Diod - Pembetulan - Bujang | Produk Semikonduktor Diskrit | 21

1N1184AR

bahagian bahagian: 15082

Jenis Diod: Standard, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 40A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 40A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Senarai harapan

GeneSiC Semiconductor

1N3295A

bahagian bahagian: 3423

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 100A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Senarai harapan

GeneSiC Semiconductor

1N1189R

bahagian bahagian: 63

Jenis Diod: Standard, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 35A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 35A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Senarai harapan

GeneSiC Semiconductor

1N6095

bahagian bahagian: 5630

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 25A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 580mV @ 25A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan

GeneSiC Semiconductor

1N4588R

bahagian bahagian: 3431

Jenis Diod: Standard, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 150A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Senarai harapan

GeneSiC Semiconductor

1N3882R

bahagian bahagian: 13616

Jenis Diod: Standard, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 300V, Semasa - Rata-rata Disahkan (Io): 6A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 6A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 200ns,

Senarai harapan

GeneSiC Semiconductor

1N3296AR

bahagian bahagian: 3451

Jenis Diod: Standard, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 100A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Senarai harapan

GeneSiC Semiconductor

1N2129A

bahagian bahagian: 10804

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 60A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 60A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Senarai harapan

GeneSiC Semiconductor

1N6097

bahagian bahagian: 5607

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 50A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 50A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan

GeneSiC Semiconductor

1N3212

bahagian bahagian: 14924

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 15A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Senarai harapan

GeneSiC Semiconductor

1N3765R

bahagian bahagian: 9630

Jenis Diod: Standard, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 700V, Semasa - Rata-rata Disahkan (Io): 35A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 35A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Senarai harapan

GeneSiC Semiconductor

1N1190

bahagian bahagian: 10824

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 35A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 35A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Senarai harapan

GeneSiC Semiconductor

1N3766R

bahagian bahagian: 9633

Jenis Diod: Standard, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 35A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 35A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Senarai harapan

GeneSiC Semiconductor

1N5833R

bahagian bahagian: 5570

Jenis Diod: Schottky, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 40A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 40A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan

GeneSiC Semiconductor

1N1186

bahagian bahagian: 13872

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 35A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 35A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Senarai harapan

GeneSiC Semiconductor

1N4588

bahagian bahagian: 3389

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 150A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Senarai harapan

GeneSiC Semiconductor

1N3671A

bahagian bahagian: 13788

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 12A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 12A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Senarai harapan

GeneSiC Semiconductor

1N3890

bahagian bahagian: 15975

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 12A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 12A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 200ns,

Senarai harapan

GeneSiC Semiconductor

1N5832R

bahagian bahagian: 5637

Jenis Diod: Schottky, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 40A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 520mV @ 40A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan

GeneSiC Semiconductor

150KR20A

bahagian bahagian: 3465

Jenis Diod: Standard, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.33V @ 150A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Senarai harapan

GeneSiC Semiconductor

1N3210R

bahagian bahagian: 14992

Jenis Diod: Standard, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 15A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Senarai harapan

GeneSiC Semiconductor

1N1189

bahagian bahagian: 11471

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 35A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 35A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Senarai harapan

GeneSiC Semiconductor

1N3296A

bahagian bahagian: 3452

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 100A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Senarai harapan

GeneSiC Semiconductor

1N6096R

bahagian bahagian: 5597

Jenis Diod: Schottky, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 25A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 580mV @ 25A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan

GeneSiC Semiconductor

1N5826

bahagian bahagian: 5569

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 440mV @ 15A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan

GeneSiC Semiconductor

1N5826R

bahagian bahagian: 5576

Jenis Diod: Schottky, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 440mV @ 15A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan

GeneSiC Semiconductor

1N1187

bahagian bahagian: 14520

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 300V, Semasa - Rata-rata Disahkan (Io): 35A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 35A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Senarai harapan

GeneSiC Semiconductor

1N5827R

bahagian bahagian: 5573

Jenis Diod: Schottky, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 470mV @ 15A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan

GeneSiC Semiconductor

1N3289AR

bahagian bahagian: 3442

Jenis Diod: Standard, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 100A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Senarai harapan

GeneSiC Semiconductor

1N3208

bahagian bahagian: 10062

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 15A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Senarai harapan

GeneSiC Semiconductor

1N4593R

bahagian bahagian: 3446

Jenis Diod: Standard, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 150A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Senarai harapan

GeneSiC Semiconductor

1N5833

bahagian bahagian: 5595

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 40A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 40A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan

GeneSiC Semiconductor

1N3212R

bahagian bahagian: 13593

Jenis Diod: Standard, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 15A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Senarai harapan

GeneSiC Semiconductor

1N8032-GA

bahagian bahagian: 411

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 2.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 2.5A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

Senarai harapan

GeneSiC Semiconductor

1N3765

bahagian bahagian: 9603

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 700V, Semasa - Rata-rata Disahkan (Io): 35A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 35A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Senarai harapan

GeneSiC Semiconductor

1N2130A

bahagian bahagian: 13757

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 60A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 60A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Senarai harapan