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Diod - Pembetulan - Bujang

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BAS16-G3-08
Vishay Semiconductor Diodes Division

BAS16-G3-08

bahagian bahagian: 185466

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 75V, Semasa - Rata-rata Disahkan (Io): 150mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 150mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 6ns,

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BAL99-E3-08
Vishay Semiconductor Diodes Division

BAL99-E3-08

bahagian bahagian: 175504

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 70V, Semasa - Rata-rata Disahkan (Io): 250mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 150mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 6ns,

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BAL99-E3-18
Vishay Semiconductor Diodes Division

BAL99-E3-18

bahagian bahagian: 164062

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 70V, Semasa - Rata-rata Disahkan (Io): 250mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 150mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 6ns,

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BAS19-E3-18
Vishay Semiconductor Diodes Division

BAS19-E3-18

bahagian bahagian: 178973

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 200mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 200mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 50ns,

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BAV200-GS18
Vishay Semiconductor Diodes Division

BAV200-GS18

bahagian bahagian: 153471

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 250mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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BAV201-GS18
Vishay Semiconductor Diodes Division

BAV201-GS18

bahagian bahagian: 172005

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 250mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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BAV200-GS08
Vishay Semiconductor Diodes Division

BAV200-GS08

bahagian bahagian: 158649

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 250mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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VS-1N3891R
Vishay Semiconductor Diodes Division

VS-1N3891R

bahagian bahagian: 14617

Jenis Diod: Standard, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 12A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 12A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 300ns,

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VS-70HFR120
Vishay Semiconductor Diodes Division

VS-70HFR120

bahagian bahagian: 9505

Jenis Diod: Standard, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 70A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.35V @ 220A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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VS-300U30A
Vishay Semiconductor Diodes Division

VS-300U30A

bahagian bahagian: 1921

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 300V, Semasa - Rata-rata Disahkan (Io): 300A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 942A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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VS-240UR80D
Vishay Semiconductor Diodes Division

VS-240UR80D

bahagian bahagian: 1530

Jenis Diod: Standard, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 320A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.33V @ 750A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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VS-20ETS08SPBF
Vishay Semiconductor Diodes Division

VS-20ETS08SPBF

bahagian bahagian: 25294

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 95ns,

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VS-18TQ045SPBF
Vishay Semiconductor Diodes Division

VS-18TQ045SPBF

bahagian bahagian: 43609

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io): 18A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 600mV @ 18A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VS-1N3209
Vishay Semiconductor Diodes Division

VS-1N3209

bahagian bahagian: 12937

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 15A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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VS-40HFL100S05
Vishay Semiconductor Diodes Division

VS-40HFL100S05

bahagian bahagian: 5411

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 40A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.95V @ 40A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 500ns,

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VS-15TT100
Vishay Semiconductor Diodes Division

VS-15TT100

bahagian bahagian: 125688

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 30A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VS-20ETF12FP-M3
Vishay Semiconductor Diodes Division

VS-20ETF12FP-M3

bahagian bahagian: 11184

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.31V @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 400ns,

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EGL41B/1
Vishay Semiconductor Diodes Division

EGL41B/1

bahagian bahagian: 198616

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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UH1PD-M3/85A
Vishay Semiconductor Diodes Division

UH1PD-M3/85A

bahagian bahagian: 190343

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.05V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 40ns,

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VS-20ETS12S-M3
Vishay Semiconductor Diodes Division

VS-20ETS12S-M3

bahagian bahagian: 33360

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VS-SD1100C12C
Vishay Semiconductor Diodes Division

VS-SD1100C12C

bahagian bahagian: 1247

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 1400A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.31V @ 1500A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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GP10J-4005HE3/54
Vishay Semiconductor Diodes Division

GP10J-4005HE3/54

bahagian bahagian: 161380

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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EGL34G/51
Vishay Semiconductor Diodes Division

EGL34G/51

bahagian bahagian: 119255

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 500mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.35V @ 500mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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MUR160/54
Vishay Semiconductor Diodes Division

MUR160/54

bahagian bahagian: 161367

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

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VS-1N3893
Vishay Semiconductor Diodes Division

VS-1N3893

bahagian bahagian: 10697

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 12A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 12A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 300ns,

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VS-20ETF04-M3
Vishay Semiconductor Diodes Division

VS-20ETF04-M3

bahagian bahagian: 10805

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 160ns,

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RGL34D/1
Vishay Semiconductor Diodes Division

RGL34D/1

bahagian bahagian: 134851

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 500mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 500mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

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VS-40HF100
Vishay Semiconductor Diodes Division

VS-40HF100

bahagian bahagian: 7355

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 40A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 125A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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SD453N16S30PC
Vishay Semiconductor Diodes Division

SD453N16S30PC

bahagian bahagian: 664

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1600V, Semasa - Rata-rata Disahkan (Io): 450A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.85V @ 1500A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 3µs,

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EGL41D/1
Vishay Semiconductor Diodes Division

EGL41D/1

bahagian bahagian: 141735

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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GP10K-4006EHE3/54
Vishay Semiconductor Diodes Division

GP10K-4006EHE3/54

bahagian bahagian: 117977

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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VS-ETH1506S-M3
Vishay Semiconductor Diodes Division

VS-ETH1506S-M3

bahagian bahagian: 46686

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.45V @ 15A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 29ns,

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VS-40HF60
Vishay Semiconductor Diodes Division

VS-40HF60

bahagian bahagian: 8993

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 40A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 125A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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GP10J-4005EHE3/54
Vishay Semiconductor Diodes Division

GP10J-4005EHE3/54

bahagian bahagian: 133740

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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GL41Y/1
Vishay Semiconductor Diodes Division

GL41Y/1

bahagian bahagian: 114302

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1600V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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VS-240U120D
Vishay Semiconductor Diodes Division

VS-240U120D

bahagian bahagian: 1800

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 320A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.33V @ 750A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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