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Diod - Kapasitansi Berubah (Varicaps, Varactors)

1SV324TPH3F
Toshiba Semiconductor and Storage

1SV324TPH3F

bahagian bahagian: 185359

Kapasiti @ Vr, F: 12pF @ 4V, 1MHz, Nisbah Kapasiti: 4.3, Keadaan Nisbah Kapasitansi: C1/C4, Voltan - Terbalik Puncak (Maks): 10V, Jenis Diod: Single,

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1SV277TPH3F
Toshiba Semiconductor and Storage

1SV277TPH3F

bahagian bahagian: 196616

Kapasiti @ Vr, F: 2.35pF @ 4V, 1MHz, Nisbah Kapasiti: 2.3, Keadaan Nisbah Kapasitansi: C1/C4, Voltan - Terbalik Puncak (Maks): 10V, Jenis Diod: Single,

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1SV229TPH3F
Toshiba Semiconductor and Storage

1SV229TPH3F

bahagian bahagian: 137721

Kapasiti @ Vr, F: 6.5pF @ 10V, 1MHz, Nisbah Kapasiti: 2.5, Keadaan Nisbah Kapasitansi: C2/C10, Voltan - Terbalik Puncak (Maks): 15V, Jenis Diod: Single,

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1SV304TPH3F
Toshiba Semiconductor and Storage

1SV304TPH3F

bahagian bahagian: 112795

Kapasiti @ Vr, F: 6.6pF @ 4V, 1MHz, Nisbah Kapasiti: 3, Keadaan Nisbah Kapasitansi: C1/C4, Voltan - Terbalik Puncak (Maks): 10V, Jenis Diod: Single,

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1SV310TPH3F
Toshiba Semiconductor and Storage

1SV310TPH3F

bahagian bahagian: 155615

Kapasiti @ Vr, F: 5.45pF @ 4V, 1MHz, Nisbah Kapasiti: 2.1, Keadaan Nisbah Kapasitansi: C1/C4, Voltan - Terbalik Puncak (Maks): 10V, Jenis Diod: Single,

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1SV279,H3F
Toshiba Semiconductor and Storage

1SV279,H3F

bahagian bahagian: 171

Kapasiti @ Vr, F: 6.5pF @ 10V, 1MHz, Nisbah Kapasiti: 2.5, Keadaan Nisbah Kapasitansi: C2/C10, Voltan - Terbalik Puncak (Maks): 15V, Jenis Diod: Single,

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1SV270TPH3F
Toshiba Semiconductor and Storage

1SV270TPH3F

bahagian bahagian: 199585

Kapasiti @ Vr, F: 8.7pF @ 4V, 1MHz, Nisbah Kapasiti: 2, Keadaan Nisbah Kapasitansi: C1/C4, Voltan - Terbalik Puncak (Maks): 10V, Jenis Diod: Single,

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1SV325,H3F
Toshiba Semiconductor and Storage

1SV325,H3F

bahagian bahagian: 113697

Kapasiti @ Vr, F: 12pF @ 4V, 1MHz, Nisbah Kapasiti: 4.3, Keadaan Nisbah Kapasitansi: C1/C4, Voltan - Terbalik Puncak (Maks): 10V, Jenis Diod: Single,

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1SV228TPH3F
Toshiba Semiconductor and Storage

1SV228TPH3F

bahagian bahagian: 173745

Kapasiti @ Vr, F: 13.7pF @ 8V, 1MHz, Nisbah Kapasiti: 2.6, Keadaan Nisbah Kapasitansi: C3/C8, Voltan - Terbalik Puncak (Maks): 15V, Jenis Diod: 1 Pair Common Cathode,

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1SV322(TPH3,F)
Toshiba Semiconductor and Storage

1SV322(TPH3,F)

bahagian bahagian: 134786

Kapasiti @ Vr, F: 7.1pF @ 4V, 1MHz, Nisbah Kapasiti: 4.3, Keadaan Nisbah Kapasitansi: C1/C4, Voltan - Terbalik Puncak (Maks): 10V, Jenis Diod: Single,

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1SV239TPH3F
Toshiba Semiconductor and Storage

1SV239TPH3F

bahagian bahagian: 138496

Kapasiti @ Vr, F: 2pF @ 10V, 1MHz, Nisbah Kapasiti: 2.4, Keadaan Nisbah Kapasitansi: C2/C10, Voltan - Terbalik Puncak (Maks): 15V, Jenis Diod: Single,

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1SV323,H3F
Toshiba Semiconductor and Storage

1SV323,H3F

bahagian bahagian: 196969

Kapasiti @ Vr, F: 7.1pF @ 4V, 1MHz, Nisbah Kapasiti: 4.3, Keadaan Nisbah Kapasitansi: C1/C4, Voltan - Terbalik Puncak (Maks): 10V, Jenis Diod: Single,

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1SV281(TPH3,F)
Toshiba Semiconductor and Storage

1SV281(TPH3,F)

bahagian bahagian: 113541

Kapasiti @ Vr, F: 8.7pF @ 4V, 1MHz, Nisbah Kapasiti: 2, Keadaan Nisbah Kapasitansi: C1/C4, Voltan - Terbalik Puncak (Maks): 10V, Jenis Diod: Single,

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1SV280,H3F
Toshiba Semiconductor and Storage

1SV280,H3F

bahagian bahagian: 138179

Kapasiti @ Vr, F: 2pF @ 10V, 1MHz, Nisbah Kapasiti: 2.4, Keadaan Nisbah Kapasitansi: C2/C10, Voltan - Terbalik Puncak (Maks): 15V, Jenis Diod: Single,

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1SV311(TPH3,F)
Toshiba Semiconductor and Storage

1SV311(TPH3,F)

bahagian bahagian: 4833

Kapasiti @ Vr, F: 5.45pF @ 4V, 1MHz, Nisbah Kapasiti: 2.1, Keadaan Nisbah Kapasitansi: C1/C4, Voltan - Terbalik Puncak (Maks): 10V, Jenis Diod: Single,

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1SV282TPH3F
Toshiba Semiconductor and Storage

1SV282TPH3F

bahagian bahagian: 128246

Kapasiti @ Vr, F: 3pF @ 25V, 1MHz, Nisbah Kapasiti: 12.5, Keadaan Nisbah Kapasitansi: C2/C25, Voltan - Terbalik Puncak (Maks): 34V, Jenis Diod: Single,

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1SV285TPH3F
Toshiba Semiconductor and Storage

1SV285TPH3F

bahagian bahagian: 158213

Kapasiti @ Vr, F: 2.35pF @ 4V, 1MHz, Nisbah Kapasiti: 2.3, Keadaan Nisbah Kapasitansi: C1/C4, Voltan - Terbalik Puncak (Maks): 10V, Jenis Diod: Single,

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1SV305,H3F
Toshiba Semiconductor and Storage

1SV305,H3F

bahagian bahagian: 188801

Kapasiti @ Vr, F: 6.6pF @ 4V, 1MHz, Nisbah Kapasiti: 3, Keadaan Nisbah Kapasitansi: C1/C4, Voltan - Terbalik Puncak (Maks): 10V, Jenis Diod: Single,

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1SV314(TPL3,F)
Toshiba Semiconductor and Storage

1SV314(TPL3,F)

bahagian bahagian: 7384

Kapasiti @ Vr, F: 3.4pF @ 2.5V, 1MHz, Nisbah Kapasiti: 2.5, Keadaan Nisbah Kapasitansi: C0.5/C2.5, Voltan - Terbalik Puncak (Maks): 10V, Jenis Diod: Single,

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BBY6602VH6327XTSA1
Infineon Technologies

BBY6602VH6327XTSA1

bahagian bahagian: 56

Kapasiti @ Vr, F: 13.5pF @ 4.5V, 1MHz, Nisbah Kapasiti: 5.41, Keadaan Nisbah Kapasitansi: C1/C4.5, Voltan - Terbalik Puncak (Maks): 12V, Jenis Diod: Single,

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BBY5502VH6327XTSA1
Infineon Technologies

BBY5502VH6327XTSA1

bahagian bahagian: 185858

Kapasiti @ Vr, F: 6.5pF @ 10V, 1MHz, Nisbah Kapasiti: 3, Keadaan Nisbah Kapasitansi: C2/C10, Voltan - Terbalik Puncak (Maks): 16V, Jenis Diod: Single,

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BB914E6327HTSA1
Infineon Technologies

BB914E6327HTSA1

bahagian bahagian: 193038

Kapasiti @ Vr, F: 19.75pF @ 8V, 1MHz, Nisbah Kapasiti: 2.42, Keadaan Nisbah Kapasitansi: C2/C8, Voltan - Terbalik Puncak (Maks): 18V, Jenis Diod: 1 Pair Common Cathode,

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BB844E6327HTSA1
Infineon Technologies

BB844E6327HTSA1

bahagian bahagian: 139465

Kapasiti @ Vr, F: 13pF @ 8V, 1MHz, Nisbah Kapasiti: 3.8, Keadaan Nisbah Kapasitansi: C2/C8, Voltan - Terbalik Puncak (Maks): 18V, Jenis Diod: 1 Pair Common Cathode,

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BBY5503WE6327HTSA1
Infineon Technologies

BBY5503WE6327HTSA1

bahagian bahagian: 189423

Kapasiti @ Vr, F: 6.5pF @ 10V, 1MHz, Nisbah Kapasiti: 3, Keadaan Nisbah Kapasitansi: C2/C10, Voltan - Terbalik Puncak (Maks): 16V, Jenis Diod: Single,

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BBY5303WE6327HTSA1
Infineon Technologies

BBY5303WE6327HTSA1

bahagian bahagian: 158786

Kapasiti @ Vr, F: 3.1pF @ 3V, 1MHz, Nisbah Kapasiti: 2.6, Keadaan Nisbah Kapasitansi: C1/C3, Voltan - Terbalik Puncak (Maks): 6V, Jenis Diod: Single,

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BB207,215
NXP USA Inc.

BB207,215

bahagian bahagian: 158097

Kapasiti @ Vr, F: 26.3pF @ 8V, 1MHz, Nisbah Kapasiti: 3.3, Keadaan Nisbah Kapasitansi: C1/C7.5, Voltan - Terbalik Puncak (Maks): 15V, Jenis Diod: 1 Pair Common Cathode,

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BB181,135
NXP USA Inc.

BB181,135

bahagian bahagian: 146414

Kapasiti @ Vr, F: 1.055pF @ 28V, 1MHz, Nisbah Kapasiti: 16, Keadaan Nisbah Kapasitansi: C0.5/C28, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single,

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BB202,135
NXP USA Inc.

BB202,135

bahagian bahagian: 127335

Kapasiti @ Vr, F: 11.2pF @ 2.3V, 1MHz, Nisbah Kapasiti: 2.5, Keadaan Nisbah Kapasitansi: C0.2/C2.3, Voltan - Terbalik Puncak (Maks): 6V, Jenis Diod: Single,

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BB208-02,115
NXP USA Inc.

BB208-02,115

bahagian bahagian: 122039

Kapasiti @ Vr, F: 5.4pF @ 7.5V, 1MHz, Nisbah Kapasiti: 5.2, Keadaan Nisbah Kapasitansi: C1/C7.5, Voltan - Terbalik Puncak (Maks): 10V, Jenis Diod: Single,

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BB172X
NXP USA Inc.

BB172X

bahagian bahagian: 162817

Kapasiti @ Vr, F: 2.754pF @ 28V, 1MHz, Nisbah Kapasiti: 15, Keadaan Nisbah Kapasitansi: C1/C28, Voltan - Terbalik Puncak (Maks): 32V, Jenis Diod: Single,

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BB201,215
NXP USA Inc.

BB201,215

bahagian bahagian: 109443

Kapasiti @ Vr, F: 25.5pF @ 8V, 1MHz, Nisbah Kapasiti: 3.8, Keadaan Nisbah Kapasitansi: C1/C7.5, Voltan - Terbalik Puncak (Maks): 15V, Jenis Diod: 1 Pair Common Cathode,

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BB181,115
NXP USA Inc.

BB181,115

bahagian bahagian: 115786

Kapasiti @ Vr, F: 1.055pF @ 28V, 1MHz, Nisbah Kapasiti: 16, Keadaan Nisbah Kapasitansi: C0.5/C28, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single,

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BB208-02,135
NXP USA Inc.

BB208-02,135

bahagian bahagian: 162505

Kapasiti @ Vr, F: 5.4pF @ 7.5V, 1MHz, Nisbah Kapasiti: 5.2, Keadaan Nisbah Kapasitansi: C1/C7.5, Voltan - Terbalik Puncak (Maks): 10V, Jenis Diod: Single,

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BB207,235
NXP USA Inc.

BB207,235

bahagian bahagian: 148626

Kapasiti @ Vr, F: 26.3pF @ 8V, 1MHz, Nisbah Kapasiti: 3.3, Keadaan Nisbah Kapasitansi: C1/C7.5, Voltan - Terbalik Puncak (Maks): 15V, Jenis Diod: 1 Pair Common Cathode,

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BB156,135
NXP USA Inc.

BB156,135

bahagian bahagian: 103178

Kapasiti @ Vr, F: 5.4pF @ 7.5V, 1MHz, Nisbah Kapasiti: 3.9, Keadaan Nisbah Kapasitansi: C1/C7.5, Voltan - Terbalik Puncak (Maks): 10V, Jenis Diod: Single,

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BB131,135
NXP USA Inc.

BB131,135

bahagian bahagian: 168938

Kapasiti @ Vr, F: 1.055pF @ 28V, 1MHz, Nisbah Kapasiti: 16, Keadaan Nisbah Kapasitansi: C0.5/C28, Voltan - Terbalik Puncak (Maks): 30V, Jenis Diod: Single,

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