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Transistor - FET, MOSFET - Bujang

BUK7C1R8-60EJ
NXP USA Inc.

BUK7C1R8-60EJ

bahagian bahagian: 6258

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V,

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BUK7C1R4-40EJ
NXP USA Inc.

BUK7C1R4-40EJ

bahagian bahagian: 2529

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V,

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BUK7C1R2-40EJ
NXP USA Inc.

BUK7C1R2-40EJ

bahagian bahagian: 2518

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V,

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BUK9Y9R9-80E,115
NXP USA Inc.

BUK9Y9R9-80E,115

bahagian bahagian: 2547

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V,

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BUK9Y98-80E,115
NXP USA Inc.

BUK9Y98-80E,115

bahagian bahagian: 2588

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V,

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BUK9Y7R8-80E,115
NXP USA Inc.

BUK9Y7R8-80E,115

bahagian bahagian: 2582

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V,

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BUK9E1R8-40E,127
NXP USA Inc.

BUK9E1R8-40E,127

bahagian bahagian: 2573

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 1.7 mOhm @ 25A, 10V,

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BUK9E8R5-40E,127
NXP USA Inc.

BUK9E8R5-40E,127

bahagian bahagian: 6339

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 6.6 mOhm @ 20A, 10V,

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BUK9E6R1-100E,127
NXP USA Inc.

BUK9E6R1-100E,127

bahagian bahagian: 2510

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 5.9 mOhm @ 25A, 10V,

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BUK9E4R9-60E,127
NXP USA Inc.

BUK9E4R9-60E,127

bahagian bahagian: 2556

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 4.5 mOhm @ 25A, 10V,

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BUK9E4R4-80E,127
NXP USA Inc.

BUK9E4R4-80E,127

bahagian bahagian: 2545

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 4.2 mOhm @ 25A, 10V,

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BUK9E3R7-60E,127
NXP USA Inc.

BUK9E3R7-60E,127

bahagian bahagian: 2588

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 3.4 mOhm @ 25A, 10V,

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BUK9E2R8-60E,127
NXP USA Inc.

BUK9E2R8-60E,127

bahagian bahagian: 2547

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 2.6 mOhm @ 25A, 10V,

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BUK9E3R2-40E,127
NXP USA Inc.

BUK9E3R2-40E,127

bahagian bahagian: 2570

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 2.8 mOhm @ 25A, 10V,

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BUK9E1R9-40E,127
NXP USA Inc.

BUK9E1R9-40E,127

bahagian bahagian: 2502

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V,

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BUK9E2R3-40E,127
NXP USA Inc.

BUK9E2R3-40E,127

bahagian bahagian: 2570

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 2.2 mOhm @ 25A, 10V,

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BUK9E1R6-30E,127
NXP USA Inc.

BUK9E1R6-30E,127

bahagian bahagian: 2576

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 1.4 mOhm @ 25A, 10V,

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BUK9E15-60E,127
NXP USA Inc.

BUK9E15-60E,127

bahagian bahagian: 2588

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 54A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 13 mOhm @ 15A, 10V,

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BUK956R1-100E,127
NXP USA Inc.

BUK956R1-100E,127

bahagian bahagian: 6333

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 5.9 mOhm @ 25A, 10V,

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BUK958R5-40E,127
NXP USA Inc.

BUK958R5-40E,127

bahagian bahagian: 2510

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 6.6 mOhm @ 20A, 10V,

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BUK954R4-80E,127
NXP USA Inc.

BUK954R4-80E,127

bahagian bahagian: 2512

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 4.2 mOhm @ 25A, 10V,

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BUK952R8-60E,127
NXP USA Inc.

BUK952R8-60E,127

bahagian bahagian: 2572

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 2.6 mOhm @ 25A, 10V,

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BUK952R3-40E,127
NXP USA Inc.

BUK952R3-40E,127

bahagian bahagian: 6262

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 2.2 mOhm @ 25A, 10V,

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BUK951R9-40E,127
NXP USA Inc.

BUK951R9-40E,127

bahagian bahagian: 2587

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 1.7 mOhm @ 25A, 10V,

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BUK951R6-30E,127
NXP USA Inc.

BUK951R6-30E,127

bahagian bahagian: 6281

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 1.4 mOhm @ 25A, 10V,

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BUK7E4R0-80E,127
NXP USA Inc.

BUK7E4R0-80E,127

bahagian bahagian: 2546

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 4 mOhm @ 25A, 10V,

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BUK9515-60E,127
NXP USA Inc.

BUK9515-60E,127

bahagian bahagian: 2529

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 54A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 13 mOhm @ 15A, 10V,

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BUK7E1R6-30E,127
NXP USA Inc.

BUK7E1R6-30E,127

bahagian bahagian: 6300

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.6 mOhm @ 25A, 10V,

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BUK753R5-60E,127
NXP USA Inc.

BUK753R5-60E,127

bahagian bahagian: 2561

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 3.5 mOhm @ 25A, 10V,

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BUK751R6-30E,127
NXP USA Inc.

BUK751R6-30E,127

bahagian bahagian: 6316

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.6 mOhm @ 25A, 10V,

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BUK7Y08-40B/C,115
NXP USA Inc.

BUK7Y08-40B/C,115

bahagian bahagian: 2544

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 8 mOhm @ 25A, 10V,

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BUK7Y25-40B/C,115
NXP USA Inc.

BUK7Y25-40B/C,115

bahagian bahagian: 2544

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 35.3A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 20A, 10V,

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BUK655R0-75C,127
NXP USA Inc.

BUK655R0-75C,127

bahagian bahagian: 2509

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 75V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 5.3 mOhm @ 25A, 10V,

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BUK654R6-55C,127
NXP USA Inc.

BUK654R6-55C,127

bahagian bahagian: 2550

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 5.4 mOhm @ 25A, 10V,

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BUK653R7-30C,127
NXP USA Inc.

BUK653R7-30C,127

bahagian bahagian: 2483

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3.9 mOhm @ 25A, 10V,

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BUK654R0-75C,127
NXP USA Inc.

BUK654R0-75C,127

bahagian bahagian: 2520

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 75V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 4.2 mOhm @ 25A, 10V,

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