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Dioda - Penyearah - Susunan

RB088NS150FHTL
Rohm Semiconductor

RB088NS150FHTL

bahagian bahagian: 107

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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DAP222MFHT2L
Rohm Semiconductor

DAP222MFHT2L

bahagian bahagian: 142

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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DB3J406N0L
Panasonic Electronic Components

DB3J406N0L

bahagian bahagian: 168202

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 75mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 600mV @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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ND412426
Powerex Inc.

ND412426

bahagian bahagian: 171

Konfigurasi Diod: 1 Pair Series Connection, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 2400V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 260A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.35V @ 1500A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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ND410635
Powerex Inc.

ND410635

bahagian bahagian: 119

Konfigurasi Diod: 1 Pair Series Connection, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 350A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 1000A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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MBRF1550CTHC0G
Taiwan Semiconductor Corporation

MBRF1550CTHC0G

bahagian bahagian: 138

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 7.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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UGF1005GHC0G
Taiwan Semiconductor Corporation

UGF1005GHC0G

bahagian bahagian: 132

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 300V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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SRS2090 MNG
Taiwan Semiconductor Corporation

SRS2090 MNG

bahagian bahagian: 169

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 90V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GP1603 C0G
Taiwan Semiconductor Corporation

GP1603 C0G

bahagian bahagian: 74

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 16A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 8A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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UGF2004G C0G
Taiwan Semiconductor Corporation

UGF2004G C0G

bahagian bahagian: 113

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 950mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR10L100CTHC0G
Taiwan Semiconductor Corporation

MBR10L100CTHC0G

bahagian bahagian: 132

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 850mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR10100CTHC0G
Taiwan Semiconductor Corporation

MBR10100CTHC0G

bahagian bahagian: 141

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 950mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GP1606 C0G
Taiwan Semiconductor Corporation

GP1606 C0G

bahagian bahagian: 79

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 16A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 8A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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MBRF15150CT C0G
Taiwan Semiconductor Corporation

MBRF15150CT C0G

bahagian bahagian: 107

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 950mV @ 7.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBRS20100CT-Y MNG
Taiwan Semiconductor Corporation

MBRS20100CT-Y MNG

bahagian bahagian: 113

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 850mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBRF1050CTHC0G
Taiwan Semiconductor Corporation

MBRF1050CTHC0G

bahagian bahagian: 98

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR2090CT C0G
Taiwan Semiconductor Corporation

MBR2090CT C0G

bahagian bahagian: 82

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 90V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 950mV @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR20L120CT C0G
Taiwan Semiconductor Corporation

MBR20L120CT C0G

bahagian bahagian: 68

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 120V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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SRF16100HC0G
Taiwan Semiconductor Corporation

SRF16100HC0G

bahagian bahagian: 160

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 16A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBRS1550CTHMNG
Taiwan Semiconductor Corporation

MBRS1550CTHMNG

bahagian bahagian: 117

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 7.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBRS4060CT MNG
Taiwan Semiconductor Corporation

MBRS4060CT MNG

bahagian bahagian: 120

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 40A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 40A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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UGF1006GHC0G
Taiwan Semiconductor Corporation

UGF1006GHC0G

bahagian bahagian: 130

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GP1001HC0G
Taiwan Semiconductor Corporation

GP1001HC0G

bahagian bahagian: 92

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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MBR2550CT C0G
Taiwan Semiconductor Corporation

MBR2550CT C0G

bahagian bahagian: 111

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 25A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 25A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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SRS1090HMNG
Taiwan Semiconductor Corporation

SRS1090HMNG

bahagian bahagian: 160

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 90V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBRS25150CT MNG
Taiwan Semiconductor Corporation

MBRS25150CT MNG

bahagian bahagian: 144

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 25A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.02V @ 25A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VS-20CTQ150STRRHM3
Vishay Semiconductor Diodes Division

VS-20CTQ150STRRHM3

bahagian bahagian: 52621

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VS-15CTQ040-1-M3
Vishay Semiconductor Diodes Division

VS-15CTQ040-1-M3

bahagian bahagian: 115878

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 7.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 7.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VS-43CTQ100STRLHM3
Vishay Semiconductor Diodes Division

VS-43CTQ100STRLHM3

bahagian bahagian: 41679

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 810mV @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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SS12P4C-M3/87A
Vishay Semiconductor Diodes Division

SS12P4C-M3/87A

bahagian bahagian: 176480

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 6A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 520mV @ 6A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VS-MBRB20100CTR-M3
Vishay Semiconductor Diodes Division

VS-MBRB20100CTR-M3

bahagian bahagian: 76898

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 800mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VS-16CTQ100S-M3
Vishay Semiconductor Diodes Division

VS-16CTQ100S-M3

bahagian bahagian: 87159

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 720mV @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MSRT25080(A)
GeneSiC Semiconductor

MSRT25080(A)

bahagian bahagian: 1344

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 250A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 250A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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MSRTA40080(A)
GeneSiC Semiconductor

MSRTA40080(A)

bahagian bahagian: 1195

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 400A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 400A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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TBAV70,LM
Toshiba Semiconductor and Storage

TBAV70,LM

bahagian bahagian: 171499

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 215mA, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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MBRF20200CT-JT
Diodes Incorporated

MBRF20200CT-JT

bahagian bahagian: 102317

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 890mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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