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Dioda - Penyearah - Susunan

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  • Dioda - Penyearah - Susunan
GSXD030A006S1-D3
Global Power Technologies Group

GSXD030A006S1-D3

bahagian bahagian: 5311

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 30A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 30A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GHXS050A060S-D4
Global Power Technologies Group

GHXS050A060S-D4

bahagian bahagian: 1422

Konfigurasi Diod: 2 Independent, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 50A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 50A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GHXS060A120S-D4
Global Power Technologies Group

GHXS060A120S-D4

bahagian bahagian: 657

Konfigurasi Diod: 2 Independent, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 60A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GSXF030A120S1-D3
Global Power Technologies Group

GSXF030A120S1-D3

bahagian bahagian: 5408

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 30A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.35V @ 30A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GSXF060A020S1-D3
Global Power Technologies Group

GSXF060A020S1-D3

bahagian bahagian: 3794

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 60A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GHXS020A060S-D4
Global Power Technologies Group

GHXS020A060S-D4

bahagian bahagian: 1996

Konfigurasi Diod: 2 Independent, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GP2D020A060U
Global Power Technologies Group

GP2D020A060U

bahagian bahagian: 12784

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 30A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.65V @ 10A, Kepantasan: No Recovery Time > 500mA (Io),

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GSXD120A012S1-D3
Global Power Technologies Group

GSXD120A012S1-D3

bahagian bahagian: 4555

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 120V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 120A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 120A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GHXS030A120S-D4
Global Power Technologies Group

GHXS030A120S-D4

bahagian bahagian: 1197

Konfigurasi Diod: 2 Independent, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 30A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 30A, Kepantasan: No Recovery Time > 500mA (Io),

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GHXS015A120S-D3
Global Power Technologies Group

GHXS015A120S-D3

bahagian bahagian: 1918

Konfigurasi Diod: 2 Independent, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 15A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GHXS030A060S-D3
Global Power Technologies Group

GHXS030A060S-D3

bahagian bahagian: 1932

Konfigurasi Diod: 2 Independent, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 30A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GHXS045A120S-D3
Global Power Technologies Group

GHXS045A120S-D3

bahagian bahagian: 907

Konfigurasi Diod: 2 Independent, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 45A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 45A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GSXF060A060S1-D3
Global Power Technologies Group

GSXF060A060S1-D3

bahagian bahagian: 5768

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 60A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GHXS010A060S-D3
Global Power Technologies Group

GHXS010A060S-D3

bahagian bahagian: 3747

Konfigurasi Diod: 2 Independent, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GSXF030A040S1-D3
Global Power Technologies Group

GSXF030A040S1-D3

bahagian bahagian: 6069

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 30A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 30A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GP2D024A060U
Global Power Technologies Group

GP2D024A060U

bahagian bahagian: 21283

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 36A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.65V @ 12A, Kepantasan: No Recovery Time > 500mA (Io),

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GHXS045A120S-D4
Global Power Technologies Group

GHXS045A120S-D4

bahagian bahagian: 845

Konfigurasi Diod: 2 Independent, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 45A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 45A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GSXF030A060S1-D3
Global Power Technologies Group

GSXF030A060S1-D3

bahagian bahagian: 5945

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 30A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 30A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GHXS010A060S-D4
Global Power Technologies Group

GHXS010A060S-D4

bahagian bahagian: 3727

Konfigurasi Diod: 2 Independent, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GP2D016A120U
Global Power Technologies Group

GP2D016A120U

bahagian bahagian: 17930

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 24A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 8A, Kepantasan: No Recovery Time > 500mA (Io),

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GSXF120A060S1-D3
Global Power Technologies Group

GSXF120A060S1-D3

bahagian bahagian: 3644

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 120A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 120A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GHXS030A060S-D4
Global Power Technologies Group

GHXS030A060S-D4

bahagian bahagian: 1867

Konfigurasi Diod: 2 Independent, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 30A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 30A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GSXD030A008S1-D3
Global Power Technologies Group

GSXD030A008S1-D3

bahagian bahagian: 5284

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 30A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 840mV @ 30A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GHXS060A120S-D3
Global Power Technologies Group

GHXS060A120S-D3

bahagian bahagian: 732

Konfigurasi Diod: 2 Independent, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 60A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 60A, Kepantasan: No Recovery Time > 500mA (Io),

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GHXS050A060S-D3
Global Power Technologies Group

GHXS050A060S-D3

bahagian bahagian: 1404

Konfigurasi Diod: 2 Independent, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 50A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 50A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GSXD030A004S1-D3
Global Power Technologies Group

GSXD030A004S1-D3

bahagian bahagian: 5375

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 30A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 30A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GSXD120A015S1-D3
Global Power Technologies Group

GSXD120A015S1-D3

bahagian bahagian: 3628

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 120A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 120A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GSXF100A020S1-D3
Global Power Technologies Group

GSXF100A020S1-D3

bahagian bahagian: 3464

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 120A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GSXF100A120S1-D3
Global Power Technologies Group

GSXF100A120S1-D3

bahagian bahagian: 3311

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.35V @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GSXD120A008S1-D3
Global Power Technologies Group

GSXD120A008S1-D3

bahagian bahagian: 3421

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 120A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 840mV @ 120A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GSXF060A040S1-D3
Global Power Technologies Group

GSXF060A040S1-D3

bahagian bahagian: 4597

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 60A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GSXD100A006S1-D3
Global Power Technologies Group

GSXD100A006S1-D3

bahagian bahagian: 3452

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GSXD120A010S1-D3
Global Power Technologies Group

GSXD120A010S1-D3

bahagian bahagian: 3711

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 120A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 840mV @ 120A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GSXD050A008S1-D3
Global Power Technologies Group

GSXD050A008S1-D3

bahagian bahagian: 4339

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 50A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 840mV @ 50A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GSXF060A100S1-D3
Global Power Technologies Group

GSXF060A100S1-D3

bahagian bahagian: 4206

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 60A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.35V @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GSXD080A008S1-D3
Global Power Technologies Group

GSXD080A008S1-D3

bahagian bahagian: 3852

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 80A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 840mV @ 80A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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