Menu
MelayuMelayu
Rfqs / order.
0Rfqs / order.

Transistor - IGBT - Modul

  • Rumah
  •  
  • Transistor - IGBT - Modul
VS-GP250SA60S
Vishay Semiconductor Diodes Division

VS-GP250SA60S

bahagian bahagian: 2995

Jenis IGBT: PT, Trench, Konfigurasi: Single, Voltan - Pemecahan Pemancar Pemungut (Maks): 600V, Semasa - Pemungut (Ic) (Maks): 380A, Kuasa - Maks: 893W, Vce (aktif) (Maks) @ Vge, Ic: 1.3V @ 15V, 100A,

Senarai harapan
VS-CPV364M4FPBF
Vishay Semiconductor Diodes Division

VS-CPV364M4FPBF

bahagian bahagian: 1364

Voltan - Pemecahan Pemancar Pemungut (Maks): 600V, Semasa - Pemungut (Ic) (Maks): 27A, Kuasa - Maks: 63W, Vce (aktif) (Maks) @ Vge, Ic: 1.5V @ 15V, 15A,

Senarai harapan
VS-GT105NA120UX
Vishay Semiconductor Diodes Division

VS-GT105NA120UX

bahagian bahagian: 640

Jenis IGBT: Trench, Konfigurasi: Single, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 134A, Kuasa - Maks: 463W,

Senarai harapan
VS-CPV364M4KPBF
Vishay Semiconductor Diodes Division

VS-CPV364M4KPBF

bahagian bahagian: 1291

Konfigurasi: Three Phase Inverter, Voltan - Pemecahan Pemancar Pemungut (Maks): 600V, Semasa - Pemungut (Ic) (Maks): 24A, Kuasa - Maks: 63W, Vce (aktif) (Maks) @ Vge, Ic: 1.8V @ 15V, 24A,

Senarai harapan
VS-GB100TS60NPBF
Vishay Semiconductor Diodes Division

VS-GB100TS60NPBF

bahagian bahagian: 846

Jenis IGBT: NPT, Konfigurasi: Half Bridge, Voltan - Pemecahan Pemancar Pemungut (Maks): 600V, Semasa - Pemungut (Ic) (Maks): 108A, Kuasa - Maks: 390W, Vce (aktif) (Maks) @ Vge, Ic: 2.85V @ 15V, 100A,

Senarai harapan
VS-GA200HS60S1
Vishay Semiconductor Diodes Division

VS-GA200HS60S1

bahagian bahagian: 633

Konfigurasi: Half Bridge, Voltan - Pemecahan Pemancar Pemungut (Maks): 600V, Semasa - Pemungut (Ic) (Maks): 480A, Kuasa - Maks: 830W, Vce (aktif) (Maks) @ Vge, Ic: 1.21V @ 15V, 200A,

Senarai harapan
VS-GA200HS60S1PBF
Vishay Semiconductor Diodes Division

VS-GA200HS60S1PBF

bahagian bahagian: 552

Konfigurasi: Half Bridge, Voltan - Pemecahan Pemancar Pemungut (Maks): 600V, Semasa - Pemungut (Ic) (Maks): 480A, Kuasa - Maks: 830W, Vce (aktif) (Maks) @ Vge, Ic: 1.21V @ 15V, 200A,

Senarai harapan
VS-GB75YF120UT
Vishay Semiconductor Diodes Division

VS-GB75YF120UT

bahagian bahagian: 258

Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 100A, Kuasa - Maks: 480W, Vce (aktif) (Maks) @ Vge, Ic: 4.5V @ 15V, 100A,

Senarai harapan
VS-GT80DA120U
Vishay Semiconductor Diodes Division

VS-GT80DA120U

bahagian bahagian: 976

Jenis IGBT: Trench, Konfigurasi: Single, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 139A, Kuasa - Maks: 658W, Vce (aktif) (Maks) @ Vge, Ic: 2.55V @ 15V, 80A,

Senarai harapan
VS-CPV363M4UPBF
Vishay Semiconductor Diodes Division

VS-CPV363M4UPBF

bahagian bahagian: 1555

Voltan - Pemecahan Pemancar Pemungut (Maks): 600V, Semasa - Pemungut (Ic) (Maks): 13A, Kuasa - Maks: 36W, Vce (aktif) (Maks) @ Vge, Ic: 2.2V @ 15V, 6.8A,

Senarai harapan
VS-GB50YF120N
Vishay Semiconductor Diodes Division

VS-GB50YF120N

bahagian bahagian: 620

Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 66A, Kuasa - Maks: 330W, Vce (aktif) (Maks) @ Vge, Ic: 4.5V @ 15V, 75A,

Senarai harapan
VS-GT180DA120U
Vishay Semiconductor Diodes Division

VS-GT180DA120U

bahagian bahagian: 758

Jenis IGBT: Trench Field Stop, Konfigurasi: Single, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 281A, Kuasa - Maks: 1087W, Vce (aktif) (Maks) @ Vge, Ic: 2.05V @ 15V, 100A,

Senarai harapan
VS-GB70LA60UF
Vishay Semiconductor Diodes Division

VS-GB70LA60UF

bahagian bahagian: 3088

Jenis IGBT: NPT, Konfigurasi: Single, Voltan - Pemecahan Pemancar Pemungut (Maks): 600V, Semasa - Pemungut (Ic) (Maks): 111A, Kuasa - Maks: 447W, Vce (aktif) (Maks) @ Vge, Ic: 2.44V @ 15V, 70A,

Senarai harapan
VS-GT105LA120UX
Vishay Semiconductor Diodes Division

VS-GT105LA120UX

bahagian bahagian: 632

Jenis IGBT: NPT, Konfigurasi: Single, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 134A, Kuasa - Maks: 463W,

Senarai harapan
CPV363M4F
Vishay Semiconductor Diodes Division

CPV363M4F

bahagian bahagian: 427

Konfigurasi: Three Phase Inverter, Voltan - Pemecahan Pemancar Pemungut (Maks): 600V, Semasa - Pemungut (Ic) (Maks): 16A, Kuasa - Maks: 36W, Vce (aktif) (Maks) @ Vge, Ic: 1.63V @ 15V, 16A,

Senarai harapan
VS-GT400TH120N
Vishay Semiconductor Diodes Division

VS-GT400TH120N

bahagian bahagian: 640

Jenis IGBT: Trench, Konfigurasi: Half Bridge, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 600A, Kuasa - Maks: 2119W, Vce (aktif) (Maks) @ Vge, Ic: 2.15V @ 15V, 400A,

Senarai harapan
VS-50MT060WHTAPBF
Vishay Semiconductor Diodes Division

VS-50MT060WHTAPBF

bahagian bahagian: 1286

Konfigurasi: Half Bridge, Voltan - Pemecahan Pemancar Pemungut (Maks): 600V, Semasa - Pemungut (Ic) (Maks): 114A, Kuasa - Maks: 658W, Vce (aktif) (Maks) @ Vge, Ic: 3.2V @ 15V, 100A,

Senarai harapan
VS-GA100TS60SF
Vishay Semiconductor Diodes Division

VS-GA100TS60SF

bahagian bahagian: 662

Jenis IGBT: PT, Konfigurasi: Half Bridge, Voltan - Pemecahan Pemancar Pemungut (Maks): 600V, Semasa - Pemungut (Ic) (Maks): 220A, Kuasa - Maks: 780W, Vce (aktif) (Maks) @ Vge, Ic: 1.28V @ 15V, 100A,

Senarai harapan
VS-GB50LA120UX
Vishay Semiconductor Diodes Division

VS-GB50LA120UX

bahagian bahagian: 3064

Jenis IGBT: NPT, Konfigurasi: Single, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 84A, Kuasa - Maks: 431W, Vce (aktif) (Maks) @ Vge, Ic: 2.8V @ 15V, 50A,

Senarai harapan
VS-GB50NA120UX
Vishay Semiconductor Diodes Division

VS-GB50NA120UX

bahagian bahagian: 3036

Jenis IGBT: NPT, Konfigurasi: Single, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 84A, Kuasa - Maks: 431W, Vce (aktif) (Maks) @ Vge, Ic: 2.8V @ 15V, 50A,

Senarai harapan
VS-GB75LP120N
Vishay Semiconductor Diodes Division

VS-GB75LP120N

bahagian bahagian: 618

Konfigurasi: Single, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 170A, Kuasa - Maks: 658W, Vce (aktif) (Maks) @ Vge, Ic: 1.82V @ 15V, 75A (Typ),

Senarai harapan
VS-GB75YF120N
Vishay Semiconductor Diodes Division

VS-GB75YF120N

bahagian bahagian: 322

Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 100A, Kuasa - Maks: 480W, Vce (aktif) (Maks) @ Vge, Ic: 4.5V @ 15V, 100A,

Senarai harapan
GA400TD25S
Vishay Semiconductor Diodes Division

GA400TD25S

bahagian bahagian: 369

Konfigurasi: Half Bridge, Voltan - Pemecahan Pemancar Pemungut (Maks): 250V, Semasa - Pemungut (Ic) (Maks): 400A, Kuasa - Maks: 1350W, Vce (aktif) (Maks) @ Vge, Ic: 1.6V @ 15V, 400A,

Senarai harapan
VS-GB75DA120UP
Vishay Semiconductor Diodes Division

VS-GB75DA120UP

bahagian bahagian: 581

Jenis IGBT: NPT, Konfigurasi: Single, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Kuasa - Maks: 658W, Vce (aktif) (Maks) @ Vge, Ic: 3.8V @ 15V, 75A,

Senarai harapan
VS-GT75NP120N
Vishay Semiconductor Diodes Division

VS-GT75NP120N

bahagian bahagian: 647

Konfigurasi: Single, Voltan - Pemecahan Pemancar Pemungut (Maks): 1200V, Semasa - Pemungut (Ic) (Maks): 150A, Kuasa - Maks: 446W, Vce (aktif) (Maks) @ Vge, Ic: 2.08V @ 15V, 75A (Typ),

Senarai harapan
VS-CPV362M4UPBF
Vishay Semiconductor Diodes Division

VS-CPV362M4UPBF

bahagian bahagian: 1833

Voltan - Pemecahan Pemancar Pemungut (Maks): 600V, Semasa - Pemungut (Ic) (Maks): 7.2A, Kuasa - Maks: 23W, Vce (aktif) (Maks) @ Vge, Ic: 2.2V @ 15V, 3.9A,

Senarai harapan
GA200SA60S
Vishay Semiconductor Diodes Division

GA200SA60S

bahagian bahagian: 444

Konfigurasi: Single, Voltan - Pemecahan Pemancar Pemungut (Maks): 600V, Semasa - Pemungut (Ic) (Maks): 200A, Kuasa - Maks: 630W, Vce (aktif) (Maks) @ Vge, Ic: 1.3V @ 15V, 100A,

Senarai harapan
GA200SA60U
Vishay Semiconductor Diodes Division

GA200SA60U

bahagian bahagian: 371

Konfigurasi: Single, Voltan - Pemecahan Pemancar Pemungut (Maks): 600V, Semasa - Pemungut (Ic) (Maks): 200A, Kuasa - Maks: 500W, Vce (aktif) (Maks) @ Vge, Ic: 1.9V @ 15V, 100A,

Senarai harapan
VS-GT100DA60U
Vishay Semiconductor Diodes Division

VS-GT100DA60U

bahagian bahagian: 5378

Jenis IGBT: Trench, Konfigurasi: Single, Voltan - Pemecahan Pemancar Pemungut (Maks): 600V, Semasa - Pemungut (Ic) (Maks): 184A, Kuasa - Maks: 577W, Vce (aktif) (Maks) @ Vge, Ic: 2V @ 15V, 100A,

Senarai harapan