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Transistor - Bipolar (BJT) - Tunggal, Pra Bias

PDTB114ETR
Nexperia USA Inc.

PDTB114ETR

bahagian bahagian: 192410

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V,

Bersenang-senang
DDTC143XE-7
Diodes Incorporated

DDTC143XE-7

bahagian bahagian: 197990

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

Bersenang-senang
DDTA123TKA-7-F
Diodes Incorporated

DDTA123TKA-7-F

bahagian bahagian: 1915

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

Bersenang-senang
DDTA144TKA-7-F
Diodes Incorporated

DDTA144TKA-7-F

bahagian bahagian: 1944

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

Bersenang-senang
DDTD123YU-7-F
Diodes Incorporated

DDTD123YU-7-F

bahagian bahagian: 159098

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V,

Bersenang-senang
DDTA123ECA-7-F
Diodes Incorporated

DDTA123ECA-7-F

bahagian bahagian: 167434

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 2.2 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V,

Bersenang-senang
DDTC124GKA-7-F
Diodes Incorporated

DDTC124GKA-7-F

bahagian bahagian: 1901

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V,

Bersenang-senang
DDTD142JU-7-F
Diodes Incorporated

DDTD142JU-7-F

bahagian bahagian: 100187

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 470 Ohms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V,

Bersenang-senang
DDTC142JE-7-F
Diodes Incorporated

DDTC142JE-7-F

bahagian bahagian: 125307

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 470 Ohms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 56 @ 10mA, 5V,

Bersenang-senang
DDTC143XKA-7-F
Diodes Incorporated

DDTC143XKA-7-F

bahagian bahagian: 1911

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

Bersenang-senang
SMUN2230T1G
ON Semiconductor

SMUN2230T1G

bahagian bahagian: 178747

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 1 kOhms, Perintang - Pangkalan Pemancar (R2): 1 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V,

Bersenang-senang
FJV3115RMTF
ON Semiconductor

FJV3115RMTF

bahagian bahagian: 170458

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V,

Bersenang-senang
NSBC143EF3T5G
ON Semiconductor

NSBC143EF3T5G

bahagian bahagian: 150999

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V,

Bersenang-senang
NSBC114TF3T5G
ON Semiconductor

NSBC114TF3T5G

bahagian bahagian: 143954

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

Bersenang-senang
PDTC123ES,126
NXP USA Inc.

PDTC123ES,126

bahagian bahagian: 1997

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 2.2 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V,

Bersenang-senang
PDTB113ES,126
NXP USA Inc.

PDTB113ES,126

bahagian bahagian: 1965

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 1 kOhms, Perintang - Pangkalan Pemancar (R2): 1 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V,

Bersenang-senang
PDTC124ES,126
NXP USA Inc.

PDTC124ES,126

bahagian bahagian: 1970

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V,

Bersenang-senang
PDTA114TE,115
NXP USA Inc.

PDTA114TE,115

bahagian bahagian: 1980

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V,

Bersenang-senang
DTC143XCAHZGT116
Rohm Semiconductor

DTC143XCAHZGT116

bahagian bahagian: 16286

Jenis Transistor: NPN - Pre-Biased + Diode, Semasa - Pemungut (Ic) (Maks): 100mA, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

Bersenang-senang
DTC015EEBTL
Rohm Semiconductor

DTC015EEBTL

bahagian bahagian: 107532

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 20mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 100 kOhms, Perintang - Pangkalan Pemancar (R2): 100 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Bersenang-senang
DTB114GKT146
Rohm Semiconductor

DTB114GKT146

bahagian bahagian: 168234

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V,

Bersenang-senang
DTC143XUAT106
Rohm Semiconductor

DTC143XUAT106

bahagian bahagian: 114463

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

Bersenang-senang
DTA143ZKAT146
Rohm Semiconductor

DTA143ZKAT146

bahagian bahagian: 123299

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Bersenang-senang
DTC144VKAT146
Rohm Semiconductor

DTC144VKAT146

bahagian bahagian: 164888

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V,

Bersenang-senang
UNR321000L
Panasonic Electronic Components

UNR321000L

bahagian bahagian: 108084

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

Bersenang-senang
UNR511600L
Panasonic Electronic Components

UNR511600L

bahagian bahagian: 122493

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

Bersenang-senang
UNR9219G0L
Panasonic Electronic Components

UNR9219G0L

bahagian bahagian: 136285

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 1 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V,

Bersenang-senang
UNR911BG0L
Panasonic Electronic Components

UNR911BG0L

bahagian bahagian: 2166

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 100 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

Bersenang-senang
UNR92A8G0L
Panasonic Electronic Components

UNR92A8G0L

bahagian bahagian: 1977

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 80mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 510 Ohms, Perintang - Pangkalan Pemancar (R2): 5.1 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V,

Bersenang-senang
UNR9112G0L
Panasonic Electronic Components

UNR9112G0L

bahagian bahagian: 1944

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

Bersenang-senang
UNR511VG0L
Panasonic Electronic Components

UNR511VG0L

bahagian bahagian: 1962

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 2.2 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 6 @ 5mA, 10V,

Bersenang-senang
UNR9110G0L
Panasonic Electronic Components

UNR9110G0L

bahagian bahagian: 141689

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

Bersenang-senang
RN2315TE85LF
Toshiba Semiconductor and Storage

RN2315TE85LF

bahagian bahagian: 100188

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Bersenang-senang
RN1112ACT(TPL3)
Toshiba Semiconductor and Storage

RN1112ACT(TPL3)

bahagian bahagian: 1954

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 80mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Bersenang-senang
RN2101ACT(TPL3)
Toshiba Semiconductor and Storage

RN2101ACT(TPL3)

bahagian bahagian: 1987

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 80mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

Bersenang-senang
RN1105CT(TPL3)
Toshiba Semiconductor and Storage

RN1105CT(TPL3)

bahagian bahagian: 1976

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V,

Bersenang-senang