Diod - Pembetulan - Bujang

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Diod - Pembetulan - Bujang

GeneSiC Semiconductor

1N8026-GA

bahagian bahagian: 413

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 8A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.6V @ 2.5A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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GeneSiC Semiconductor

1N1183A

bahagian bahagian: 9667

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 40A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 40A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N3209R

bahagian bahagian: 13664

Jenis Diod: Standard, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 15A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N3294AR

bahagian bahagian: 3460

Jenis Diod: Standard, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 100A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N1188A

bahagian bahagian: 9645

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 40A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 40A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N4596R

bahagian bahagian: 3424

Jenis Diod: Standard, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 1400V, Semasa - Rata-rata Disahkan (Io): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 150A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N4590

bahagian bahagian: 3411

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 150A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N5834

bahagian bahagian: 5569

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 40A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 590mV @ 40A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N6097R

bahagian bahagian: 5569

Jenis Diod: Schottky, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 50A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 50A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N3211

bahagian bahagian: 13543

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 300V, Semasa - Rata-rata Disahkan (Io): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 15A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N4592

bahagian bahagian: 3455

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 150A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Senarai harapan

GeneSiC Semiconductor

1N2128AR

bahagian bahagian: 11438

Jenis Diod: Standard, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 60A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 60A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

150KR80A

bahagian bahagian: 3417

Jenis Diod: Standard, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.33V @ 150A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Senarai harapan

GeneSiC Semiconductor

1N5831R

bahagian bahagian: 5568

Jenis Diod: Schottky, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 35V, Semasa - Rata-rata Disahkan (Io): 25A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 580mV @ 25A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

150K80A

bahagian bahagian: 3418

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.33V @ 150A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N3295AR

bahagian bahagian: 3433

Jenis Diod: Standard, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 100A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N3882

bahagian bahagian: 13603

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 300V, Semasa - Rata-rata Disahkan (Io): 6A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 6A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 200ns,

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GeneSiC Semiconductor

1N5829R

bahagian bahagian: 5592

Jenis Diod: Schottky, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 25A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 580mV @ 25A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N5831

bahagian bahagian: 5574

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 35V, Semasa - Rata-rata Disahkan (Io): 25A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 580mV @ 25A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N1206A

bahagian bahagian: 15000

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 12A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 12A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

150K40A

bahagian bahagian: 3458

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.33V @ 150A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

150KR100A

bahagian bahagian: 3439

Jenis Diod: Standard, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.33V @ 150A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N2135AR

bahagian bahagian: 9650

Jenis Diod: Standard, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 60A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 60A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N3293AR

bahagian bahagian: 3442

Jenis Diod: Standard, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 100A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N6096

bahagian bahagian: 5594

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 25A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 580mV @ 25A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N5828R

bahagian bahagian: 5618

Jenis Diod: Schottky, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 500mV @ 15A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N1204AR

bahagian bahagian: 29070

Jenis Diod: Standard, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 12A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 12A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Senarai harapan

GeneSiC Semiconductor

1N3893

bahagian bahagian: 12917

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 12A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 12A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 200ns,

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GeneSiC Semiconductor

1N2137AR

bahagian bahagian: 9629

Jenis Diod: Standard, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 500V, Semasa - Rata-rata Disahkan (Io): 60A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 60A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Senarai harapan

GeneSiC Semiconductor

1N1188

bahagian bahagian: 9467

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 35A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 35A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N1199A

bahagian bahagian: 24991

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 12A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 12A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N1204A

bahagian bahagian: 21792

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 12A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 12A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

1N3214R

bahagian bahagian: 13835

Jenis Diod: Standard, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 15A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Senarai harapan

GeneSiC Semiconductor

1N3890R

bahagian bahagian: 13730

Jenis Diod: Standard, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 12A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 12A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 200ns,

Senarai harapan

GeneSiC Semiconductor

1N4594

bahagian bahagian: 3451

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 150A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Senarai harapan

GeneSiC Semiconductor

1N4596

bahagian bahagian: 3402

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1400V, Semasa - Rata-rata Disahkan (Io): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 150A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Senarai harapan

745

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