Diod - Pembetulan - Bujang

GKR26/14

bahagian bahagian: 12958

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1400V, Semasa - Rata-rata Disahkan (Io): 25A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.55V @ 60A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

GKR26/16

bahagian bahagian: 12921

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1600V, Semasa - Rata-rata Disahkan (Io): 25A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.55V @ 60A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

GKN26/04

bahagian bahagian: 13144

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 25A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.55V @ 60A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

GKN26/08

bahagian bahagian: 13937

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 25A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.55V @ 60A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

GKN26/16

bahagian bahagian: 12900

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1600V, Semasa - Rata-rata Disahkan (Io): 25A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.55V @ 60A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

GB02SLT06-214

bahagian bahagian: 1697

GKR26/08

bahagian bahagian: 13917

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 25A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.55V @ 60A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

GB05SLT12-220

bahagian bahagian: 15869

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 2A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

GKR26/04

bahagian bahagian: 18368

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 25A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.55V @ 60A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

GKN26/12

bahagian bahagian: 12909

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 25A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.55V @ 60A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

GKR26/12

bahagian bahagian: 12907

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 25A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.55V @ 60A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

GB10SLT12-214

bahagian bahagian: 1651

GB10SLT12-220

bahagian bahagian: 7775

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 10A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

MBRH30030RL

bahagian bahagian: 1344

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 300A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 580mV @ 300A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

GKN26/14

bahagian bahagian: 12907

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1400V, Semasa - Rata-rata Disahkan (Io): 25A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.55V @ 60A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

MBRH30020L

bahagian bahagian: 1318

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 300A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 580mV @ 300A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

MBRH20045L

bahagian bahagian: 1367

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io): 200A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 600mV @ 200A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

GAP3SLT33-220FP

bahagian bahagian: 4393

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 3300V, Semasa - Rata-rata Disahkan (Io): 300mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 300mA, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

MBRH20030RL

bahagian bahagian: 1318

Jenis Diod: Schottky, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 200A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 580mV @ 200A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

GB01SLT12-252

bahagian bahagian: 20729

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 1A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

MBRH20040L

bahagian bahagian: 5076

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 200A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 600mV @ 200A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

GB01SLT12-214

bahagian bahagian: 33295

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 2.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 1A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

GB02SLT12-252

bahagian bahagian: 37881

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 5A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 2A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

GB05SLT12-252

bahagian bahagian: 17108

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 2A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

GB10SLT12-252

bahagian bahagian: 9012

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2V @ 10A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,