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Transistor - Bipolar (BJT) - Tunggal, Pra Bias

BCR185E6433HTMA1
Infineon Technologies

BCR185E6433HTMA1

bahagian bahagian: 106317

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Bersenang-senang
BCR116E6433HTMA1
Infineon Technologies

BCR116E6433HTMA1

bahagian bahagian: 137700

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Bersenang-senang
BCR162E6327HTSA1
Infineon Technologies

BCR162E6327HTSA1

bahagian bahagian: 108478

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V,

Bersenang-senang
BCR146E6327HTSA1
Infineon Technologies

BCR146E6327HTSA1

bahagian bahagian: 186500

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 70mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

Bersenang-senang
BCR119E6327HTSA1
Infineon Technologies

BCR119E6327HTSA1

bahagian bahagian: 189129

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

Bersenang-senang
BCR141E6433HTMA1
Infineon Technologies

BCR141E6433HTMA1

bahagian bahagian: 175032

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

Bersenang-senang
BCR183E6433HTMA1
Infineon Technologies

BCR183E6433HTMA1

bahagian bahagian: 103535

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

Bersenang-senang
BCR192E6327HTSA1
Infineon Technologies

BCR192E6327HTSA1

bahagian bahagian: 151355

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Bersenang-senang
BCR141E6327HTSA1
Infineon Technologies

BCR141E6327HTSA1

bahagian bahagian: 118113

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

Bersenang-senang
BCR135E6433HTMA1
Infineon Technologies

BCR135E6433HTMA1

bahagian bahagian: 178566

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Bersenang-senang
BCR198E6433HTMA1
Infineon Technologies

BCR198E6433HTMA1

bahagian bahagian: 129349

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Bersenang-senang
DTD543EMT2L
Rohm Semiconductor

DTD543EMT2L

bahagian bahagian: 197068

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 12V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V,

Bersenang-senang
DTA114ECAHZGT116
Rohm Semiconductor

DTA114ECAHZGT116

bahagian bahagian: 76

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

Bersenang-senang
DTA123EMFHAT2L
Rohm Semiconductor

DTA123EMFHAT2L

bahagian bahagian: 52

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 2.2 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V,

Bersenang-senang
DTC014YMT2L
Rohm Semiconductor

DTC014YMT2L

bahagian bahagian: 110155

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 70mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Bersenang-senang
DTC143ZCAT116
Rohm Semiconductor

DTC143ZCAT116

bahagian bahagian: 189541

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Bersenang-senang
DTD114EKT146
Rohm Semiconductor

DTD114EKT146

bahagian bahagian: 161703

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V,

Bersenang-senang
DTC044TMT2L
Rohm Semiconductor

DTC044TMT2L

bahagian bahagian: 146210

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 60mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V,

Bersenang-senang
DTA114ECAT116
Rohm Semiconductor

DTA114ECAT116

bahagian bahagian: 198449

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

Bersenang-senang
DTC023YMT2L
Rohm Semiconductor

DTC023YMT2L

bahagian bahagian: 197747

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

Bersenang-senang
DTA114YU3T106
Rohm Semiconductor

DTA114YU3T106

bahagian bahagian: 129

Jenis Transistor: PNP - Pre-Biased + Diode, Semasa - Pemungut (Ic) (Maks): 100mA, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V,

Bersenang-senang
DTB523YMT2L
Rohm Semiconductor

DTB523YMT2L

bahagian bahagian: 140306

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 12V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V,

Bersenang-senang
DTA043ZMT2L
Rohm Semiconductor

DTA043ZMT2L

bahagian bahagian: 168268

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Bersenang-senang
DTC014YUBTL
Rohm Semiconductor

DTC014YUBTL

bahagian bahagian: 181793

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 70mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Bersenang-senang
DTDG14GPT100
Rohm Semiconductor

DTDG14GPT100

bahagian bahagian: 143898

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V,

Bersenang-senang
NSBC113EF3T5G
ON Semiconductor

NSBC113EF3T5G

bahagian bahagian: 197567

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 1 kOhms, Perintang - Pangkalan Pemancar (R2): 1 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V,

Bersenang-senang
FJX3014RTF
ON Semiconductor

FJX3014RTF

bahagian bahagian: 170119

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V,

Bersenang-senang
NSVDTA143ZET1G
ON Semiconductor

NSVDTA143ZET1G

bahagian bahagian: 131694

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Bersenang-senang
DTC115EM3T5G
ON Semiconductor

DTC115EM3T5G

bahagian bahagian: 134427

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 100 kOhms, Perintang - Pangkalan Pemancar (R2): 100 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Bersenang-senang
FJX3009RTF
ON Semiconductor

FJX3009RTF

bahagian bahagian: 2529

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Perintang - Pangkalan (R1): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

Bersenang-senang
DTA115TET1G
ON Semiconductor

DTA115TET1G

bahagian bahagian: 107308

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 100 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

Bersenang-senang
SMMUN2116LT3G
ON Semiconductor

SMMUN2116LT3G

bahagian bahagian: 182112

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

Bersenang-senang
MUN2232T1G
ON Semiconductor

MUN2232T1G

bahagian bahagian: 112143

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V,

Bersenang-senang
PDTA114YQAZ
Nexperia USA Inc.

PDTA114YQAZ

bahagian bahagian: 119778

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V,

Bersenang-senang
PDTA144WM,315
Nexperia USA Inc.

PDTA144WM,315

bahagian bahagian: 130610

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V,

Bersenang-senang
PDTA114YM,315
Nexperia USA Inc.

PDTA114YM,315

bahagian bahagian: 166222

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V,

Bersenang-senang