Transistor - FET, MOSFET - RF

BF1108/L,215

bahagian bahagian: 6393

Jenis Transistor: N-Channel, Peringkat Semasa: 10mA,

BLC8G27LS-245AVJ

bahagian bahagian: 6372

Jenis Transistor: LDMOS (Dual), Common Source, Kekerapan: 2.5GHz ~ 2.69GHz, Keuntungan: 14.5dB, Voltan - Ujian: 28V,

BLC8G24LS-240AVU

bahagian bahagian: 6425

Jenis Transistor: LDMOS (Dual), Kekerapan: 2.3GHz ~ 2.4GHz, Keuntungan: 15dB, Voltan - Ujian: 30V,

BLC8G24LS-240AVJ

bahagian bahagian: 6366

Jenis Transistor: LDMOS (Dual), Kekerapan: 2.3GHz ~ 2.4GHz, Keuntungan: 15dB, Voltan - Ujian: 30V,

BLF8G22LS-310AVU

bahagian bahagian: 4663

BLF8G20LS-400PVQ

bahagian bahagian: 6387

Jenis Transistor: LDMOS (Dual), Kekerapan: 1.81GHz ~ 1.88GHz, Keuntungan: 19dB, Voltan - Ujian: 28V,

BLP8G10S-45PJ

bahagian bahagian: 6388

Jenis Transistor: LDMOS (Dual), Kekerapan: 952.5MHz ~ 957.5MHz, Keuntungan: 20.8dB, Voltan - Ujian: 28V,

BLP8G10S-45PGJ

bahagian bahagian: 6401

Jenis Transistor: LDMOS, Kekerapan: 700MHz ~ 1GHz, Keuntungan: 21dB,

BLP7G07S-140P,118

bahagian bahagian: 4657

Jenis Transistor: LDMOS (Dual), Kekerapan: 700MHz ~ 1GHz, Keuntungan: 20.6dB, Voltan - Ujian: 28V,

BLP7G22-10,135

bahagian bahagian: 6412

Jenis Transistor: LDMOS, Kekerapan: 700MHz ~ 2.2GHz, Keuntungan: 27dB, Voltan - Ujian: 28V,

BLF8G22L-160BV,112

bahagian bahagian: 6368

BLF6G27LS-50BN,118

bahagian bahagian: 6383

Jenis Transistor: LDMOS (Dual), Kekerapan: 2.5GHz ~ 2.7GHz, Keuntungan: 16.5dB, Voltan - Ujian: 28V, Peringkat Semasa: 12A,

BLF6G27LS-50BN,112

bahagian bahagian: 4712

Jenis Transistor: LDMOS (Dual), Kekerapan: 2.5GHz ~ 2.7GHz, Keuntungan: 16.5dB, Voltan - Ujian: 28V, Peringkat Semasa: 12A,

BLC6G22LS-75,112

bahagian bahagian: 6367

Jenis Transistor: LDMOS, Kekerapan: 2.11GHz ~ 2.17GHz, Keuntungan: 18.5dB, Voltan - Ujian: 28V, Peringkat Semasa: 18A,

BLF6G27LS-100,118

bahagian bahagian: 4692

Jenis Transistor: LDMOS, Kekerapan: 2.5GHz ~ 2.7GHz, Keuntungan: 17dB, Voltan - Ujian: 28V, Peringkat Semasa: 29A,

BF909R,235

bahagian bahagian: 6415

Jenis Transistor: N-Channel Dual Gate, Kekerapan: 800MHz, Voltan - Ujian: 5V, Peringkat Semasa: 40mA, Gambar Kebisingan: 2dB,

BF904WR,135

bahagian bahagian: 6390

Jenis Transistor: N-Channel Dual Gate, Kekerapan: 200MHz, Voltan - Ujian: 5V, Peringkat Semasa: 30mA, Gambar Kebisingan: 1dB,

BF908R,235

bahagian bahagian: 6343

Jenis Transistor: N-Channel Dual Gate, Kekerapan: 200MHz, Voltan - Ujian: 8V, Peringkat Semasa: 40mA, Gambar Kebisingan: 0.6dB,

BF512,235

bahagian bahagian: 108169

Jenis Transistor: N-Channel JFET, Kekerapan: 100MHz, Voltan - Ujian: 10V, Peringkat Semasa: 30mA, Gambar Kebisingan: 1.5dB,

BF245A,126

bahagian bahagian: 6378

Jenis Transistor: N-Channel JFET, Kekerapan: 100MHz, Voltan - Ujian: 15V, Peringkat Semasa: 6.5mA, Gambar Kebisingan: 1.5dB,

BF1107,235

bahagian bahagian: 170319

Jenis Transistor: N-Channel, Peringkat Semasa: 10mA,

BF1108R,235

bahagian bahagian: 110637

Jenis Transistor: N-Channel, Peringkat Semasa: 10mA,

BF1101WR,135

bahagian bahagian: 6356

Jenis Transistor: N-Channel Dual Gate, Kekerapan: 800MHz, Voltan - Ujian: 5V, Peringkat Semasa: 30mA, Gambar Kebisingan: 1.7dB,

BLF6G20S-230PRN:11

bahagian bahagian: 6401

Jenis Transistor: LDMOS, Kekerapan: 1.8GHz ~ 1.88GHz, Keuntungan: 17.5dB, Voltan - Ujian: 28V,

BLF6G24-180PN,112

bahagian bahagian: 6374

Jenis Transistor: LDMOS, Kekerapan: 2GHz ~ 2.2GHz, Keuntungan: 17.5dB,

BLF6G20-230P

bahagian bahagian: 6380

Jenis Transistor: LDMOS, Kekerapan: 1.8GHz, Keuntungan: 16.5dB, Voltan - Ujian: 28V, Peringkat Semasa: 5µA,

BLF6G10LS-200,118

bahagian bahagian: 6318

Jenis Transistor: LDMOS, Kekerapan: 871.5MHz, Keuntungan: 20.2dB, Voltan - Ujian: 28V, Peringkat Semasa: 49A,

BLF6G10LS-200,112

bahagian bahagian: 6300

Jenis Transistor: LDMOS, Kekerapan: 871.5MHz, Keuntungan: 20.2dB, Voltan - Ujian: 28V, Peringkat Semasa: 49A,

BLF4G10-160,112

bahagian bahagian: 6318

Jenis Transistor: LDMOS, Kekerapan: 894MHz, Keuntungan: 19.7dB, Voltan - Ujian: 28V, Peringkat Semasa: 15A,

BLF1820-90,112

bahagian bahagian: 6275

Jenis Transistor: LDMOS, Kekerapan: 2GHz, Keuntungan: 11dB, Voltan - Ujian: 26V, Peringkat Semasa: 12A,

BF909AWR,115

bahagian bahagian: 6280

Jenis Transistor: N-Channel Dual Gate, Kekerapan: 800MHz, Voltan - Ujian: 5V, Peringkat Semasa: 40mA, Gambar Kebisingan: 2dB,

BF904AWR,115

bahagian bahagian: 4650

Jenis Transistor: N-Channel Dual Gate, Kekerapan: 200MHz, Voltan - Ujian: 5V, Peringkat Semasa: 30mA, Gambar Kebisingan: 1dB,

BF245C,112

bahagian bahagian: 6262

Jenis Transistor: N-Channel JFET, Kekerapan: 100MHz, Voltan - Ujian: 15V, Peringkat Semasa: 25mA, Gambar Kebisingan: 1.5dB,

BF245B,126

bahagian bahagian: 4655

Jenis Transistor: N-Channel JFET, Kekerapan: 100MHz, Voltan - Ujian: 15V, Peringkat Semasa: 15mA, Gambar Kebisingan: 1.5dB,

BF245B,112

bahagian bahagian: 6302

Jenis Transistor: N-Channel JFET, Kekerapan: 100MHz, Voltan - Ujian: 15V, Peringkat Semasa: 15mA, Gambar Kebisingan: 1.5dB,

BF245A,112

bahagian bahagian: 6264

Jenis Transistor: N-Channel JFET, Kekerapan: 100MHz, Voltan - Ujian: 15V, Peringkat Semasa: 6.5mA, Gambar Kebisingan: 1.5dB,