Transistor - FET, MOSFET - Bujang

3LP01SS-TL-EX

bahagian bahagian: 2251

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4V, Rds On (Maks) @ Id, Vgs: 10.4 Ohm @ 50mA, 4V,

3LN01C-TB-E

bahagian bahagian: 130398

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 150mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4V, Rds On (Maks) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V,

3LP01SS-TL-E

bahagian bahagian: 174489

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4V, Rds On (Maks) @ Id, Vgs: 10.4 Ohm @ 50mA, 4V,

3LP01S-TL-E

bahagian bahagian: 1963

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4V, Rds On (Maks) @ Id, Vgs: 10.4 Ohm @ 50mA, 4V,

3LN01SS-TL-E

bahagian bahagian: 161259

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 150mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4V, Rds On (Maks) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V,

3LN01M-TL-H

bahagian bahagian: 137899

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 150mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4V, Rds On (Maks) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V,

3LN01M-TL-E

bahagian bahagian: 133843

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 150mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4V, Rds On (Maks) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V,

3LP01M-TL-H

bahagian bahagian: 111476

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4V, Rds On (Maks) @ Id, Vgs: 10.4 Ohm @ 50mA, 4V,

3LP01C-TB-E

bahagian bahagian: 1924

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4V, Rds On (Maks) @ Id, Vgs: 10.4 Ohm @ 50mA, 4V,

3LN01S-TL-E

bahagian bahagian: 1979

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 150mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4V, Rds On (Maks) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V,

3LP01S-K-TL-E

bahagian bahagian: 1806

3LP01M-TL-E

bahagian bahagian: 137438

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4V, Rds On (Maks) @ Id, Vgs: 10.4 Ohm @ 50mA, 4V,

3LP01C-TB-H

bahagian bahagian: 1190

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4V, Rds On (Maks) @ Id, Vgs: 10.4 Ohm @ 50mA, 4V,

3LP01SS-TL-H

bahagian bahagian: 1133

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4V, Rds On (Maks) @ Id, Vgs: 10.4 Ohm @ 50mA, 4V,

3LN01SS-TL-H

bahagian bahagian: 1184

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 150mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4V, Rds On (Maks) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V,

3LN01C-TB-H

bahagian bahagian: 1110

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 150mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4V, Rds On (Maks) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V,

3LN01S-K-TL-E

bahagian bahagian: 9511

5LN01C-TB-EX

bahagian bahagian: 2353

5HN01C-TB-EX

bahagian bahagian: 2210

5HP01M-TL-H

bahagian bahagian: 110639

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 70mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 22 Ohm @ 40mA, 10V,

5LN01M-TL-H

bahagian bahagian: 114622

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4V, Rds On (Maks) @ Id, Vgs: 7.8 Ohm @ 50mA, 4V,

5HP01S-TL-E

bahagian bahagian: 1973

5HP01SS-TL-E

bahagian bahagian: 142336

5HP01SS-TL-H

bahagian bahagian: 108914

5HP01C-TB-H

bahagian bahagian: 157648

5HP01M-TL-E

bahagian bahagian: 1963

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 70mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 22 Ohm @ 40mA, 10V,

5HN01S-TL-E

bahagian bahagian: 1979

5HP01C-TB-E

bahagian bahagian: 6246

5HN01SS-TL-H

bahagian bahagian: 146833

5HN01SS-TL-E

bahagian bahagian: 154338

5HN01M-TL-E

bahagian bahagian: 1932

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 7.5 Ohm @ 50mA, 10V,

5HN01M-TL-H

bahagian bahagian: 102036

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 7.5 Ohm @ 50mA, 10V,

3N164

bahagian bahagian: 1783

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 50mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 20V, Rds On (Maks) @ Id, Vgs: 300 Ohm @ 100µA, 20V,

3N163-E3

bahagian bahagian: 1851

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 50mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 20V, Rds On (Maks) @ Id, Vgs: 250 Ohm @ 100µA, 20V,

3N163

bahagian bahagian: 1830

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 50mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 20V, Rds On (Maks) @ Id, Vgs: 250 Ohm @ 100µA, 20V,

3N163-2

bahagian bahagian: 6254

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 50mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 20V, Rds On (Maks) @ Id, Vgs: 250 Ohm @ 100µA, 20V,