Thyristors - SCR | Produk Semikonduktor Diskrit | 21

12TTS08STRR

bahagian bahagian: 4797

Voltan - Keadaan Mati: 800V, Voltan - Pencetus Gerbang (Vgt) (Maks): 1V, Semasa - Pencetus Gerbang (Igt) (Maks): 15mA, Voltan - Keadaan (Vtm) (Maks): 1.2V, Semasa - Keadaan (Ini (AV)) (Maks): 8A, Semasa - Keadaan (Ini (RMS)) (Maksimum): 12.5A,

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Vishay Semiconductor Diodes Division

10TTS08STRL

bahagian bahagian: 7584

Voltan - Keadaan Mati: 800V, Voltan - Pencetus Gerbang (Vgt) (Maks): 1V, Semasa - Pencetus Gerbang (Igt) (Maks): 15mA, Voltan - Keadaan (Vtm) (Maks): 1.15V, Semasa - Keadaan (Ini (AV)) (Maks): 6.5A, Semasa - Keadaan (Ini (RMS)) (Maksimum): 10A,

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Vishay Semiconductor Diodes Division

10TTS08STRR

bahagian bahagian: 7614

Voltan - Keadaan Mati: 800V, Voltan - Pencetus Gerbang (Vgt) (Maks): 1V, Semasa - Pencetus Gerbang (Igt) (Maks): 15mA, Voltan - Keadaan (Vtm) (Maks): 1.15V, Semasa - Keadaan (Ini (AV)) (Maks): 6.5A, Semasa - Keadaan (Ini (RMS)) (Maksimum): 10A,

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Vishay Semiconductor Diodes Division

12TTS08

bahagian bahagian: 7644

Voltan - Keadaan Mati: 800V, Voltan - Pencetus Gerbang (Vgt) (Maks): 1V, Semasa - Pencetus Gerbang (Igt) (Maks): 15mA, Voltan - Keadaan (Vtm) (Maks): 1.2V, Semasa - Keadaan (Ini (AV)) (Maks): 8A, Semasa - Keadaan (Ini (RMS)) (Maksimum): 12.5A,

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Vishay Semiconductor Diodes Division

12TTS08S

bahagian bahagian: 4813

Voltan - Keadaan Mati: 800V, Voltan - Pencetus Gerbang (Vgt) (Maks): 1V, Semasa - Pencetus Gerbang (Igt) (Maks): 15mA, Voltan - Keadaan (Vtm) (Maks): 1.2V, Semasa - Keadaan (Ini (AV)) (Maks): 8A, Semasa - Keadaan (Ini (RMS)) (Maksimum): 12.5A,

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Vishay Semiconductor Diodes Division

10TTS08S

bahagian bahagian: 7583

Voltan - Keadaan Mati: 800V, Voltan - Pencetus Gerbang (Vgt) (Maks): 1V, Semasa - Pencetus Gerbang (Igt) (Maks): 15mA, Voltan - Keadaan (Vtm) (Maks): 1.15V, Semasa - Keadaan (Ini (AV)) (Maks): 6.5A, Semasa - Keadaan (Ini (RMS)) (Maksimum): 10A,

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Vishay Semiconductor Diodes Division

10TTS08

bahagian bahagian: 7620

Voltan - Keadaan Mati: 800V, Voltan - Pencetus Gerbang (Vgt) (Maks): 1V, Semasa - Pencetus Gerbang (Igt) (Maks): 15mA, Voltan - Keadaan (Vtm) (Maks): 1.15V, Semasa - Keadaan (Ini (AV)) (Maks): 6.5A, Semasa - Keadaan (Ini (RMS)) (Maksimum): 10A,

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Vishay Semiconductor Diodes Division

16TTS12STRR

bahagian bahagian: 7665

Voltan - Keadaan Mati: 1.2kV, Voltan - Pencetus Gerbang (Vgt) (Maks): 2V, Semasa - Pencetus Gerbang (Igt) (Maks): 60mA, Voltan - Keadaan (Vtm) (Maks): 1.4V, Semasa - Keadaan (Ini (AV)) (Maks): 10A, Semasa - Keadaan (Ini (RMS)) (Maksimum): 16A,

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Vishay Semiconductor Diodes Division

16TTS12STRL

bahagian bahagian: 7597

Voltan - Keadaan Mati: 1.2kV, Voltan - Pencetus Gerbang (Vgt) (Maks): 2V, Semasa - Pencetus Gerbang (Igt) (Maks): 60mA, Voltan - Keadaan (Vtm) (Maks): 1.4V, Semasa - Keadaan (Ini (AV)) (Maks): 10A, Semasa - Keadaan (Ini (RMS)) (Maksimum): 16A,

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Vishay Semiconductor Diodes Division

16TTS08STRR

bahagian bahagian: 7581

Voltan - Keadaan Mati: 800V, Voltan - Pencetus Gerbang (Vgt) (Maks): 2V, Semasa - Pencetus Gerbang (Igt) (Maks): 60mA, Voltan - Keadaan (Vtm) (Maks): 1.4V, Semasa - Keadaan (Ini (AV)) (Maks): 10A, Semasa - Keadaan (Ini (RMS)) (Maksimum): 16A,

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Vishay Semiconductor Diodes Division

112RKI80

bahagian bahagian: 7616

Voltan - Keadaan Mati: 800V, Voltan - Pencetus Gerbang (Vgt) (Maks): 2V, Semasa - Pencetus Gerbang (Igt) (Maks): 120mA, Voltan - Keadaan (Vtm) (Maks): 1.57V, Semasa - Keadaan (Ini (AV)) (Maks): 110A, Semasa - Keadaan (Ini (RMS)) (Maksimum): 172A,

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Vishay Semiconductor Diodes Division

16TTS08STRL

bahagian bahagian: 7605

Voltan - Keadaan Mati: 800V, Voltan - Pencetus Gerbang (Vgt) (Maks): 2V, Semasa - Pencetus Gerbang (Igt) (Maks): 60mA, Voltan - Keadaan (Vtm) (Maks): 1.4V, Semasa - Keadaan (Ini (AV)) (Maks): 10A, Semasa - Keadaan (Ini (RMS)) (Maksimum): 16A,

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Vishay Semiconductor Diodes Division

112RKI40

bahagian bahagian: 7639

Voltan - Keadaan Mati: 400V, Voltan - Pencetus Gerbang (Vgt) (Maks): 2V, Semasa - Pencetus Gerbang (Igt) (Maks): 120mA, Voltan - Keadaan (Vtm) (Maks): 1.57V, Semasa - Keadaan (Ini (AV)) (Maks): 110A, Semasa - Keadaan (Ini (RMS)) (Maksimum): 172A,

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Vishay Semiconductor Diodes Division

16TTS12FP

bahagian bahagian: 7603

Voltan - Keadaan Mati: 1.2kV, Voltan - Pencetus Gerbang (Vgt) (Maks): 2V, Semasa - Pencetus Gerbang (Igt) (Maks): 60mA, Voltan - Keadaan (Vtm) (Maks): 1.4V, Semasa - Keadaan (Ini (AV)) (Maks): 10A, Semasa - Keadaan (Ini (RMS)) (Maksimum): 16A,

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Vishay Semiconductor Diodes Division

16TTS08FP

bahagian bahagian: 7640

Voltan - Keadaan Mati: 800V, Voltan - Pencetus Gerbang (Vgt) (Maks): 2V, Semasa - Pencetus Gerbang (Igt) (Maks): 60mA, Voltan - Keadaan (Vtm) (Maks): 1.4V, Semasa - Keadaan (Ini (AV)) (Maks): 10A, Semasa - Keadaan (Ini (RMS)) (Maksimum): 16A,

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Vishay Semiconductor Diodes Division

16TTS12S

bahagian bahagian: 7612

Voltan - Keadaan Mati: 1.2kV, Voltan - Pencetus Gerbang (Vgt) (Maks): 2V, Semasa - Pencetus Gerbang (Igt) (Maks): 60mA, Voltan - Keadaan (Vtm) (Maks): 1.4V, Semasa - Keadaan (Ini (AV)) (Maks): 10A, Semasa - Keadaan (Ini (RMS)) (Maksimum): 16A,

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Vishay Semiconductor Diodes Division

16TTS12

bahagian bahagian: 7561

Voltan - Keadaan Mati: 1.2kV, Voltan - Pencetus Gerbang (Vgt) (Maks): 2V, Semasa - Pencetus Gerbang (Igt) (Maks): 60mA, Voltan - Keadaan (Vtm) (Maks): 1.4V, Semasa - Keadaan (Ini (AV)) (Maks): 10A, Semasa - Keadaan (Ini (RMS)) (Maksimum): 16A,

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Vishay Semiconductor Diodes Division

16TTS08S

bahagian bahagian: 7567

Voltan - Keadaan Mati: 800V, Voltan - Pencetus Gerbang (Vgt) (Maks): 2V, Semasa - Pencetus Gerbang (Igt) (Maks): 60mA, Voltan - Keadaan (Vtm) (Maks): 1.4V, Semasa - Keadaan (Ini (AV)) (Maks): 10A, Semasa - Keadaan (Ini (RMS)) (Maksimum): 16A,

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Vishay Semiconductor Diodes Division

16TTS08

bahagian bahagian: 7649

Voltan - Keadaan Mati: 800V, Voltan - Pencetus Gerbang (Vgt) (Maks): 2V, Semasa - Pencetus Gerbang (Igt) (Maks): 60mA, Voltan - Keadaan (Vtm) (Maks): 1.4V, Semasa - Keadaan (Ini (AV)) (Maks): 10A, Semasa - Keadaan (Ini (RMS)) (Maksimum): 16A,

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Vishay Semiconductor Diodes Division

12TTS08STRL

bahagian bahagian: 7552

Voltan - Keadaan Mati: 800V, Voltan - Pencetus Gerbang (Vgt) (Maks): 1V, Semasa - Pencetus Gerbang (Igt) (Maks): 15mA, Voltan - Keadaan (Vtm) (Maks): 1.2V, Semasa - Keadaan (Ini (AV)) (Maks): 8A, Semasa - Keadaan (Ini (RMS)) (Maksimum): 12.5A,

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Vishay Semiconductor Diodes Division

2N5204

bahagian bahagian: 6353

Voltan - Keadaan Mati: 600V, Voltan - Pencetus Gerbang (Vgt) (Maks): 2V, Semasa - Pencetus Gerbang (Igt) (Maks): 40mA, Voltan - Keadaan (Vtm) (Maks): 2.3V, Semasa - Keadaan (Ini (AV)) (Maks): 22A, Semasa - Keadaan (Ini (RMS)) (Maksimum): 35A,

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Vishay Semiconductor Diodes Division

25TTS12STRR

bahagian bahagian: 7636

Voltan - Keadaan Mati: 1.2kV, Voltan - Pencetus Gerbang (Vgt) (Maks): 2V, Semasa - Pencetus Gerbang (Igt) (Maks): 45mA, Voltan - Keadaan (Vtm) (Maks): 1.25V, Semasa - Keadaan (Ini (AV)) (Maks): 16A, Semasa - Keadaan (Ini (RMS)) (Maksimum): 25A,

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Vishay Semiconductor Diodes Division

25TTS12STRL

bahagian bahagian: 7571

Voltan - Keadaan Mati: 1.2kV, Voltan - Pencetus Gerbang (Vgt) (Maks): 2V, Semasa - Pencetus Gerbang (Igt) (Maks): 45mA, Voltan - Keadaan (Vtm) (Maks): 1.25V, Semasa - Keadaan (Ini (AV)) (Maks): 16A, Semasa - Keadaan (Ini (RMS)) (Maksimum): 25A,

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Vishay Semiconductor Diodes Division

25TTS08STRR

bahagian bahagian: 7576

Voltan - Keadaan Mati: 800V, Voltan - Pencetus Gerbang (Vgt) (Maks): 2V, Semasa - Pencetus Gerbang (Igt) (Maks): 45mA, Voltan - Keadaan (Vtm) (Maks): 1.25V, Semasa - Keadaan (Ini (AV)) (Maks): 16A, Semasa - Keadaan (Ini (RMS)) (Maksimum): 25A,

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Vishay Semiconductor Diodes Division

25TTS12FP

bahagian bahagian: 7581

Voltan - Keadaan Mati: 1.2kV, Voltan - Pencetus Gerbang (Vgt) (Maks): 2V, Semasa - Pencetus Gerbang (Igt) (Maks): 45mA, Voltan - Keadaan (Vtm) (Maks): 1.25V, Semasa - Keadaan (Ini (AV)) (Maks): 16A, Semasa - Keadaan (Ini (RMS)) (Maksimum): 25A,

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Vishay Semiconductor Diodes Division

25TTS12S

bahagian bahagian: 7613

Voltan - Keadaan Mati: 1.2kV, Voltan - Pencetus Gerbang (Vgt) (Maks): 2V, Semasa - Pencetus Gerbang (Igt) (Maks): 45mA, Voltan - Keadaan (Vtm) (Maks): 1.25V, Semasa - Keadaan (Ini (AV)) (Maks): 16A, Semasa - Keadaan (Ini (RMS)) (Maksimum): 25A,

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Vishay Semiconductor Diodes Division

25TTS08STRL

bahagian bahagian: 7660

Voltan - Keadaan Mati: 800V, Voltan - Pencetus Gerbang (Vgt) (Maks): 2V, Semasa - Pencetus Gerbang (Igt) (Maks): 45mA, Voltan - Keadaan (Vtm) (Maks): 1.25V, Semasa - Keadaan (Ini (AV)) (Maks): 16A, Semasa - Keadaan (Ini (RMS)) (Maksimum): 25A,

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Vishay Semiconductor Diodes Division

25TTS12

bahagian bahagian: 7607

Voltan - Keadaan Mati: 1.2kV, Voltan - Pencetus Gerbang (Vgt) (Maks): 2V, Semasa - Pencetus Gerbang (Igt) (Maks): 45mA, Voltan - Keadaan (Vtm) (Maks): 1.25V, Semasa - Keadaan (Ini (AV)) (Maks): 16A, Semasa - Keadaan (Ini (RMS)) (Maksimum): 25A,

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Vishay Semiconductor Diodes Division

25TTS08FP

bahagian bahagian: 7638

Voltan - Keadaan Mati: 800V, Voltan - Pencetus Gerbang (Vgt) (Maks): 2V, Semasa - Pencetus Gerbang (Igt) (Maks): 45mA, Voltan - Keadaan (Vtm) (Maks): 1.25V, Semasa - Keadaan (Ini (AV)) (Maks): 16A, Semasa - Keadaan (Ini (RMS)) (Maksimum): 25A,

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Vishay Semiconductor Diodes Division

25TTS08S

bahagian bahagian: 7653

Voltan - Keadaan Mati: 800V, Voltan - Pencetus Gerbang (Vgt) (Maks): 2V, Semasa - Pencetus Gerbang (Igt) (Maks): 45mA, Voltan - Keadaan (Vtm) (Maks): 1.25V, Semasa - Keadaan (Ini (AV)) (Maks): 16A, Semasa - Keadaan (Ini (RMS)) (Maksimum): 25A,

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Vishay Semiconductor Diodes Division

25TTS08

bahagian bahagian: 7614

Voltan - Keadaan Mati: 800V, Voltan - Pencetus Gerbang (Vgt) (Maks): 2V, Semasa - Pencetus Gerbang (Igt) (Maks): 45mA, Voltan - Keadaan (Vtm) (Maks): 1.25V, Semasa - Keadaan (Ini (AV)) (Maks): 16A, Semasa - Keadaan (Ini (RMS)) (Maksimum): 25A,

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Vishay Semiconductor Diodes Division

30TPS12

bahagian bahagian: 7665

Voltan - Keadaan Mati: 1.2kV, Voltan - Pencetus Gerbang (Vgt) (Maks): 2V, Semasa - Pencetus Gerbang (Igt) (Maks): 45mA, Voltan - Keadaan (Vtm) (Maks): 1.3V, Semasa - Keadaan (Ini (AV)) (Maks): 20A, Semasa - Keadaan (Ini (RMS)) (Maksimum): 30A,

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Vishay Semiconductor Diodes Division

30TPS08

bahagian bahagian: 4828

Voltan - Keadaan Mati: 800V, Voltan - Pencetus Gerbang (Vgt) (Maks): 2V, Semasa - Pencetus Gerbang (Igt) (Maks): 45mA, Voltan - Keadaan (Vtm) (Maks): 1.3V, Semasa - Keadaan (Ini (AV)) (Maks): 20A, Semasa - Keadaan (Ini (RMS)) (Maksimum): 30A,

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Vishay Semiconductor Diodes Division

40TPS08A

bahagian bahagian: 4854

Voltan - Keadaan Mati: 800V, Voltan - Pencetus Gerbang (Vgt) (Maks): 2.5V, Semasa - Pencetus Gerbang (Igt) (Maks): 150mA, Voltan - Keadaan (Vtm) (Maks): 1.85V, Semasa - Keadaan (Ini (AV)) (Maks): 35A, Semasa - Keadaan (Ini (RMS)) (Maksimum): 55A,

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Vishay Semiconductor Diodes Division

40TPS12A

bahagian bahagian: 4839

Voltan - Keadaan Mati: 1.2kV, Voltan - Pencetus Gerbang (Vgt) (Maks): 2.5V, Semasa - Pencetus Gerbang (Igt) (Maks): 150mA, Voltan - Keadaan (Vtm) (Maks): 1.85V, Semasa - Keadaan (Ini (AV)) (Maks): 35A, Semasa - Keadaan (Ini (RMS)) (Maksimum): 55A,

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Vishay Semiconductor Diodes Division

40TPS08

bahagian bahagian: 7657

Voltan - Keadaan Mati: 800V, Voltan - Pencetus Gerbang (Vgt) (Maks): 2.5V, Semasa - Pencetus Gerbang (Igt) (Maks): 150mA, Voltan - Keadaan (Vtm) (Maks): 1.85V, Semasa - Keadaan (Ini (AV)) (Maks): 35A, Semasa - Keadaan (Ini (RMS)) (Maksimum): 55A,

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