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Dioda - Penyearah - Susunan

RB088NS100FHTL
Rohm Semiconductor

RB088NS100FHTL

bahagian bahagian: 75

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 870mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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UMR12NTN
Rohm Semiconductor

UMR12NTN

bahagian bahagian: 104990

Konfigurasi Diod: 2 Pair Series Connection, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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MBRS15200CT-Y MNG
Taiwan Semiconductor Corporation

MBRS15200CT-Y MNG

bahagian bahagian: 112

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 950mV @ 7.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBRF3050CT C0G
Taiwan Semiconductor Corporation

MBRF3050CT C0G

bahagian bahagian: 86

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 30A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 30A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBRS20200CT-Y MNG
Taiwan Semiconductor Corporation

MBRS20200CT-Y MNG

bahagian bahagian: 173

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 990mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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HER1005G C0G
Taiwan Semiconductor Corporation

HER1005G C0G

bahagian bahagian: 90

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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SRS10100 MNG
Taiwan Semiconductor Corporation

SRS10100 MNG

bahagian bahagian: 82

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR1535CT C0G
Taiwan Semiconductor Corporation

MBR1535CT C0G

bahagian bahagian: 114

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 35V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 840mV @ 15A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBRS1090CTHMNG
Taiwan Semiconductor Corporation

MBRS1090CTHMNG

bahagian bahagian: 85

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 90V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 950mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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SRF1090 C0G
Taiwan Semiconductor Corporation

SRF1090 C0G

bahagian bahagian: 168

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 90V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR2590CTHC0G
Taiwan Semiconductor Corporation

MBR2590CTHC0G

bahagian bahagian: 126

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 90V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 25A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 25A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR25100CT C0G
Taiwan Semiconductor Corporation

MBR25100CT C0G

bahagian bahagian: 113

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 25A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 25A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBRF10200CTHC0G
Taiwan Semiconductor Corporation

MBRF10200CTHC0G

bahagian bahagian: 163

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 980mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR20200PTHC0G
Taiwan Semiconductor Corporation

MBR20200PTHC0G

bahagian bahagian: 83

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.02V @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR2060CT C0G
Taiwan Semiconductor Corporation

MBR2060CT C0G

bahagian bahagian: 125

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 950mV @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBRS10H150CT MNG
Taiwan Semiconductor Corporation

MBRS10H150CT MNG

bahagian bahagian: 93

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 970mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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HER1008G C0G
Taiwan Semiconductor Corporation

HER1008G C0G

bahagian bahagian: 152

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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SR3040PT C0G
Taiwan Semiconductor Corporation

SR3040PT C0G

bahagian bahagian: 123

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 30A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 15A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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FST30100
Microsemi Corporation

FST30100

bahagian bahagian: 15979

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 850mV @ 15A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VS-47CTQ020-1-M3
Vishay Semiconductor Diodes Division

VS-47CTQ020-1-M3

bahagian bahagian: 67559

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 450mV @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VS-MBRB2080CTRHM3
Vishay Semiconductor Diodes Division

VS-MBRB2080CTRHM3

bahagian bahagian: 72578

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 800mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VS-16CTQ100-1-M3
Vishay Semiconductor Diodes Division

VS-16CTQ100-1-M3

bahagian bahagian: 86952

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 720mV @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VS-32CTQ030STRRHM3
Vishay Semiconductor Diodes Division

VS-32CTQ030STRRHM3

bahagian bahagian: 52467

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 490mV @ 15A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VS-20CTQ035HN3
Vishay Semiconductor Diodes Division

VS-20CTQ035HN3

bahagian bahagian: 49342

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 35V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 10A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 570mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VS-MBRB20100CTLHM3
Vishay Semiconductor Diodes Division

VS-MBRB20100CTLHM3

bahagian bahagian: 72585

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 800mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VS-40CPQ060-N3
Vishay Semiconductor Diodes Division

VS-40CPQ060-N3

bahagian bahagian: 15163

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 40A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 680mV @ 40A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBRF10200CT-JT
Diodes Incorporated

MBRF10200CT-JT

bahagian bahagian: 113089

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 910mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR2050CT-G
Comchip Technology

MBR2050CT-G

bahagian bahagian: 114599

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 950mV @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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CDBT-40S-G
Comchip Technology

CDBT-40S-G

bahagian bahagian: 190055

Konfigurasi Diod: 1 Pair Series Connection, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 200mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 40mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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CDBD2040-G
Comchip Technology

CDBD2040-G

bahagian bahagian: 111181

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 20A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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NRVHP8H200MFDWFT1G
ON Semiconductor

NRVHP8H200MFDWFT1G

bahagian bahagian: 78

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 4A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 910mV @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBRB20H100CTT4G
ON Semiconductor

MBRB20H100CTT4G

bahagian bahagian: 99761

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 770mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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HN2S02JE(TE85L,F)
Toshiba Semiconductor and Storage

HN2S02JE(TE85L,F)

bahagian bahagian: 151

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 600mV @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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HN2S01FUTE85LF
Toshiba Semiconductor and Storage

HN2S01FUTE85LF

bahagian bahagian: 111

Konfigurasi Diod: 3 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 10V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 500mV @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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HN1D02F(TE85L,F)
Toshiba Semiconductor and Storage

HN1D02F(TE85L,F)

bahagian bahagian: 99

Konfigurasi Diod: 2 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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DB3X315E0L
Panasonic Electronic Components

DB3X315E0L

bahagian bahagian: 108903

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 30mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 30mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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