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Diod - Pembetulan - Bujang

10TQ035STRR
Vishay Semiconductor Diodes Division

10TQ035STRR

bahagian bahagian: 171

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 35V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 570mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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10TQ035STRL
Vishay Semiconductor Diodes Division

10TQ035STRL

bahagian bahagian: 82

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 35V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 570mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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10ETS12STRL
Vishay Semiconductor Diodes Division

10ETS12STRL

bahagian bahagian: 173

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 10A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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10ETS12STRR
Vishay Semiconductor Diodes Division

10ETS12STRR

bahagian bahagian: 98

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 10A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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10ETS08STRL
Vishay Semiconductor Diodes Division

10ETS08STRL

bahagian bahagian: 157

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 10A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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10ETS08STRR
Vishay Semiconductor Diodes Division

10ETS08STRR

bahagian bahagian: 94

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 10A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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10ETF10STRR
Vishay Semiconductor Diodes Division

10ETF10STRR

bahagian bahagian: 76

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.33V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 310ns,

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10ETF10STRL
Vishay Semiconductor Diodes Division

10ETF10STRL

bahagian bahagian: 99

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.33V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 310ns,

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10ETF10S
Vishay Semiconductor Diodes Division

10ETF10S

bahagian bahagian: 161

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.33V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 310ns,

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10ETF10FP
Vishay Semiconductor Diodes Division

10ETF10FP

bahagian bahagian: 131

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.33V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 310ns,

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10ETF06STRL
Vishay Semiconductor Diodes Division

10ETF06STRL

bahagian bahagian: 5088

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 145ns,

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10ETF06FP
Vishay Semiconductor Diodes Division

10ETF06FP

bahagian bahagian: 145

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 145ns,

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10ETF04FP
Vishay Semiconductor Diodes Division

10ETF04FP

bahagian bahagian: 152

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 145ns,

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10ETF02STRL
Vishay Semiconductor Diodes Division

10ETF02STRL

bahagian bahagian: 153

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 145ns,

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10ETF02FP
Vishay Semiconductor Diodes Division

10ETF02FP

bahagian bahagian: 112

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 145ns,

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18TQ040
Vishay Semiconductor Diodes Division

18TQ040

bahagian bahagian: 160

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 18A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 600mV @ 18A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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10TQ035
Vishay Semiconductor Diodes Division

10TQ035

bahagian bahagian: 71

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 35V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 760mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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10TQ040
Vishay Semiconductor Diodes Division

10TQ040

bahagian bahagian: 130

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 760mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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183NQ100R
Vishay Semiconductor Diodes Division

183NQ100R

bahagian bahagian: 112

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 180A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 950mV @ 180A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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183NQ080
Vishay Semiconductor Diodes Division

183NQ080

bahagian bahagian: 135

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io): 180A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 950mV @ 180A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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182NQ030
Vishay Semiconductor Diodes Division

182NQ030

bahagian bahagian: 74

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 180A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 510mV @ 180A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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181NQ045
Vishay Semiconductor Diodes Division

181NQ045

bahagian bahagian: 104

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io): 180A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 660mV @ 180A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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181NQ045R
Vishay Semiconductor Diodes Division

181NQ045R

bahagian bahagian: 95

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io): 180A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 660mV @ 180A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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181NQ035
Vishay Semiconductor Diodes Division

181NQ035

bahagian bahagian: 137

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 35V, Semasa - Rata-rata Disahkan (Io): 180A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 660mV @ 180A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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180NQ045
Vishay Semiconductor Diodes Division

180NQ045

bahagian bahagian: 156

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io): 180A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 600mV @ 180A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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180NQ045R
Vishay Semiconductor Diodes Division

180NQ045R

bahagian bahagian: 137

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io): 180A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 600mV @ 180A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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180NQ035
Vishay Semiconductor Diodes Division

180NQ035

bahagian bahagian: 5037

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 35V, Semasa - Rata-rata Disahkan (Io): 180A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 600mV @ 180A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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123NQ100R
Vishay Semiconductor Diodes Division

123NQ100R

bahagian bahagian: 91

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 120A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 910mV @ 120A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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123NQ080
Vishay Semiconductor Diodes Division

123NQ080

bahagian bahagian: 5020

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io): 120A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 910mV @ 120A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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122NQ030R
Vishay Semiconductor Diodes Division

122NQ030R

bahagian bahagian: 69

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 120A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 490mV @ 120A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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121NQ045R
Vishay Semiconductor Diodes Division

121NQ045R

bahagian bahagian: 130

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io): 120A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 650mV @ 120A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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121NQ040
Vishay Semiconductor Diodes Division

121NQ040

bahagian bahagian: 5051

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 120A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 650mV @ 120A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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121NQ045
Vishay Semiconductor Diodes Division

121NQ045

bahagian bahagian: 135

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io): 120A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 650mV @ 120A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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121NQ035
Vishay Semiconductor Diodes Division

121NQ035

bahagian bahagian: 74

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 35V, Semasa - Rata-rata Disahkan (Io): 120A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 650mV @ 120A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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120NQ045R
Vishay Semiconductor Diodes Division

120NQ045R

bahagian bahagian: 120

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io): 120A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 570mV @ 120A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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1N6631US
Microsemi Corporation

1N6631US

bahagian bahagian: 4317

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1100V, Semasa - Rata-rata Disahkan (Io): 1.4A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 1.4A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 60ns,

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