Transistor - FET, MOSFET - Susunan

SI4906DY-T1-E3

bahagian bahagian: 2797

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.6A, Rds On (Maks) @ Id, Vgs: 39 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

VQ1001P-2

bahagian bahagian: 2955

Jenis FET: 4 N-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 830mA, Rds On (Maks) @ Id, Vgs: 1.75 Ohm @ 200mA, 5V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

SI4953ADY-T1-E3

bahagian bahagian: 3366

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.7A, Rds On (Maks) @ Id, Vgs: 53 mOhm @ 4.9A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

SQ4946EY-T1-E3

bahagian bahagian: 2909

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 55 mOhm @ 4.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

SI1551DL-T1-E3

bahagian bahagian: 3285

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 290mA, 410mA, Rds On (Maks) @ Id, Vgs: 1.9 Ohm @ 290mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

SI5947DU-T1-GE3

bahagian bahagian: 2813

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 58 mOhm @ 3.6A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

VQ1006P-2

bahagian bahagian: 2934

Jenis FET: 4 N-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 90V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 400mA, Rds On (Maks) @ Id, Vgs: 4.5 Ohm @ 1A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

SI4561DY-T1-E3

bahagian bahagian: 2835

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.8A, 7.2A, Rds On (Maks) @ Id, Vgs: 35.5 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

SI6993DQ-T1-E3

bahagian bahagian: 2760

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.6A, Rds On (Maks) @ Id, Vgs: 31 mOhm @ 4.7A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

SI5905DC-T1-E3

bahagian bahagian: 2878

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 3A, 4.5V, Vgs (th) (Maks) @ Id: 450mV @ 250µA (Min),

SIA912DJ-T1-GE3

bahagian bahagian: 2835

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

NDS9933A

bahagian bahagian: 2707

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.8A, Rds On (Maks) @ Id, Vgs: 140 mOhm @ 2.8A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

FDS6894AZ

bahagian bahagian: 2716

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 17 mOhm @ 8A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDS4559-F085

bahagian bahagian: 5411

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, 3.5A, Rds On (Maks) @ Id, Vgs: 55 mOhm @ 4.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FDW2520C

bahagian bahagian: 2720

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, 4.4A, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 6A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FD6M043N08

bahagian bahagian: 2778

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 75V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 65A, Rds On (Maks) @ Id, Vgs: 4.3 mOhm @ 40A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

MCH6605-TL-E

bahagian bahagian: 2963

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, 4V Drive, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 140mA, Rds On (Maks) @ Id, Vgs: 22 Ohm @ 40mA, 10V,

ECH8654-TL-HQ

bahagian bahagian: 2956

FDMC3300NZA

bahagian bahagian: 2769

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 26 mOhm @ 8A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDD8426H

bahagian bahagian: 2797

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A, 10A, Rds On (Maks) @ Id, Vgs: 12 mOhm @ 12A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

MMDF3N04HDR2G

bahagian bahagian: 2776

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.4A, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 3.4A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FDS6892AZ

bahagian bahagian: 2717

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.5A, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 7.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDS3601

bahagian bahagian: 2704

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.3A, Rds On (Maks) @ Id, Vgs: 480 mOhm @ 1.3A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

FDG6301N_D87Z

bahagian bahagian: 3287

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 220mA, Rds On (Maks) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

IRF9953

bahagian bahagian: 2696

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.3A, Rds On (Maks) @ Id, Vgs: 250 mOhm @ 1A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

IRF7106

bahagian bahagian: 2699

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, 2.5A, Rds On (Maks) @ Id, Vgs: 125 mOhm @ 1A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

IRF7329TR

bahagian bahagian: 2673

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.2A, Rds On (Maks) @ Id, Vgs: 17 mOhm @ 9.2A, 4.5V, Vgs (th) (Maks) @ Id: 900mV @ 250µA,

IRF7901D1

bahagian bahagian: 2681

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.2A, Rds On (Maks) @ Id, Vgs: 38 mOhm @ 5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

ZXMC3A18DN8TA

bahagian bahagian: 2765

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.8A, 4.8A, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 5.8A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

ZVN4206NTA

bahagian bahagian: 2720

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V,

ZXMD65P02N8TA

bahagian bahagian: 2712

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 2.9A, 4.5V, Vgs (th) (Maks) @ Id: 700mV @ 250µA (Min),

DMN5L06V-7

bahagian bahagian: 2781

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 280mA, Rds On (Maks) @ Id, Vgs: 3 Ohm @ 200mA, 2.7V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

SP8M7FU6TB

bahagian bahagian: 2829

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, 7A, Rds On (Maks) @ Id, Vgs: 51 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

TMC1320-LA

bahagian bahagian: 2905

Jenis FET: N and P-Channel, Common Drain, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.3A, 5.3A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 4A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

GA100SCPL12-227E

bahagian bahagian: 2843

PHN210T,118

bahagian bahagian: 189974

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 2.2A, 10V, Vgs (th) (Maks) @ Id: 2.8V @ 1mA,