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Transistor - Bipolar (BJT) - Bujang

BC857A RFG
Taiwan Semiconductor Corporation

BC857A RFG

bahagian bahagian: 183

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 650mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V,

Bersenang-senang
BC849AW RFG
Taiwan Semiconductor Corporation

BC849AW RFG

bahagian bahagian: 265

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V,

Bersenang-senang
BC548A A1G
Taiwan Semiconductor Corporation

BC548A A1G

bahagian bahagian: 207

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V,

Bersenang-senang
BC857C RFG
Taiwan Semiconductor Corporation

BC857C RFG

bahagian bahagian: 191

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 650mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V,

Bersenang-senang
BC547C A1G
Taiwan Semiconductor Corporation

BC547C A1G

bahagian bahagian: 229

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V,

Bersenang-senang
BC846BW RFG
Taiwan Semiconductor Corporation

BC846BW RFG

bahagian bahagian: 186

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 65V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V,

Bersenang-senang
BC550A B1G
Taiwan Semiconductor Corporation

BC550A B1G

bahagian bahagian: 236

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V,

Bersenang-senang
BC548A B1G
Taiwan Semiconductor Corporation

BC548A B1G

bahagian bahagian: 186

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V,

Bersenang-senang
BC547B A1G
Taiwan Semiconductor Corporation

BC547B A1G

bahagian bahagian: 167

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V,

Bersenang-senang
BC847AW RFG
Taiwan Semiconductor Corporation

BC847AW RFG

bahagian bahagian: 181

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V,

Bersenang-senang
BC549A A1G
Taiwan Semiconductor Corporation

BC549A A1G

bahagian bahagian: 214

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V,

Bersenang-senang
BC338-16 A1G
Taiwan Semiconductor Corporation

BC338-16 A1G

bahagian bahagian: 205

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 25V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V,

Bersenang-senang
BC817-16W RFG
Taiwan Semiconductor Corporation

BC817-16W RFG

bahagian bahagian: 264

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V,

Bersenang-senang
BC546C B1G
Taiwan Semiconductor Corporation

BC546C B1G

bahagian bahagian: 210

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 65V, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V,

Bersenang-senang
BC338-40 A1G
Taiwan Semiconductor Corporation

BC338-40 A1G

bahagian bahagian: 218

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 25V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO),

Bersenang-senang
BC817-16 RFG
Taiwan Semiconductor Corporation

BC817-16 RFG

bahagian bahagian: 171

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V,

Bersenang-senang
BC847C RFG
Taiwan Semiconductor Corporation

BC847C RFG

bahagian bahagian: 230

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V,

Bersenang-senang
BC807-16 RFG
Taiwan Semiconductor Corporation

BC807-16 RFG

bahagian bahagian: 256

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 200nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V,

Bersenang-senang
BC849BW RFG
Taiwan Semiconductor Corporation

BC849BW RFG

bahagian bahagian: 183

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V,

Bersenang-senang
BC817-25W RFG
Taiwan Semiconductor Corporation

BC817-25W RFG

bahagian bahagian: 259

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V,

Bersenang-senang
BC848CW RFG
Taiwan Semiconductor Corporation

BC848CW RFG

bahagian bahagian: 243

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V,

Bersenang-senang
BC337-16 A1G
Taiwan Semiconductor Corporation

BC337-16 A1G

bahagian bahagian: 192

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V,

Bersenang-senang
BC548C B1G
Taiwan Semiconductor Corporation

BC548C B1G

bahagian bahagian: 263

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V,

Bersenang-senang
BC849CW RFG
Taiwan Semiconductor Corporation

BC849CW RFG

bahagian bahagian: 197

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V,

Bersenang-senang
BC817-40 RFG
Taiwan Semiconductor Corporation

BC817-40 RFG

bahagian bahagian: 233

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V,

Bersenang-senang
BC550B B1G
Taiwan Semiconductor Corporation

BC550B B1G

bahagian bahagian: 174

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V,

Bersenang-senang
BC817-25 RFG
Taiwan Semiconductor Corporation

BC817-25 RFG

bahagian bahagian: 254

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V,

Bersenang-senang
BC549B B1G
Taiwan Semiconductor Corporation

BC549B B1G

bahagian bahagian: 215

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V,

Bersenang-senang
BC550C B1G
Taiwan Semiconductor Corporation

BC550C B1G

bahagian bahagian: 256

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V,

Bersenang-senang
BC856B RFG
Taiwan Semiconductor Corporation

BC856B RFG

bahagian bahagian: 263

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 65V, Ketepuan Vce (Maks) @ Ib, Ic: 650mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V,

Bersenang-senang
BC547A A1G
Taiwan Semiconductor Corporation

BC547A A1G

bahagian bahagian: 201

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V,

Bersenang-senang
BC807-16W RFG
Taiwan Semiconductor Corporation

BC807-16W RFG

bahagian bahagian: 206

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V,

Bersenang-senang
BC338-25 A1G
Taiwan Semiconductor Corporation

BC338-25 A1G

bahagian bahagian: 190

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 25V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 5V,

Bersenang-senang
BC807-40 RFG
Taiwan Semiconductor Corporation

BC807-40 RFG

bahagian bahagian: 215

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 200nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V,

Bersenang-senang
BC546B A1G
Taiwan Semiconductor Corporation

BC546B A1G

bahagian bahagian: 229

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 65V, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V,

Bersenang-senang
BC550C A1G
Taiwan Semiconductor Corporation

BC550C A1G

bahagian bahagian: 202

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V,

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