Transistor - Bipolar (BJT) - Susunan, Pra-Bias

DMG964H10R

bahagian bahagian: 102063

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 30 @ 5mA, 10V,

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DMA261040R

bahagian bahagian: 124693

Jenis Transistor: 2 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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DMC561030R

bahagian bahagian: 186126

Jenis Transistor: 2 NPN - Pre-Biased (Dual) (Emitter Coupled), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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DMG563H10R

bahagian bahagian: 142784

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 30 @ 5mA, 10V,

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DMG963H50R

bahagian bahagian: 161110

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, 10 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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DMG964H30R

bahagian bahagian: 135129

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, 1 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 30 @ 5mA, 10V,

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DMG264H00R

bahagian bahagian: 166782

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 50 @ 100mA, 10V,

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DMA964030R

bahagian bahagian: 167569

Jenis Transistor: 2 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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DMG964040R

bahagian bahagian: 119413

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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PEMH1,115

bahagian bahagian: 195613

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V,

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PEMB1,115

bahagian bahagian: 118852

Jenis Transistor: 2 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V,

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PUMH19,115

bahagian bahagian: 122298

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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PUMB14,115

bahagian bahagian: 197885

Jenis Transistor: 2 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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PUMD10,125

bahagian bahagian: 119729

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V,

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PUMH16,115

bahagian bahagian: 161315

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V,

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RN1703JE(TE85L,F)

bahagian bahagian: 155

Jenis Transistor: 2 NPN - Pre-Biased (Dual) (Emitter Coupled), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

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RN2708JE(TE85L,F)

bahagian bahagian: 101

Jenis Transistor: 2 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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RN1601(TE85L,F)

bahagian bahagian: 91

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

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RN1902,LF(CT

bahagian bahagian: 160819

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

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RN2707JE(TE85L,F)

bahagian bahagian: 113

Jenis Transistor: 2 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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NSVMUN5211DW1T2G

bahagian bahagian: 121426

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

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IMH20TR1G

bahagian bahagian: 119987

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 15V, Perintang - Pangkalan (R1): 2.2 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V,

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NSBC144EDXV6T5G

bahagian bahagian: 180837

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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EMC2DXV5T1G

bahagian bahagian: 188232

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

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NSVBC124XPDXV6T1G

bahagian bahagian: 173078

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSVB1706DMW5T1G

bahagian bahagian: 192009

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSBC144WDP6T5G

bahagian bahagian: 114076

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Bersenang-senang

IMD9AT108

bahagian bahagian: 163179

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V,

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EMB61T2R

bahagian bahagian: 104787

Jenis Transistor: 2 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

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EMB10T2R

bahagian bahagian: 175699

Jenis Transistor: 2 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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UMH4NTN

bahagian bahagian: 149464

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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EMH10FHAT2R

bahagian bahagian: 131

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Bersenang-senang

EMA4T2R

bahagian bahagian: 114783

Jenis Transistor: 2 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

Bersenang-senang

EMD62T2R

bahagian bahagian: 115365

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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