Diod - Pembetulan Jambatan | Produk Semikonduktor Diskrit | 1

GHXS010A060S-D1

bahagian bahagian: 2081

Jenis Diod: Single Phase, Teknologi: Silicon Carbide Schottky, Voltan - Terbalik Puncak (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 10A, Semasa - Kebocoran Terbalik @ Vr: 100µA @ 600V,

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Global Power Technologies Group

GHXS045A120S-D1

bahagian bahagian: 537

Jenis Diod: Single Phase, Teknologi: Silicon Carbide Schottky, Voltan - Terbalik Puncak (Maks): 1.2kV, Semasa - Rata-rata Disahkan (Io): 45A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 45A, Semasa - Kebocoran Terbalik @ Vr: 300µA @ 1200V,

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Global Power Technologies Group

GHXS045A120S-D1E

bahagian bahagian: 534

Jenis Diod: Single Phase, Teknologi: Silicon Carbide Schottky, Voltan - Terbalik Puncak (Maks): 1.2kV, Semasa - Rata-rata Disahkan (Io): 45A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 45A, Semasa - Kebocoran Terbalik @ Vr: 300µA @ 1200V,

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Global Power Technologies Group

GHXS015A120S-D1E

bahagian bahagian: 1190

Jenis Diod: Single Phase, Teknologi: Silicon Carbide Schottky, Voltan - Terbalik Puncak (Maks): 1.2kV, Semasa - Rata-rata Disahkan (Io): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 15A, Semasa - Kebocoran Terbalik @ Vr: 100µA @ 1200V,

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Global Power Technologies Group

GHXS015A120S-D1

bahagian bahagian: 1154

Jenis Diod: Single Phase, Teknologi: Silicon Carbide Schottky, Voltan - Terbalik Puncak (Maks): 1.2kV, Semasa - Rata-rata Disahkan (Io): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 15A, Semasa - Kebocoran Terbalik @ Vr: 100µA @ 1200V,

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Global Power Technologies Group

GHXS020A060S-D1

bahagian bahagian: 1478

Jenis Diod: Single Phase, Teknologi: Silicon Carbide Schottky, Voltan - Terbalik Puncak (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 20A, Semasa - Kebocoran Terbalik @ Vr: 200µA @ 600V,

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Global Power Technologies Group

GHXS030A060S-D1

bahagian bahagian: 1214

Jenis Diod: Single Phase, Teknologi: Silicon Carbide Schottky, Voltan - Terbalik Puncak (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 30A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 30A, Semasa - Kebocoran Terbalik @ Vr: 100µA @ 600V,

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Global Power Technologies Group

GHXS030A120S-D1

bahagian bahagian: 658

Jenis Diod: Single Phase, Teknologi: Silicon Carbide Schottky, Voltan - Terbalik Puncak (Maks): 1.2kV, Semasa - Rata-rata Disahkan (Io): 30A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 30A, Semasa - Kebocoran Terbalik @ Vr: 200µA @ 1200V,

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Global Power Technologies Group

GHXS030A120S-D1E

bahagian bahagian: 720

Jenis Diod: Single Phase, Teknologi: Silicon Carbide Schottky, Voltan - Terbalik Puncak (Maks): 1.2kV, Semasa - Rata-rata Disahkan (Io): 30A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 30A, Semasa - Kebocoran Terbalik @ Vr: 200µA @ 1200V,

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Global Power Technologies Group

GHXS020A060S-D1E

bahagian bahagian: 1471

Jenis Diod: Single Phase, Teknologi: Silicon Carbide Schottky, Voltan - Terbalik Puncak (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 20A, Semasa - Kebocoran Terbalik @ Vr: 200µA @ 600V,

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Global Power Technologies Group

GHXS010A060S-D1E

bahagian bahagian: 2062

Jenis Diod: Single Phase, Teknologi: Silicon Carbide Schottky, Voltan - Terbalik Puncak (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 10A, Semasa - Kebocoran Terbalik @ Vr: 100µA @ 600V,

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Global Power Technologies Group

GHXS030A060S-D1E

bahagian bahagian: 1161

Jenis Diod: Single Phase, Teknologi: Silicon Carbide Schottky, Voltan - Terbalik Puncak (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 30A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 30A, Semasa - Kebocoran Terbalik @ Vr: 100µA @ 600V,

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