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Dioda - Penyearah - Susunan

MBRD660CTG
ON Semiconductor

MBRD660CTG

bahagian bahagian: 81424

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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NRVHP820MFDT3G
ON Semiconductor

NRVHP820MFDT3G

bahagian bahagian: 69

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 4A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.05V @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBRT300200R
GeneSiC Semiconductor

MBRT300200R

bahagian bahagian: 1564

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 150A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR400150CTR
GeneSiC Semiconductor

MBR400150CTR

bahagian bahagian: 1548

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 200A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 200A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBRT300150R
GeneSiC Semiconductor

MBRT300150R

bahagian bahagian: 1563

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 150A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR200100CTR
GeneSiC Semiconductor

MBR200100CTR

bahagian bahagian: 1533

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 200A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 840mV @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR40080CTR
GeneSiC Semiconductor

MBR40080CTR

bahagian bahagian: 1212

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 400A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 840mV @ 200A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR20060CTR
GeneSiC Semiconductor

MBR20060CTR

bahagian bahagian: 1519

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 200A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR2X050A045
GeneSiC Semiconductor

MBR2X050A045

bahagian bahagian: 3870

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 50A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 50A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBRT40045R
GeneSiC Semiconductor

MBRT40045R

bahagian bahagian: 1156

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 400A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 200A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR2X100A200
GeneSiC Semiconductor

MBR2X100A200

bahagian bahagian: 3030

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR200150CT
GeneSiC Semiconductor

MBR200150CT

bahagian bahagian: 1552

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MURT20020
GeneSiC Semiconductor

MURT20020

bahagian bahagian: 1213

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 200A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR600100CT
GeneSiC Semiconductor

MBR600100CT

bahagian bahagian: 972

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 300A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 300A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MSRT200140(A)D
GeneSiC Semiconductor

MSRT200140(A)D

bahagian bahagian: 1324

Konfigurasi Diod: 1 Pair Series Connection, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1400V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 200A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 200A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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MBR500100CTR
GeneSiC Semiconductor

MBR500100CTR

bahagian bahagian: 1192

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 500A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 250A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR2X100A120
GeneSiC Semiconductor

MBR2X100A120

bahagian bahagian: 3096

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 120V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBRT12035
GeneSiC Semiconductor

MBRT12035

bahagian bahagian: 1844

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 35V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 120A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MUR30060CT
GeneSiC Semiconductor

MUR30060CT

bahagian bahagian: 1342

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 300A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR12030CT
GeneSiC Semiconductor

MBR12030CT

bahagian bahagian: 1491

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 120A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 650mV @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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FST160150
GeneSiC Semiconductor

FST160150

bahagian bahagian: 1636

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 80A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 80A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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V30DM120CHM3/I
Vishay Semiconductor Diodes Division

V30DM120CHM3/I

bahagian bahagian: 100592

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 120V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 970mV @ 15A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VT2060C-M3/4W
Vishay Semiconductor Diodes Division

VT2060C-M3/4W

bahagian bahagian: 109388

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 650mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VT3060G-E3/4W
Vishay Semiconductor Diodes Division

VT3060G-E3/4W

bahagian bahagian: 128134

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 730mV @ 15A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VFT2045CBP-M3/4W
Vishay Semiconductor Diodes Division

VFT2045CBP-M3/4W

bahagian bahagian: 102836

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 580mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VIT4060C-M3/4W
Vishay Semiconductor Diodes Division

VIT4060C-M3/4W

bahagian bahagian: 67167

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 620mV @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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V40PW60C-M3/I
Vishay Semiconductor Diodes Division

V40PW60C-M3/I

bahagian bahagian: 116952

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 680mV @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VFT3060G-M3/4W
Vishay Semiconductor Diodes Division

VFT3060G-M3/4W

bahagian bahagian: 121490

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 730mV @ 15A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VIT6045C-M3/4W
Vishay Semiconductor Diodes Division

VIT6045C-M3/4W

bahagian bahagian: 47709

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 30A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 640mV @ 30A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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V20M120M-E3/4W
Vishay Semiconductor Diodes Division

V20M120M-E3/4W

bahagian bahagian: 159782

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 120V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.01V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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V40120C-M3/4W
Vishay Semiconductor Diodes Division

V40120C-M3/4W

bahagian bahagian: 58911

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 120V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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V20202G-M3/4W
Vishay Semiconductor Diodes Division

V20202G-M3/4W

bahagian bahagian: 40301

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR1090CT-E3/4W
Vishay Semiconductor Diodes Division

MBR1090CT-E3/4W

bahagian bahagian: 120106

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 90V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 850mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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UGF2006GHC0G
Taiwan Semiconductor Corporation

UGF2006GHC0G

bahagian bahagian: 157

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR20200CTHC0G
Taiwan Semiconductor Corporation

MBR20200CTHC0G

bahagian bahagian: 152

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.23V @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GHXS010A060S-D3
Global Power Technologies Group

GHXS010A060S-D3

bahagian bahagian: 3747

Konfigurasi Diod: 2 Independent, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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