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Transistor - FET, MOSFET - Bujang

BS170ZL1G
ON Semiconductor

BS170ZL1G

bahagian bahagian: 864

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 500mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 5 Ohm @ 200mA, 10V,

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BS170RLRMG
ON Semiconductor

BS170RLRMG

bahagian bahagian: 846

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 500mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 5 Ohm @ 200mA, 10V,

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BUK9E04-40A,127
Nexperia USA Inc.

BUK9E04-40A,127

bahagian bahagian: 80909

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.3V, 10V, Rds On (Maks) @ Id, Vgs: 4 mOhm @ 25A, 10V,

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BUK7610-100B,118
Nexperia USA Inc.

BUK7610-100B,118

bahagian bahagian: 61580

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 25A, 10V,

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BUK7611-55A,118
Nexperia USA Inc.

BUK7611-55A,118

bahagian bahagian: 106351

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 11 mOhm @ 25A, 10V,

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BUK7620-100A,118
Nexperia USA Inc.

BUK7620-100A,118

bahagian bahagian: 81957

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 63A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 25A, 10V,

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BUK9620-55A,118
Nexperia USA Inc.

BUK9620-55A,118

bahagian bahagian: 145622

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 54A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 25A, 10V,

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BUK764R0-55B,118
Nexperia USA Inc.

BUK764R0-55B,118

bahagian bahagian: 61594

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 4 mOhm @ 25A, 10V,

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BUK664R4-55C,118
Nexperia USA Inc.

BUK664R4-55C,118

bahagian bahagian: 42132

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 4.9 mOhm @ 25A, 10V,

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BSS7728NL6327HTSA1
Infineon Technologies

BSS7728NL6327HTSA1

bahagian bahagian: 6115

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 200mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 5 Ohm @ 500mA, 10V,

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BSS84PL6433HTMA1
Infineon Technologies

BSS84PL6433HTMA1

bahagian bahagian: 768

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 170mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 8 Ohm @ 170mA, 10V,

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BSS670S2LL6327HTSA1
Infineon Technologies

BSS670S2LL6327HTSA1

bahagian bahagian: 5631

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 540mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 650 mOhm @ 270mA, 10V,

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BSS308PEL6327HTSA1
Infineon Technologies

BSS308PEL6327HTSA1

bahagian bahagian: 747

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 2A, 10V,

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BSS316NL6327HTSA1
Infineon Technologies

BSS316NL6327HTSA1

bahagian bahagian: 804

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.4A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 160 mOhm @ 1.4A, 10V,

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BSS214NW L6327
Infineon Technologies

BSS214NW L6327

bahagian bahagian: 6119

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V,

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BSS306NL6327HTSA1
Infineon Technologies

BSS306NL6327HTSA1

bahagian bahagian: 6076

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.3A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 57 mOhm @ 2.3A, 10V,

Bersenang-senang
BSS214NL6327HTSA1
Infineon Technologies

BSS214NL6327HTSA1

bahagian bahagian: 803

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V,

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BSS209PW L6327
Infineon Technologies

BSS209PW L6327

bahagian bahagian: 817

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 580mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 550 mOhm @ 580mA, 4.5V,

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BSS169L6327HTSA1
Infineon Technologies

BSS169L6327HTSA1

bahagian bahagian: 722

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 170mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 0V, 10V, Rds On (Maks) @ Id, Vgs: 6 Ohm @ 170mA, 10V,

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BSS159NL6327HTSA1
Infineon Technologies

BSS159NL6327HTSA1

bahagian bahagian: 719

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 230mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 0V, 10V, Rds On (Maks) @ Id, Vgs: 3.5 Ohm @ 160mA, 10V,

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BSS139L6327HTSA1
Infineon Technologies

BSS139L6327HTSA1

bahagian bahagian: 783

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 250V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 0V, 10V, Rds On (Maks) @ Id, Vgs: 14 Ohm @ 0.1mA, 10V,

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BSS139L6906HTSA1
Infineon Technologies

BSS139L6906HTSA1

bahagian bahagian: 765

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 250V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 0V, 10V, Rds On (Maks) @ Id, Vgs: 14 Ohm @ 0.1mA, 10V,

Bersenang-senang
BSS138W L6327
Infineon Technologies

BSS138W L6327

bahagian bahagian: 784

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 280mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V,

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BSS138W L6433
Infineon Technologies

BSS138W L6433

bahagian bahagian: 726

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 280mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V,

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BSS127L6327HTSA1
Infineon Technologies

BSS127L6327HTSA1

bahagian bahagian: 810

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 21mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 500 Ohm @ 16mA, 10V,

Bersenang-senang
BSS138NL6433HTMA1
Infineon Technologies

BSS138NL6433HTMA1

bahagian bahagian: 726

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 230mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3.5 Ohm @ 230mA, 10V,

Bersenang-senang
BSS126L6327HTSA1
Infineon Technologies

BSS126L6327HTSA1

bahagian bahagian: 754

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 21mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 0V, 10V, Rds On (Maks) @ Id, Vgs: 500 Ohm @ 16mA, 10V,

Bersenang-senang
BSS126L6906HTSA1
Infineon Technologies

BSS126L6906HTSA1

bahagian bahagian: 769

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 21mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 0V, 10V, Rds On (Maks) @ Id, Vgs: 500 Ohm @ 16mA, 10V,

Bersenang-senang
BSR92PL6327HTSA1
Infineon Technologies

BSR92PL6327HTSA1

bahagian bahagian: 734

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 250V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 140mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.8V, 10V, Rds On (Maks) @ Id, Vgs: 11 Ohm @ 140mA, 10V,

Bersenang-senang
BSS119L6327HTSA1
Infineon Technologies

BSS119L6327HTSA1

bahagian bahagian: 792

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 170mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 6 Ohm @ 170mA, 10V,

Bersenang-senang
BSR316PL6327HTSA1
Infineon Technologies

BSR316PL6327HTSA1

bahagian bahagian: 775

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 360mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 1.8 Ohm @ 360mA, 10V,

Bersenang-senang
BSP322PL6327HTSA1
Infineon Technologies

BSP322PL6327HTSA1

bahagian bahagian: 811

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 800 mOhm @ 1A, 10V,

Bersenang-senang
BSP321PL6327HTSA1
Infineon Technologies

BSP321PL6327HTSA1

bahagian bahagian: 714

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 980mA (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 900 mOhm @ 980mA, 10V,

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BSF045N03MQ3 G
Infineon Technologies

BSF045N03MQ3 G

bahagian bahagian: 777

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 18A (Ta), 63A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 4.5 mOhm @ 20A, 10V,

Bersenang-senang
BSC152N10NSFGATMA1
Infineon Technologies

BSC152N10NSFGATMA1

bahagian bahagian: 801

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.4A (Ta), 63A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 15.2 mOhm @ 25A, 10V,

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BSP89H6327XTSA1
Infineon Technologies

BSP89H6327XTSA1

bahagian bahagian: 183471

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 240V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 350mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 6 Ohm @ 350mA, 10V,

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