (Vz): 20V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 55 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 14V,

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