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Transistor - Bipolar (BJT) - Tunggal, Pra Bias

PDTC123TM,315
Nexperia USA Inc.

PDTC123TM,315

bahagian bahagian: 198239

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V,

Bersenang-senang
PDTC124XMB,315
Nexperia USA Inc.

PDTC124XMB,315

bahagian bahagian: 138730

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5A, 5V,

Bersenang-senang
PDTB143EQAZ
Nexperia USA Inc.

PDTB143EQAZ

bahagian bahagian: 106198

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V,

Bersenang-senang
PDTD113ZQAZ
Nexperia USA Inc.

PDTD113ZQAZ

bahagian bahagian: 191015

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 1 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V,

Bersenang-senang
PDTA143XMB,315
Nexperia USA Inc.

PDTA143XMB,315

bahagian bahagian: 167339

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Bersenang-senang
PDTC115TM,315
Nexperia USA Inc.

PDTC115TM,315

bahagian bahagian: 119965

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 100 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

Bersenang-senang
PDTC143TM,315
Nexperia USA Inc.

PDTC143TM,315

bahagian bahagian: 144179

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V,

Bersenang-senang
PDTC143EQAZ
Nexperia USA Inc.

PDTC143EQAZ

bahagian bahagian: 183191

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

Bersenang-senang
PDTC114TMB,315
Nexperia USA Inc.

PDTC114TMB,315

bahagian bahagian: 145942

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V,

Bersenang-senang
PDTC115EMB,315
Nexperia USA Inc.

PDTC115EMB,315

bahagian bahagian: 187513

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 20mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 100 kOhms, Perintang - Pangkalan Pemancar (R2): 100 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V,

Bersenang-senang
PDTA114TMB,315
Nexperia USA Inc.

PDTA114TMB,315

bahagian bahagian: 135751

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V,

Bersenang-senang
PDTC114EMB,315
Nexperia USA Inc.

PDTC114EMB,315

bahagian bahagian: 181666

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

Bersenang-senang
PDTC143ZMB,315
Nexperia USA Inc.

PDTC143ZMB,315

bahagian bahagian: 196414

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V,

Bersenang-senang
DTA043EMT2L
Rohm Semiconductor

DTA043EMT2L

bahagian bahagian: 127323

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V,

Bersenang-senang
DTC114YMFHAT2L
Rohm Semiconductor

DTC114YMFHAT2L

bahagian bahagian: 120

Jenis Transistor: NPN - Pre-Biased + Diode, Semasa - Pemungut (Ic) (Maks): 100mA, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V,

Bersenang-senang
DTB143ECHZGT116
Rohm Semiconductor

DTB143ECHZGT116

bahagian bahagian: 58

Jenis Transistor: PNP - Pre-Biased + Diode, Semasa - Pemungut (Ic) (Maks): 500mA, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V,

Bersenang-senang
DTA143TMFHAT2L
Rohm Semiconductor

DTA143TMFHAT2L

bahagian bahagian: 76

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

Bersenang-senang
DTC023EUBTL
Rohm Semiconductor

DTC023EUBTL

bahagian bahagian: 140118

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 2.2 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 10V,

Bersenang-senang
DTC114YCAHZGT116
Rohm Semiconductor

DTC114YCAHZGT116

bahagian bahagian: 124

Jenis Transistor: NPN - Pre-Biased + Diode, Semasa - Pemungut (Ic) (Maks): 100mA, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V,

Bersenang-senang
DTA114TCAT116
Rohm Semiconductor

DTA114TCAT116

bahagian bahagian: 197746

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

Bersenang-senang
DTC115TUAT106
Rohm Semiconductor

DTC115TUAT106

bahagian bahagian: 125980

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 100 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

Bersenang-senang
DTA043ZUBTL
Rohm Semiconductor

DTA043ZUBTL

bahagian bahagian: 103603

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Bersenang-senang
DTA143XETL
Rohm Semiconductor

DTA143XETL

bahagian bahagian: 154528

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

Bersenang-senang
DTA143XMFHAT2L
Rohm Semiconductor

DTA143XMFHAT2L

bahagian bahagian: 81

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

Bersenang-senang
DTA144EMT2L
Rohm Semiconductor

DTA144EMT2L

bahagian bahagian: 115065

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 30mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V,

Bersenang-senang
DTB123EKFRAT146
Rohm Semiconductor

DTB123EKFRAT146

bahagian bahagian: 69

Jenis Transistor: PNP - Pre-Biased + Diode, Semasa - Pemungut (Ic) (Maks): 500mA, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 2.2 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V,

Bersenang-senang
DTB123TKT146
Rohm Semiconductor

DTB123TKT146

bahagian bahagian: 124419

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Perintang - Pangkalan (R1): 2.2 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V,

Bersenang-senang
DTC114YU3T106
Rohm Semiconductor

DTC114YU3T106

bahagian bahagian: 62

Jenis Transistor: NPN - Pre-Biased + Diode, Semasa - Pemungut (Ic) (Maks): 100mA, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V,

Bersenang-senang
DTA113ZKAT146
Rohm Semiconductor

DTA113ZKAT146

bahagian bahagian: 178102

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 1 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V,

Bersenang-senang
DTC043ZMT2L
Rohm Semiconductor

DTC043ZMT2L

bahagian bahagian: 122981

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Bersenang-senang
DTC114ECAHZGT116
Rohm Semiconductor

DTC114ECAHZGT116

bahagian bahagian: 141

Jenis Transistor: NPN - Pre-Biased + Diode, Semasa - Pemungut (Ic) (Maks): 100mA, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

Bersenang-senang
DTA143TM3T5G
ON Semiconductor

DTA143TM3T5G

bahagian bahagian: 156016

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

Bersenang-senang
SMMUN2111LT3G
ON Semiconductor

SMMUN2111LT3G

bahagian bahagian: 143334

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

Bersenang-senang
DTC113EET1G
ON Semiconductor

DTC113EET1G

bahagian bahagian: 188808

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 1 kOhms, Perintang - Pangkalan Pemancar (R2): 1 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V,

Bersenang-senang
FJX4007RTF
ON Semiconductor

FJX4007RTF

bahagian bahagian: 2445

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V,

Bersenang-senang
NSBA114TF3T5G
ON Semiconductor

NSBA114TF3T5G

bahagian bahagian: 105796

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

Bersenang-senang