Transistor - FET, MOSFET - Bujang | Produk Semikonduktor Diskrit | 2

EPC2203

bahagian bahagian: 59185

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.7A, Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 1A, 5V,

Senarai harapan

EPC

EPC2014C

bahagian bahagian: 107624

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 16 mOhm @ 10A, 5V,

Senarai harapan

EPC

EPC8002

bahagian bahagian: 49093

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 65V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 530 mOhm @ 500mA, 5V,

Senarai harapan

EPC

EPC2037

bahagian bahagian: 128582

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.7A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 550 mOhm @ 100mA, 5V,

Senarai harapan

EPC

EPC2040

bahagian bahagian: 113264

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 15V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.4A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 1.5A, 5V,

Senarai harapan

EPC

EPC2039

bahagian bahagian: 105727

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 6A, 5V,

Senarai harapan

EPC

EPC2016C

bahagian bahagian: 65843

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 18A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 16 mOhm @ 11A, 5V,

Senarai harapan

EPC

EPC2038

bahagian bahagian: 148654

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 500mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 3.3 Ohm @ 50mA, 5V,

Senarai harapan

EPC

EPC2036

bahagian bahagian: 150786

Jenis FET: N-Channel, Teknologi: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 65 mOhm @ 1A, 5V,

Senarai harapan