Diod - Pembetulan - Bujang | Produk Semikonduktor Diskrit | 21

MBR8045

bahagian bahagian: 4200

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io): 80A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 650mV @ 80A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRH30020RL

bahagian bahagian: 2354

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 300A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 580mV @ 300A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

FR30GR02

bahagian bahagian: 7100

Jenis Diod: Standard, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 30A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 30A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 200ns,

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GeneSiC Semiconductor

MBRH30040RL

bahagian bahagian: 2289

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 300A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 600mV @ 300A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRH30045L

bahagian bahagian: 2377

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io): 300A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 600mV @ 300A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MUR5010R

bahagian bahagian: 5676

Jenis Diod: Standard, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 50A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 50A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

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GeneSiC Semiconductor

FR85G02

bahagian bahagian: 6031

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 85A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 85A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 200ns,

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GeneSiC Semiconductor

FR40MR05

bahagian bahagian: 7147

Jenis Diod: Standard, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 40A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 40A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 500ns,

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GeneSiC Semiconductor

FR85GR02

bahagian bahagian: 6017

Jenis Diod: Standard, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 85A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 85A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 200ns,

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GeneSiC Semiconductor

MBRH30030L

bahagian bahagian: 2356

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 300A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 580mV @ 300A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MURH7060R

bahagian bahagian: 2350

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 70A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 70A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 110ns,

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GeneSiC Semiconductor

MBRH30045RL

bahagian bahagian: 2334

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io): 300A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 600mV @ 300A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRH30040L

bahagian bahagian: 2296

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 300A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 600mV @ 300A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRH30035L

bahagian bahagian: 2318

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 35V, Semasa - Rata-rata Disahkan (Io): 300A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 600mV @ 300A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRH30035RL

bahagian bahagian: 5231

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 35V, Semasa - Rata-rata Disahkan (Io): 300A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 600mV @ 300A,

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GeneSiC Semiconductor

MBRH20035L

bahagian bahagian: 2307

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 35V, Semasa - Rata-rata Disahkan (Io): 200A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 600mV @ 200A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRH20045RL

bahagian bahagian: 2242

Jenis Diod: Schottky, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io): 200A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 600mV @ 200A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRH15020RL

bahagian bahagian: 2232

Jenis Diod: Schottky, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 580mV @ 150A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

GAP05SLT80-220

bahagian bahagian: 311

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 8000V, Semasa - Rata-rata Disahkan (Io): 50mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 4.6V @ 50mA, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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GeneSiC Semiconductor

MBRH20020RL

bahagian bahagian: 2319

Jenis Diod: Schottky, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 200A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 580mV @ 200mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRH15045RL

bahagian bahagian: 2265

Jenis Diod: Schottky, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 600mV @ 150A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRH15030L

bahagian bahagian: 2239

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 580mV @ 150A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRH20020L

bahagian bahagian: 2328

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 200A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 580mV @ 200mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRH15040L

bahagian bahagian: 2310

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 600mV @ 150A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRH15035L

bahagian bahagian: 2284

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 35V, Semasa - Rata-rata Disahkan (Io): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 600mV @ 150A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRH20030L

bahagian bahagian: 2270

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 200A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 580mV @ 200A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRH20040RL

bahagian bahagian: 2239

Jenis Diod: Schottky, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 200A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 600mV @ 200A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRH20035RL

bahagian bahagian: 5225

Jenis Diod: Schottky, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 35V, Semasa - Rata-rata Disahkan (Io): 200A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 600mV @ 200A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRH15040RL

bahagian bahagian: 2278

Jenis Diod: Schottky, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 600mV @ 150A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRH15035RL

bahagian bahagian: 2301

Jenis Diod: Schottky, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 35V, Semasa - Rata-rata Disahkan (Io): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 600mV @ 150A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRH15020L

bahagian bahagian: 2249

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 580mV @ 150A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRH15030RL

bahagian bahagian: 2239

Jenis Diod: Schottky, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 150A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRH15045L

bahagian bahagian: 2267

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 600mV @ 150A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

FR6A02

bahagian bahagian: 10367

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 6A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 6A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 200ns,

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GeneSiC Semiconductor

GB01SLT12-220

bahagian bahagian: 20747

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 1A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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GeneSiC Semiconductor

GAP3SLT33-214

bahagian bahagian: 5683

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 3300V, Semasa - Rata-rata Disahkan (Io): 300mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.2V @ 300mA, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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