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Diod - Pembetulan - Bujang

1N5397-E3/54
Vishay Semiconductor Diodes Division

1N5397-E3/54

bahagian bahagian: 147448

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

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1N5393-E3/73
Vishay Semiconductor Diodes Division

1N5393-E3/73

bahagian bahagian: 193566

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

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1N4936-E3/73
Vishay Semiconductor Diodes Division

1N4936-E3/73

bahagian bahagian: 101431

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 200ns,

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1N4004E-E3/53
Vishay Semiconductor Diodes Division

1N4004E-E3/53

bahagian bahagian: 193977

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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1N4002E-E3/53
Vishay Semiconductor Diodes Division

1N4002E-E3/53

bahagian bahagian: 143911

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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1N4936-E3/54
Vishay Semiconductor Diodes Division

1N4936-E3/54

bahagian bahagian: 112560

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 200ns,

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1N5391-E3/54
Vishay Semiconductor Diodes Division

1N5391-E3/54

bahagian bahagian: 193597

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

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1N5392-E3/73
Vishay Semiconductor Diodes Division

1N5392-E3/73

bahagian bahagian: 155547

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

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1N5393-E3/54
Vishay Semiconductor Diodes Division

1N5393-E3/54

bahagian bahagian: 194944

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

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1N4003E-E3/54
Vishay Semiconductor Diodes Division

1N4003E-E3/54

bahagian bahagian: 184559

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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1N4005E-E3/73
Vishay Semiconductor Diodes Division

1N4005E-E3/73

bahagian bahagian: 171349

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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1N4933-E3/73
Vishay Semiconductor Diodes Division

1N4933-E3/73

bahagian bahagian: 180622

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 200ns,

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1N5391-E3/73
Vishay Semiconductor Diodes Division

1N5391-E3/73

bahagian bahagian: 195208

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

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1N4006-E3/53
Vishay Semiconductor Diodes Division

1N4006-E3/53

bahagian bahagian: 124354

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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1N4005E-E3/54
Vishay Semiconductor Diodes Division

1N4005E-E3/54

bahagian bahagian: 120866

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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1N4003-E3/53
Vishay Semiconductor Diodes Division

1N4003-E3/53

bahagian bahagian: 185342

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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1N4002E-E3/73
Vishay Semiconductor Diodes Division

1N4002E-E3/73

bahagian bahagian: 198381

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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1N4001E-E3/54
Vishay Semiconductor Diodes Division

1N4001E-E3/54

bahagian bahagian: 164948

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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1N5395-E3/73
Vishay Semiconductor Diodes Division

1N5395-E3/73

bahagian bahagian: 126201

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

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1N1184A
GeneSiC Semiconductor

1N1184A

bahagian bahagian: 11180

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 40A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 40A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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1N5402GHR0G
Taiwan Semiconductor Corporation

1N5402GHR0G

bahagian bahagian: 186

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 3A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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1N5393GHR0G
Taiwan Semiconductor Corporation

1N5393GHR0G

bahagian bahagian: 200

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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1N5406GHR0G
Taiwan Semiconductor Corporation

1N5406GHR0G

bahagian bahagian: 130

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 3A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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1N5391G R0G
Taiwan Semiconductor Corporation

1N5391G R0G

bahagian bahagian: 162

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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1N5391GHR0G
Taiwan Semiconductor Corporation

1N5391GHR0G

bahagian bahagian: 128

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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1N5392G R0G
Taiwan Semiconductor Corporation

1N5392G R0G

bahagian bahagian: 120

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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1N5397GHR0G
Taiwan Semiconductor Corporation

1N5397GHR0G

bahagian bahagian: 186

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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1N5399G R0G
Taiwan Semiconductor Corporation

1N5399G R0G

bahagian bahagian: 122

Jenis Diod: Standard, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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1N5400GHR0G
Taiwan Semiconductor Corporation

1N5400GHR0G

bahagian bahagian: 184

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 3A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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1N5393G R0G
Taiwan Semiconductor Corporation

1N5393G R0G

bahagian bahagian: 140

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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1N5398GHR0G
Taiwan Semiconductor Corporation

1N5398GHR0G

bahagian bahagian: 192

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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1N5392GHR0G
Taiwan Semiconductor Corporation

1N5392GHR0G

bahagian bahagian: 134

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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1N5404GHR0G
Taiwan Semiconductor Corporation

1N5404GHR0G

bahagian bahagian: 192

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 3A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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1N5397G R0G
Taiwan Semiconductor Corporation

1N5397G R0G

bahagian bahagian: 161

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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1N5395G R0G
Taiwan Semiconductor Corporation

1N5395G R0G

bahagian bahagian: 131

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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1N5401GHR0G
Taiwan Semiconductor Corporation

1N5401GHR0G

bahagian bahagian: 202

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 3A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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